WMQ30N06TS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WMQ30N06TS
   Código: Q30N06S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 14.5 nC
   trⓘ - Tiempo de subida: 32.8 nS
   Cossⓘ - Capacitancia de salida: 88 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: PDFN3030-8L

Búsqueda de reemplazo de MOSFET WMQ30N06TS

WMQ30N06TS Datasheet (PDF)

..1. Size:479K way-on
wmq30n06ts.pdf

WMQ30N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ30N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet SGSSSSmaintain superior switching performance. GSPDFN3030-8LFeatures V = 60V, I = 30A DS D R

7.1. Size:640K way-on
wmq30n03t2.pdf

WMQ30N03T2 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMQ30N03T2 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 30V, I = 30A DS DR

7.2. Size:594K way-on
wmq30n02t1.pdf

WMQ30N02T1 20V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMQ30N02T1 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 20V, I =75A DS DR

7.3. Size:658K way-on
wmq30n04ts.pdf

WMQ30N04TS 40V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ30N04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet SGSSSSGmaintain superior switching performance. SPDFN3030-8LFeatures V = 40V, I = 30A DS D R

Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

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