Справочник MOSFET. WMQ30N02T1

 

WMQ30N02T1 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMQ30N02T1
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 37.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 3.9 ns
   Cossⓘ - Выходная емкость: 510 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
   Тип корпуса: PDFN3030-8L
 

 Аналог (замена) для WMQ30N02T1

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMQ30N02T1 Datasheet (PDF)

 ..1. Size:594K  way-on
 wmq30n02t1.pdf pdf_icon

WMQ30N02T1

WMQ30N02T1 20V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMQ30N02T1 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 20V, I =75A DS DR

 7.1. Size:640K  way-on
 wmq30n03t2.pdf pdf_icon

WMQ30N02T1

WMQ30N03T2 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMQ30N03T2 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 30V, I = 30A DS DR

 7.2. Size:479K  way-on
 wmq30n06ts.pdf pdf_icon

WMQ30N02T1

WMQ30N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ30N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet SGSSSSmaintain superior switching performance. GSPDFN3030-8LFeatures V = 60V, I = 30A DS D R

 7.3. Size:658K  way-on
 wmq30n04ts.pdf pdf_icon

WMQ30N02T1

WMQ30N04TS 40V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ30N04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet SGSSSSGmaintain superior switching performance. SPDFN3030-8LFeatures V = 40V, I = 30A DS D R

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMQ20N06TS , WMQ25P03T1 , WMQ25P04T1 , WMQ25P06TS , WMQ26P02TS , WMQ28N03T1 , WMQ30DN04TS , WMQ30DP03TS , STP80NF70 , WMQ30N03T2 , WMQ30N04TS , WMQ30N06TS , WMQ30P03T1 , WMQ30P04T1 , WMQ35P02TS , WMQ37N03T1 , WMQ40DN03T1 .

History: FDC6020C | HSK4N10 | SSM9918GJ | WST6402 | SIHG47N60AEF | SUN0765F | NCEP080N10A

 

 
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