WMQ30DP03TS Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: WMQ30DP03TS
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 29 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 182 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
Тип корпуса: PDFN3030-8L
Аналог (замена) для WMQ30DP03TS
WMQ30DP03TS Datasheet (PDF)
wmq30dp03ts.pdf

WMQ30DP03TS 30V Dual P-Channel Enhancement Mode Power MOSFET DescriptionD2D1D2D1D1D2WMQ30DP03TS uses advanced power trench technology that D1D2has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S1G2G1S2S2G1Features G2S1 V = -30V, I = -30A DS DPDFN3030-8LR
wmq30dn04ts.pdf

WMQ30DN04TS 40V Dual N-Channel Enhancement Mode Power MOSFET D2D1Description D2D1D1D2D1D2WMQ30DN04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S1G2G1S2S2G1G2maintain superior switching performance. S1PDFN3030-8LFeatures V = 40V, I = 28A DS D R
wmq30n03t2.pdf

WMQ30N03T2 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMQ30N03T2 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 30V, I = 30A DS DR
wmq30n02t1.pdf

WMQ30N02T1 20V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMQ30N02T1 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 20V, I =75A DS DR
Другие MOSFET... WMQ20DN06TS , WMQ20N06TS , WMQ25P03T1 , WMQ25P04T1 , WMQ25P06TS , WMQ26P02TS , WMQ28N03T1 , WMQ30DN04TS , 5N65 , WMQ30N02T1 , WMQ30N03T2 , WMQ30N04TS , WMQ30N06TS , WMQ30P03T1 , WMQ30P04T1 , WMQ35P02TS , WMQ37N03T1 .
History: NCE30H11G | IRF7342QTR | IRFB52N15DPBF | STI33N65M2 | STB36NF06LT4 | IPI26CN10N | KMB7D0NP30QA
History: NCE30H11G | IRF7342QTR | IRFB52N15DPBF | STI33N65M2 | STB36NF06LT4 | IPI26CN10N | KMB7D0NP30QA



Список транзисторов
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