Справочник MOSFET. WMQ30P03T1

 

WMQ30P03T1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WMQ30P03T1
   Маркировка: Q30P03
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 29.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 30 nC
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 177 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
   Тип корпуса: PDFN3030-8L

 Аналог (замена) для WMQ30P03T1

 

 

WMQ30P03T1 Datasheet (PDF)

 ..1. Size:611K  way-on
 wmq30p03t1.pdf

WMQ30P03T1 WMQ30P03T1

WMQ30P03T1 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ30P03T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = -30V, I = -30A DS DR

 7.1. Size:636K  way-on
 wmq30p04t1.pdf

WMQ30P03T1 WMQ30P03T1

WMQ30P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ30P04T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = - 40V, I = - 30A DS DR

 9.1. Size:640K  way-on
 wmq30n03t2.pdf

WMQ30P03T1 WMQ30P03T1

WMQ30N03T2 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMQ30N03T2 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 30V, I = 30A DS DR

 9.2. Size:674K  way-on
 wmq30dp03ts.pdf

WMQ30P03T1 WMQ30P03T1

WMQ30DP03TS 30V Dual P-Channel Enhancement Mode Power MOSFET DescriptionD2D1D2D1D1D2WMQ30DP03TS uses advanced power trench technology that D1D2has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S1G2G1S2S2G1Features G2S1 V = -30V, I = -30A DS DPDFN3030-8LR

 9.3. Size:594K  way-on
 wmq30n02t1.pdf

WMQ30P03T1 WMQ30P03T1

WMQ30N02T1 20V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMQ30N02T1 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 20V, I =75A DS DR

 9.4. Size:479K  way-on
 wmq30n06ts.pdf

WMQ30P03T1 WMQ30P03T1

WMQ30N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ30N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet SGSSSSmaintain superior switching performance. GSPDFN3030-8LFeatures V = 60V, I = 30A DS D R

 9.5. Size:658K  way-on
 wmq30n04ts.pdf

WMQ30P03T1 WMQ30P03T1

WMQ30N04TS 40V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ30N04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet SGSSSSGmaintain superior switching performance. SPDFN3030-8LFeatures V = 40V, I = 30A DS D R

 9.6. Size:701K  way-on
 wmq30dn04ts.pdf

WMQ30P03T1 WMQ30P03T1

WMQ30DN04TS 40V Dual N-Channel Enhancement Mode Power MOSFET D2D1Description D2D1D1D2D1D2WMQ30DN04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S1G2G1S2S2G1G2maintain superior switching performance. S1PDFN3030-8LFeatures V = 40V, I = 28A DS D R

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