Справочник MOSFET. WMQ30P04T1

 

WMQ30P04T1 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMQ30P04T1
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 21 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 31 ns
   Cossⓘ - Выходная емкость: 310 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
   Тип корпуса: PDFN3030-8L
 

 Аналог (замена) для WMQ30P04T1

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMQ30P04T1 Datasheet (PDF)

 ..1. Size:636K  way-on
 wmq30p04t1.pdf pdf_icon

WMQ30P04T1

WMQ30P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ30P04T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = - 40V, I = - 30A DS DR

 7.1. Size:611K  way-on
 wmq30p03t1.pdf pdf_icon

WMQ30P04T1

WMQ30P03T1 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ30P03T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = -30V, I = -30A DS DR

 9.1. Size:640K  way-on
 wmq30n03t2.pdf pdf_icon

WMQ30P04T1

WMQ30N03T2 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMQ30N03T2 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 30V, I = 30A DS DR

 9.2. Size:674K  way-on
 wmq30dp03ts.pdf pdf_icon

WMQ30P04T1

WMQ30DP03TS 30V Dual P-Channel Enhancement Mode Power MOSFET DescriptionD2D1D2D1D1D2WMQ30DP03TS uses advanced power trench technology that D1D2has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S1G2G1S2S2G1Features G2S1 V = -30V, I = -30A DS DPDFN3030-8LR

ПОКАЗАТЬ ЕЩЁ

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History: SWD069R10VS | RF1S9540 | WMM07N60C4 | IRL8114 | STB7NK80ZT4 | 1H10 | SSF6025

 

 
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