WMQ30P03T1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WMQ30P03T1
Маркировка: Q30P03
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 29.7 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 30 nC
trⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 177 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
Тип корпуса: PDFN3030-8L
Аналог (замена) для WMQ30P03T1
WMQ30P03T1 Datasheet (PDF)
wmq30p03t1.pdf
WMQ30P03T1 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ30P03T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = -30V, I = -30A DS DR
wmq30p04t1.pdf
WMQ30P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ30P04T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = - 40V, I = - 30A DS DR
wmq30n03t2.pdf
WMQ30N03T2 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMQ30N03T2 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 30V, I = 30A DS DR
wmq30dp03ts.pdf
WMQ30DP03TS 30V Dual P-Channel Enhancement Mode Power MOSFET DescriptionD2D1D2D1D1D2WMQ30DP03TS uses advanced power trench technology that D1D2has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S1G2G1S2S2G1Features G2S1 V = -30V, I = -30A DS DPDFN3030-8LR
wmq30n02t1.pdf
WMQ30N02T1 20V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMQ30N02T1 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 20V, I =75A DS DR
wmq30n06ts.pdf
WMQ30N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ30N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet SGSSSSmaintain superior switching performance. GSPDFN3030-8LFeatures V = 60V, I = 30A DS D R
wmq30n04ts.pdf
WMQ30N04TS 40V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ30N04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet SGSSSSGmaintain superior switching performance. SPDFN3030-8LFeatures V = 40V, I = 30A DS D R
wmq30dn04ts.pdf
WMQ30DN04TS 40V Dual N-Channel Enhancement Mode Power MOSFET D2D1Description D2D1D1D2D1D2WMQ30DN04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S1G2G1S2S2G1G2maintain superior switching performance. S1PDFN3030-8LFeatures V = 40V, I = 28A DS D R
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100