WMQ30DP03TS MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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WMQ30DP03TS 30V Dual P-Channel Enhancement Mode Power MOSFET Description D2 D1 D2 D1 D1 D2 WMQ30DP03TS uses advanced power trench technology that D1 D2 has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S1 G2 G1 S2 S2 G1 Features G2 S1 V = -30V, I = -30A DS D PDFN3030-8L R

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WMQ30DN04TS 40V Dual N-Channel Enhancement Mode Power MOSFET D2 D1 Description D2 D1 D1 D2 D1 D2 WMQ30DN04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S1 G2 G1 S2 S2 G1 G2 maintain superior switching performance. S1 PDFN3030-8L Features V = 40V, I = 28A DS D R

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WMQ30N03T2 30V N-Channel Enhancement Mode Power MOSFET Description D D D WMQ30N03T2 uses advanced power trench technology that has D D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = 30V, I = 30A DS D R

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WMQ30N02T1 20V N-Channel Enhancement Mode Power MOSFET Description D D D WMQ30N02T1 uses advanced power trench technology that has D D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = 20V, I =75A DS D R

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WMQ30N06TS 60V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ30N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S G S S S S maintain superior switching performance. G S PDFN3030-8L Features V = 60V, I = 30A DS D R

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WMQ30N04TS 40V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ30N04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S G S S S S G maintain superior switching performance. S PDFN3030-8L Features V = 40V, I = 30A DS D R

9.5. Size:636K way-on
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WMQ30P04T1 40V P-Channel Enhancement Mode Power MOSFET Description D D D D WMQ30P04T1 uses advanced power trench technology that has D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = - 40V, I = - 30A DS D R

9.6. Size:611K way-on
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WMQ30P03T1 30V P-Channel Enhancement Mode Power MOSFET Description D D D D WMQ30P03T1 uses advanced power trench technology that has D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = -30V, I = -30A DS D R

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