WMQ30P03T1 Todos los transistores

 

WMQ30P03T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMQ30P03T1
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 29.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 177 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: PDFN3030-8L
     - Selección de transistores por parámetros

 

WMQ30P03T1 Datasheet (PDF)

 ..1. Size:611K  way-on
 wmq30p03t1.pdf pdf_icon

WMQ30P03T1

WMQ30P03T1 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ30P03T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = -30V, I = -30A DS DR

 7.1. Size:636K  way-on
 wmq30p04t1.pdf pdf_icon

WMQ30P03T1

WMQ30P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ30P04T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = - 40V, I = - 30A DS DR

 9.1. Size:640K  way-on
 wmq30n03t2.pdf pdf_icon

WMQ30P03T1

WMQ30N03T2 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMQ30N03T2 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 30V, I = 30A DS DR

 9.2. Size:674K  way-on
 wmq30dp03ts.pdf pdf_icon

WMQ30P03T1

WMQ30DP03TS 30V Dual P-Channel Enhancement Mode Power MOSFET DescriptionD2D1D2D1D1D2WMQ30DP03TS uses advanced power trench technology that D1D2has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S1G2G1S2S2G1Features G2S1 V = -30V, I = -30A DS DPDFN3030-8LR

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: OM3N100SA | S68N08ZRN | WPM4801 | FQD18N20V2 | UT20N03 | KRF7343 | FDMS3660AS

 

 
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