WMQ30P04T1 PDF and Equivalents Search

 

WMQ30P04T1 Specs and Replacement


   Type Designator: WMQ30P04T1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 21 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: PDFN3030-8L
 

 WMQ30P04T1 substitution

   - MOSFET ⓘ Cross-Reference Search

 

WMQ30P04T1 datasheet

 ..1. Size:636K  way-on
 wmq30p04t1.pdf pdf_icon

WMQ30P04T1

WMQ30P04T1 40V P-Channel Enhancement Mode Power MOSFET Description D D D D WMQ30P04T1 uses advanced power trench technology that has D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = - 40V, I = - 30A DS D R ... See More ⇒

 7.1. Size:611K  way-on
 wmq30p03t1.pdf pdf_icon

WMQ30P04T1

WMQ30P03T1 30V P-Channel Enhancement Mode Power MOSFET Description D D D D WMQ30P03T1 uses advanced power trench technology that has D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = -30V, I = -30A DS D R ... See More ⇒

 9.1. Size:640K  way-on
 wmq30n03t2.pdf pdf_icon

WMQ30P04T1

WMQ30N03T2 30V N-Channel Enhancement Mode Power MOSFET Description D D D WMQ30N03T2 uses advanced power trench technology that has D D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = 30V, I = 30A DS D R ... See More ⇒

 9.2. Size:674K  way-on
 wmq30dp03ts.pdf pdf_icon

WMQ30P04T1

WMQ30DP03TS 30V Dual P-Channel Enhancement Mode Power MOSFET Description D2 D1 D2 D1 D1 D2 WMQ30DP03TS uses advanced power trench technology that D1 D2 has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S1 G2 G1 S2 S2 G1 Features G2 S1 V = -30V, I = -30A DS D PDFN3030-8L R ... See More ⇒

SHOW MORE

Detailed specifications: WMQ28N03T1 , WMQ30DN04TS , WMQ30DP03TS , WMQ30N02T1 , WMQ30N03T2 , WMQ30N04TS , WMQ30N06TS , WMQ30P03T1 , 18N50 , WMQ35P02TS , WMQ37N03T1 , WMQ40DN03T1 , WMQ40N03T1 , WMQ42P03T1 , WMQ46N03T1 , WMQ50N04T1 , WMQ50P03T1 .

History: 2SK3214

Keywords - WMQ30P04T1 MOSFET specs

 WMQ30P04T1 cross reference
 WMQ30P04T1 equivalent finder
 WMQ30P04T1 pdf lookup
 WMQ30P04T1 substitution
 WMQ30P04T1 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
Back to Top

 


 
.