All MOSFET. WMQ30N02T1 Datasheet

 

WMQ30N02T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMQ30N02T1
   Marking Code: Q30N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 37.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 43.8 nC
   trⓘ - Rise Time: 3.9 nS
   Cossⓘ - Output Capacitance: 510 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: PDFN3030-8L

 WMQ30N02T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMQ30N02T1 Datasheet (PDF)

 ..1. Size:594K  way-on
 wmq30n02t1.pdf

WMQ30N02T1 WMQ30N02T1

WMQ30N02T1 20V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMQ30N02T1 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 20V, I =75A DS DR

 7.1. Size:640K  way-on
 wmq30n03t2.pdf

WMQ30N02T1 WMQ30N02T1

WMQ30N03T2 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMQ30N03T2 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 30V, I = 30A DS DR

 7.2. Size:479K  way-on
 wmq30n06ts.pdf

WMQ30N02T1 WMQ30N02T1

WMQ30N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ30N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet SGSSSSmaintain superior switching performance. GSPDFN3030-8LFeatures V = 60V, I = 30A DS D R

 7.3. Size:658K  way-on
 wmq30n04ts.pdf

WMQ30N02T1 WMQ30N02T1

WMQ30N04TS 40V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ30N04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet SGSSSSGmaintain superior switching performance. SPDFN3030-8LFeatures V = 40V, I = 30A DS D R

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: RFD16N05L | SWF6N65K

 

 
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