Справочник MOSFET. 7N60

 

7N60 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 7N60
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 142 W
   Предельно допустимое напряжение сток-исток |Uds|: 600 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Максимально допустимый постоянный ток стока |Id|: 7.4 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 180 ns
   Выходная емкость (Cd): 125 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.83 Ohm
   Тип корпуса: TO-220 TO-220F TO-220F1 TO-220F2 TO-262 TO-263

 Аналог (замена) для 7N60

 

 

7N60 Datasheet (PDF)

 ..1. Size:335K  utc
7n60.pdf

7N60
7N60

UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicatio

 ..2. Size:2269K  goford
7n60 7n60f.pdf

7N60
7N60

7N60/7N60FGOFORD600V N-Channel MOSFETGENERAL DESCRIPTIONVDSS RDS(ON) IDThis Power MOSFET is produced usingadvanced planar stripe DMOS technology.600V 1.3 7AThis latest technology has been especiallydesigned to minimize on-state resistance,Have a high rugged avalanchecharacteristics.These devices are well suitedfor high efficiency switched mode powersupplies, active p

 ..3. Size:934K  cn vbsemi
7n60.pdf

7N60
7N60

7N60www.VBsemi.twN-Channel 650V (D-S) Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.8643 Reduced switching and conduction lossesQg max. (nC) Ultra low gate charge (Qg)5Qgs (nC) Avalanche energy rated (UIS)22Qgd (nC)Configuration S

 ..4. Size:230K  inchange semiconductor
7n60.pdf

7N60
7N60

INCHANGE Semiconductorisc N-Channel Mosfet Transistor 7N60FEATURESDrain Current I = 7.4A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)Avalanche Energy SpecifiedFast SwitchingSimple Drive RequirementsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDES

 0.2. Size:166K  1
hgtd7n60c3s hgtp7n60c3.pdf

7N60
7N60

HGTD7N60C3S, HGTP7N60C3Data Sheet December 200114A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTD7N60C3S and HGTP7N60C3 are MOS gated 14A, 600V at TC = 25oChigh voltage switching devices combining the best features 600V Switching SOA Capabilityof MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ =

 0.3. Size:210K  1
ssf7n60a.pdf

7N60
7N60

 0.4. Size:219K  1
ssi7n60a ssw7n60a.pdf

7N60
7N60

 0.5. Size:306K  1
hgtp7n60c3d hgt1s7n60c3ds.pdf

7N60
7N60

HGTP7N60C3D, HGT1S7N60C3DSData Sheet December 200114A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diodes 14A, 600V at TC = 25oCThe HGTP7N60C3D and HGT1S7N60C3DS are MOS gated 600V Switching SOA Capabilityhigh voltage switching devices combining the best features Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oCof MOSFETs

 0.7. Size:660K  1
ssf7n60b.pdf

7N60
7N60

November 2001SSF7N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.4A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to Fast s

 0.9. Size:227K  1
ssf17n60a.pdf

7N60
7N60

 0.10. Size:661K  1
ssw7n60b ssi7n60b.pdf

7N60
7N60

November 2001SSW7N60B / SSI7N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.0A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to

 0.12. Size:85K  1
hgtg27n60c3dr.pdf

7N60
7N60

HGTG27N60C3DRTMData Sheet June 2000 File Number 4262.154A, 600V, Rugged UFS Series N-Channel FeaturesIGBT with Anti-Parallel Ultrafast Diode 54A, 600V, TC = 25oC[ /TitleThis IGBT was designed for optimum performance in the 600V Switching SOA Capability(HGTdemanding world of motor control operation as well as other Typical Fall Time at TJ = 150oC . . . . . . . . .

 0.14. Size:190K  1
hgtg27n60c3r.pdf

7N60
7N60

 0.15. Size:122K  motorola
mgp7n60erev0.pdf

7N60
7N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP7N60E/DDesigner's Data SheetMGP7N60EInsulated Gate Bipolar TransistorN Channel Enhancement Mode Silicon GateThis Insulate

 0.16. Size:122K  motorola
mgp7n60e.pdf

7N60
7N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP7N60E/DDesigner's Data SheetMGP7N60EInsulated Gate Bipolar TransistorN Channel Enhancement Mode Silicon GateThis Insulate

 0.17. Size:148K  motorola
mgp7n60ed.pdf

7N60
7N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP7N60ED/DDesigner's Data SheetMGP7N60EDInsulated Gate Bipolar Transistorwith Anti-Parallel DiodeN Channel Enhancement Mode

 0.18. Size:91K  international rectifier
irfp27n60k.pdf

7N60
7N60

PD - 94407SMPS MOSFETIRFP27N60KHEXFET Power MOSFETApplications Hard Switching Primary or PFC SwitchVDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply600V 180m 27A High Speed Power Switching Motor DriveBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Char

 0.19. Size:615K  international rectifier
irfp27n60kpbf.pdf

7N60
7N60

PD - 95479ASMPS MOSFETIRFP27N60KPbFHEXFET Power MOSFETApplicationsl Hard Switching Primary or PFC SwitchVDSS RDS(on) typ. IDl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply600V 180m 27Al High Speed Power Switchingl Motor Drivel Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt

 0.20. Size:486K  international rectifier
irfb17n60k.pdf

7N60
7N60

PD - 95629IRFB17N60KPbF Lead-Free8/4/04Document Number: 91099 www.vishay.com1IRFB17N60KPbFDocument Number: 91099 www.vishay.com2IRFB17N60KPbFDocument Number: 91099 www.vishay.com3IRFB17N60KPbFDocument Number: 91099 www.vishay.com4IRFB17N60KPbFDocument Number: 91099 www.vishay.com5IRFB17N60KPbFDocument Number: 91099 www.vishay.com6IRFB17N60KPbF

 0.21. Size:55K  philips
phw7n60 1.pdf

7N60
7N60

Philips Semiconductors Product specification PowerMOS transistor PHW7N60 GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 600 Vavalanche energy capability, stable ID Drain current (DC) 7 Aoff-state characteristics, fast Ptot Total power dissipation

 0.22. Size:51K  philips
phw7n60.pdf

7N60
7N60

PHW7N60Philips Semiconductors Product specification PowerMOS transistor PHW7N60 GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 600 Vavalanche energy capability, stable ID Drain current (DC) 7 Aoff-state characteristics, fast Ptot

 0.23. Size:75K  philips
phx7n60e.pdf

7N60
7N60

Philips Semiconductors Product specification PowerMOS transistors PHX7N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 3.6 Ag Isolated packageRDS(ON) 1.2 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enh

 0.24. Size:91K  philips
php7n60e phb7n60e phw7n60e.pdf

7N60
7N60

Philips Semiconductors Product specification PowerMOS transistors PHP7N60E, PHB7N60E, PHW7N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 7 Ag Low thermal resistanceRDS(ON) 1.2 sGENERAL DESCRIPTIONN-chan

 0.25. Size:910K  st
stb37n60dm2ag.pdf

7N60
7N60

STB37N60DM2AG Automotive-grade N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT TABSTB37N60DM2AG 600 V 0.110 28 A 210 W Designed for automotive applications and 3 AEC-Q101 qualified 1 Fast-recovery body diode Extremely low gate charge and input capa

 0.26. Size:859K  st
stf7n60m2.pdf

7N60
7N60

STF7N60M2N-channel 600 V, 0.86 typ., 5 A MDmesh II Plus low Qg Power MOSFET in TO-220FP packageDatasheet - production dataFeaturesVDS @ RDS(on) Order code IDTJmax maxSTF7N60M2 650 V 0.95 5 A Extremely low gate charge32 Lower RDS(on) x area vs previous generation1 Low gate input resistanceTO-220FP 100% avalanche tested Zener-protectedApp

 0.27. Size:699K  st
stw37n60dm2ag.pdf

7N60
7N60

STW37N60DM2AG Automotive-grade N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW37N60DM2AG 600 V 0.110 28 A 210 W Designed for automotive applications and AEC-Q101 qualified 3 Fast-recovery body diode 2 Extremely low gate charge and input 1capac

 0.28. Size:298K  st
stl7n60m2.pdf

7N60
7N60

STL7N60M2 N-channel 600 V, 0.92 typ., 5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x5 package Datasheet - production data Features Order code V @ Tjmax R max I DS DS(on) DSTL7N60M2 650 V 1.05 5 A 675 Extremely low gate charge 4 Excellent output capacitance (COSS) profile 100% avalanche tested 112 Zener-protected PowerFLAT 5x5 Applic

 0.29. Size:1199K  st
std7n60m2 stp7n60m2 stu7n60m2.pdf

7N60
7N60

STD7N60M2, STP7N60M2, STU7N60M2N-channel 600 V, 0.86 typ., 5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) Order codes ID3TJmax max1STD7N60M2DPAKSTP7N60M2 650 V 0.95 5 ATABSTU7N60M2TAB Extremely low gate charge332 Lower RDS(on) x area vs previous generation21

 0.30. Size:161K  fairchild semi
hgtd7n60c3s hgtp7n60c3.pdf

7N60
7N60

HGTD7N60C3S, HGTP7N60C3Data Sheet December 200114A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTD7N60C3S and HGTP7N60C3 are MOS gated 14A, 600V at TC = 25oChigh voltage switching devices combining the best features 600V Switching SOA Capabilityof MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ =

 0.31. Size:1062K  fairchild semi
fch47n60 f133 fca47n60 fca47n60 f109.pdf

7N60
7N60

December 2008TMSuperFETFCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.058balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=210nC) lowe

 0.32. Size:557K  fairchild semi
hgt1s7n60c3ds hgtp7n60c3d.pdf

7N60
7N60

September 2005HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast DiodesGeneral Description FeaturesThe HGTP7N60C3D, HGT1S7N60C3DS and 14A, 600V at TC = 25oCHGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and 600V Switching SOA Capabilitybipolar transistors. These devices ha

 0.33. Size:969K  fairchild semi
fcu7n60tu.pdf

7N60
7N60

December 2008 TMSuperFETFCD7N60 / FCU7N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.53balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=23nC) lower gate charge performan

 0.34. Size:382K  fairchild semi
fch47n60f f085.pdf

7N60
7N60

October 2013FCH47N60F_F085N-Channel MOSFET600V, 47A, 75m DFeatures Typ rDS(on) = 66m at VGS = 10V, ID = 47A Typ Qg(tot) = 190nC at VGS = 10V, ID = 47AG UIS Capability RoHS CompliantTO-247 Qualified to AEC Q101GSDSDescription SuperFETTM is Fairchilds proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance Forcurren

 0.35. Size:381K  fairchild semi
fch47n60 f085.pdf

7N60
7N60

November 2013FCH47N60_F085N-Channel MOSFET600V, 47A, 79m DFeatures Typ rDS(on) = 64m at VGS = 10V, ID = 47A Typ Qg(tot) = 187nC at VGS = 10V, ID = 47AG UIS Capability RoHS CompliantTO-247 Qualified to AEC Q101GSDSDescription SuperFETTM is Fairchilds proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance Forcurren

 0.36. Size:921K  fairchild semi
ssp7n60b sss7n60b.pdf

7N60
7N60

SSP7N60B/SSS7N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.0A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to Fast switchi

 0.37. Size:579K  fairchild semi
fqp7n60.pdf

7N60
7N60

April 2000TMQFETQFETQFETQFETFQP7N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been esp

 0.38. Size:497K  fairchild semi
hgtp7n60b3d hgt1s7n60b3d.pdf

7N60
7N60

HGTP7N60B3D, HGT1S7N60B3DSData Sheet December 200114A, 600V, UFS Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diode 14A, 600V, TC = 25oCThe HGTP7N60B3D and HGT1S7N60B3DS are MOS gated 600V Switching SOA Capabilityhigh voltage switching devices combining the best features Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150oCof MOSFETs an

 0.39. Size:599K  fairchild semi
fch47n60n.pdf

7N60
7N60

May 2010SupreMOSTMFCH47N60NN-Channel MOSFET 600V, 47A, 62mFeatures Description RDS(on) = 51.5m ( Typ.)@ VGS = 10V, ID =23.5 A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg =115nC)process that differentiates it from preceding multi-epi based technologies. By ut

 0.40. Size:295K  fairchild semi
fch47n60nf.pdf

7N60
7N60

January 2011SupreMOSTMFCH47N60NFN-Channel MOSFET, FRFET 600V, 47A, 65mFeatures Description RDS(on) = 57.5m (Typ.) @ VGS = 10V, ID = 23.5A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge (Typ. Qg = 121nC)process that differentiates it from preceding multi-epi based techno

 0.41. Size:1228K  fairchild semi
fcp7n60 fcpf7n60 fcpf7n60ydtu fcpf7n60t fcpf7n60ydtu.pdf

7N60
7N60

December 2008 TMSuperFETFCP7N60/FCPF7N60/FCPF7N60YDTUFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.53balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=25nC) lower gate charge performance. This advan

 0.42. Size:197K  fairchild semi
fch47n60f.pdf

7N60
7N60

FebruaryTMSuperFETFCH47N60F _F133600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.062balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 240ns) lower gate charge performance. Ult

 0.43. Size:932K  fairchild semi
fci7n60.pdf

7N60
7N60

December 2008 TMSuperFETFCI7N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.53balance mechanism for outstanding low on-resistance and Ultra Low Gate Charge (typ. Qg = 25nC) lower gate charge performance.

 0.44. Size:663K  fairchild semi
fdd7n60nz fdd7n60nztm fdu7n60nztu.pdf

7N60
7N60

November 2013FDD7N60NZ / FDU7N60NZTUN-Channel UniFETTM II MOSFET600 V, 5.5 A, 1.25 Features Description RDS(on) = 1.05 (Typ.) @ VGS = 10 V, ID = 2.75 A UniFETTM II MOSFET is Fairchild Semiconductors high voltageMOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 13 nC)technology. This advanced MOSFET family has the smallest on- Low Crs

 0.45. Size:191K  fairchild semi
fca47n60f.pdf

7N60
7N60

January 2009 TMSuperFETFCA47N60F 600V N-Channel MOSFET, FRFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.062balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 240ns) lower gate charge performance.

 0.46. Size:581K  fairchild semi
fqa7n60.pdf

7N60
7N60

April 2000TMQFETQFETQFETQFETFQA7N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.7A, 600V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been esp

 0.47. Size:286K  fairchild semi
fch47n60 fch47n60 f133.pdf

7N60
7N60

FebruaryTMSuperFETFCH47N60_F133 Features Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.058balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=210nC) lower gate charge performance. This advanced technology has

 0.48. Size:604K  fairchild semi
fqpf7n60.pdf

7N60
7N60

April 2000TMQFETQFETQFETQFETFQPF7N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.3A, 600V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been es

 0.49. Size:173K  fairchild semi
hgtp7n60a4 hgtg7n60a4 hgt1s7n60a4.pdf

7N60
7N60

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4Data Sheet September 2004600V, SMPS Series N-Channel IGBT FeaturesThe HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 >100kHz Operation at 390V, 7Aare MOS gated high voltage switching devices combining 200kHz Operation at 390V, 5Athe best features of MOSFETs and bipolar transistors. These 600V Switching SOA Capabilitydevices have t

 0.50. Size:280K  fairchild semi
fdp7n60nz fdpf7n60nz.pdf

7N60
7N60

September 2010UniFET-II TMFDP7N60NZ / FDPF7N60NZN-Channel MOSFET600V, 6.5A, 1.25Features Description RDS(on) = 1.05 ( Typ.)@ VGS = 10V, ID = 3.25A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 13nC)DOMS technology. Low Crss ( Typ. 7pF)This advance techn

 0.51. Size:787K  fairchild semi
fcp7n60n fcpf7n60nt.pdf

7N60
7N60

December 2009SupreMOSTMFCP7N60N / FCPF7N60NTN-Channel MOSFET 600V, 6.8A, 0.52Features Description RDS(on) = 0.46 ( Typ.) @ VGS = 10V, ID = 3.4A The SupreMOS MOSFET, Fairchilds next generation of highvoltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 17.8nC)process that differentiates it from preceding multi-epi based

 0.52. Size:651K  fairchild semi
fqb7n60tm fqb7n60 fqi7n60 fqi7n60tu.pdf

7N60
7N60

October 2008QFETFQB7N60 / FQI7N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been especially

 0.53. Size:761K  fairchild semi
fdp17n60n fdpf17n60nt.pdf

7N60
7N60

July 2009UniFETTMFDP17N60N / FDPF17N60NTN-Channel MOSFET 600V, 17A, 0.34Features Description RDS(on) = 0.29 ( Typ.)@ VGS = 10V, ID = 8.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 48nC)stripe, DMOS technology. Low Crss ( Typ. 23pF)This advanced technology has b

 0.54. Size:1005K  fairchild semi
fcd7n60 fcu7n60.pdf

7N60
7N60

December 2008 TMSuperFETFCD7N60 / FCU7N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.53balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=23nC) lower gate charge performan

 0.55. Size:57K  njs
mtp7n60.pdf

7N60
7N60

 0.56. Size:505K  samsung
ssw7n60a.pdf

7N60
7N60

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V2 Lower RDS(ON) : 0.977 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

 0.57. Size:912K  samsung
ssh7n60a.pdf

7N60
7N60

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 7.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 0.977 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

 0.58. Size:581K  samsung
ssp7n60a.pdf

7N60
7N60

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 0.977 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

 0.59. Size:944K  samsung
ssh17n60a.pdf

7N60
7N60

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 0.45 Rugged Gate Oxide Technology Lower Input CapacitanceID = 17 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 0.356 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

 0.60. Size:504K  samsung
sss7n60a.pdf

7N60
7N60

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 0.977 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

 0.61. Size:179K  vishay
irfp27n60k sihfp27n60k.pdf

7N60
7N60

IRFP27N60K, SiHFP27N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.18RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 180COMPLIANTRuggednessQgs (nC) 56 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 86and CurrentCo

 0.62. Size:147K  vishay
sihw47n60e.pdf

7N60
7N60

SiHW47N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.064 Reduced Switching and Conduction LossesQg max. (nC) 220 Ultra Low Gate Charge (Qg)Qgs (nC) 36 Avalanche Energy Rated (UIS)Qgd (nC) 60

 0.63. Size:219K  vishay
sihp17n60d.pdf

7N60
7N60

SiHP17N60Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 650- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.340- Low Input Capacitance (Ciss)Qg (Max.) (nC) 90- Reduced Capacitive Switching LossesQgs (nC) 14- High Body Diode RuggednessQgd (nC) 22- Avalanche Energy Rated (UIS

 0.64. Size:187K  vishay
sihg17n60d.pdf

7N60
7N60

SiHG17N60Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 650- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.340- Low Input Capacitance (Ciss)Qg (Max.) (nC) 90- Reduced Capacitive Switching LossesQgs (nC) 14- High Body Diode RuggednessQgd (nC) 22- Avalanche Energy Rated (UIS

 0.65. Size:1018K  vishay
irfb17n60k irfb17n60kpbf.pdf

7N60
7N60

IRFB17N60K, SiHFB17N60KVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Smaller TO-220 PackageVDS (V) 600Available Low Gate Charge Qg Results in Simple DriveRDS(on) ()VGS = 10 V 0.35RoHS*RequirementQg (Max.) (nC) 99COMPLIANT Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 32RuggednessQgd (nC) 47 Fully Characterized Capacitance and Avalanc

 0.66. Size:170K  vishay
sihg47n60s.pdf

7N60
7N60

SiHG47N60Swww.vishay.comVishay SiliconixS Series Power MOSFETFEATURESPRODUCT SUMMARY Generation OneVDS (V) at TJ max. 650 Low Figure-of-Merit Ron x QgRoHS RDS(on) max. at 25 C () VGS = 10 V 0.07COMPLIANT 100 % Avalanche TestedQg max. (nC) 216 Ultra Low Gate ChargeQgs (nC) 39Qgd (nC) 57 Ultra Low RonConfiguration Single Compliant to R

 0.67. Size:206K  vishay
sihp7n60e.pdf

7N60
7N60

SiHP7N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6 Reduced Switching and Conduction LossesQg max. (nC) 40 Ultra Low Gate Charge (Qg)Qgs (nC) 5 Avalanche Energy Rated (UIS)Qgd (nC) 9 Mate

 0.68. Size:188K  vishay
sihd7n60e.pdf

7N60
7N60

SiHD7N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6 Reduced Switching and Conduction LossesQg max. (nC) 40 Ultra Low Gate Charge (Qg)Qgs (nC) 5 Avalanche Energy Rated (UIS)Qgd (nC) 9 Mate

 0.69. Size:191K  vishay
sihg47n60ef.pdf

7N60
7N60

SiHG47N60EFwww.vishay.comVishay SiliconixEF Series Power MOSFET with Fast Body DiodeFEATURESPRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650technologyRDS(on) max. at 25 C () VGS = 10 V 0.065 Reduced trr, Qrr, and IRRMQg max. (nC) 228 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)Qgs (nC) 32 Increased r

 0.70. Size:138K  vishay
sihh27n60ef.pdf

7N60
7N60

SiHH27N60EFwww.vishay.comVishay SiliconixE Series Power MOSFET With Fast Body DiodeFEATURESPin 4 Completely lead (Pb)-free devicePowerPAK 8 x 8 Low figure-of-merit (FOM) Ron x QgPin 1 Low input capacitance (Ciss)4 Reduced switching and conduction lossesPin 21 Ultra low gate charge (Qg)2 Avalanche energy rated (UIS)33 Pin 3 Kelvin co

 0.71. Size:183K  vishay
irfp27n60k irfp27n60kpbf sihfp27n60k.pdf

7N60
7N60

IRFP27N60K, SiHFP27N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.18RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 180COMPLIANTRuggednessQgs (nC) 56 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 86and CurrentCo

 0.72. Size:169K  vishay
sihu7n60e.pdf

7N60
7N60

SiHU7N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6 Reduced Switching and Conduction LossesQg max. (nC) 40 Ultra Low Gate Charge (Qg)Qgs (nC) 5 Avalanche Energy Rated (UIS)Qgd (nC) 9 Mate

 0.73. Size:171K  vishay
sihg47n60aef.pdf

7N60
7N60

SiHG47N60AEFwww.vishay.comVishay SiliconixEF Series Power MOSFET With Fast Body DiodeFEATURESD Low figure-of-merit (FOM) Ron x QgTO-247AC Low input capacitance (Ciss) Reduced switching and conduction lossesG Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of complianceSDS please see www.vishay.com

 0.74. Size:191K  vishay
sihg47n60e.pdf

7N60
7N60

SiHG47N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.064 Reduced switching and conduction lossesQg max. (nC) 220 Ultra low gate charge (Qg)Qgs (nC) 29AvailableQgd (nC) 57 Avalanche energy ra

 0.75. Size:162K  vishay
sihf7n60e.pdf

7N60
7N60

SiHF7N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6 Reduced Switching and Conduction LossesQg max. (nC) 40 Ultra Low Gate Charge (Qg)Qgs (nC) 5 Avalanche Energy Rated (UIS)Qgd (nC) 9 Mate

 0.76. Size:1389K  infineon
spb07n60c3.pdf

7N60
7N60

SPB07N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Ultra low gate chargePG-TO263 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductanceType Package Ordering Code MarkingSPB07N60C3 PG-TO263 Q67040-S4394 07N60C3Maximum RatingsP

 0.77. Size:975K  infineon
spd07n60c3 spu07n60c3.pdf

7N60
7N60

VDS Tjmax G G

 0.78. Size:616K  infineon
spw47n60cfd.pdf

7N60
7N60

SPW47N60CFDTMCIMOSTM "9@/; %;+877+;BFeatures V - R (7H C7GA>FE;A@3CJ :;9: GA>E397 E75:@A>A9JDS(on) maxR $@EC;@D;5 83DE C75AG7CJ 4A6J 6;A67 46 A46DR IEC7?7>J >AH C7G7CD7 C75AG7CJ 5:3C97R / >EC3 >AH 93E7 5:3C97PGTO247R IEC7?7 6v /dt C3E76/dR #;9: B73= 5FCC7@E 53B34;>;EJR *7C;A6;5 3G3>3@5:7 C3E76R + F3>;8;76 355AC6;@9 EA % R *4 8C77

 0.79. Size:888K  infineon
spd07n60s5 spu07n60s5.pdf

7N60
7N60

SPU07N60S5SPD07N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Worldwide best RDS(on) in TO-251 and TO-252PG-TO252 PG-TO251 Ultra low gate charge Periodic avalanche rated23 Extreme dv/dt rated3121 Ultra low effective capacitances Improved transconductanceType Packag

 0.80. Size:828K  infineon
spw47n60c3.pdf

7N60
7N60

VDS Tjmax G G

 0.81. Size:702K  infineon
spp07n60c3 spi07n60c3 spa07n60c3.pdf

7N60
7N60

SPP07N60C3SPI07N60C3, SPA07N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 High peak current capability2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1 P

 0.82. Size:620K  infineon
spp07n60c3 spa07n60c3 spi07n60c3 rev.3.2.pdf

7N60
7N60

SPP07N60C3SPI07N60C3, SPA07N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 High peak current capability2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1 P

 0.83. Size:568K  infineon
spp07n60cfd.pdf

7N60
7N60

SPP07N60CFDCoolMOSTM Power TransistorProduct SummaryFeaturesV @Tjmax 650 VDS Intrinsic fast-recovery body diodeR 0.7DS(on),max Extremely low reverse recovery chargeI 6.6 AD Ultra low gate charge Extreme dv /dt ratedPG-TO220 High peak current capability Qualified for industrial grade applications according to JEDEC1)CoolMOS CFD designed for:

 0.84. Size:667K  infineon
spw07n60cfd.pdf

7N60
7N60

SPW07N60CFDTMCIMOSTM #:A0D9:R 0.7DS(on) maxV "MIG:B:AN ADL G:K:GH: G:8DK:GN 8=6G;>:9 688DG9>CC

 0.85. Size:646K  infineon
spb07n60s5.pdf

7N60
7N60

SPB07N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 APG-TO263 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code Marking07N60S5SPB07N60S5 PG-TO263 Q67040-S4185Maximum RatingsPar

 0.86. Size:586K  infineon
spa07n60cfd.pdf

7N60
7N60

SPA07N60CFDCIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeaturesV 1jmax 650 VDSV &CIG>CH>8 ;6HI G:8DK:GN 7D9N 9>D9:R 0.7DS(on) maxV "MIG:B:AN ADL G:K:GH: G:8DK:GN 8=6G;>:9 for industrial grade applications 688DG9>C53:10 2;=V 0D;I HL>I8=>C

 0.87. Size:158K  infineon
spa07n60c2 spp07n60c2 spb07n60c2.pdf

7N60
7N60

SPP07N60C2, SPB07N60C2Final dataSPA07N60C2Cool MOS Power TransistorFeatureProduct Summary New revolutionary high voltage technologyVDS @ Tjmax 650 V Ultra low gate chargeRDS(on) 0.6 Periodic avalanche ratedID 7.3 A Extreme dv/dt rated Ultra low effective capacitancesP-TO220-3-31 P-TO263-3-2 P-TO220-3-1321P-TO220-3-31Type Package Orderi

 0.88. Size:528K  infineon
spp07n60s5 spi07n60s5.pdf

7N60
7N60

SPP07N60S5SPI07N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Worldwide best RDS(on) in TO 220PG-TO262 PG-TO220 Ultra low gate charge2 Periodic avalanche rated Extreme dv/dt rated321 Ultra low effective capacitancesP-TO220-3-1 Improved transconductanceType Package Or

 0.89. Size:77K  ixys
ixgp7n60bd1.pdf

7N60
7N60

Advanced Technical InformationIXGA 7N60BD1 VCES = 600 VHiPerFASTTM IGBTIXGP 7N60BD1 IC25 = 14 Awith DiodeVCE(sat) = 2.0 Vtfi = 150nsSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCEVGEM Transient 30 VIC25 TC = 25C 14 ATO-263 AA (IXGA)IC90 TC = 90C 7

 0.90. Size:159K  ixys
ixfa7n60p3 ixfp7n60p3.pdf

7N60
7N60

Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 600VIXFA7N60P3Power MOSFETs ID25 = 7AIXFP7N60P3 RDS(on) 1.15 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-263 AA (IXFA)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 600 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 600 VTO-220AB

 0.91. Size:66K  ixys
ixga7n60c.pdf

7N60
7N60

VCES = 600 VIXGA 7N60CHiPerFASTTM IGBTIC25 = 14 AIXGP 7N60CLightspeedTM SeriesVCE(sat) = 2.7 Vtfi = 45 nsSymbol Test Conditions Maximum Ratings TO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C 14 AIC90 TC = 90C 7 AICM TC = 25C, 1 ms 30

 0.92. Size:89K  ixys
ixgp7n60cd1.pdf

7N60
7N60

IXGA 7N60CD1 VCES = 600 VHiPerFASTTM IGBTIXGP 7N60CD1 IC25 = 14 Awith DiodeVCE(sat)typ = 2.0 VLightspeedTM Seriestfi = 45 nsPreliminary DataSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCEVGEM Transient 30 VIC25 TC = 25C 14 ATO-263 AA (IXGA)IC90 TC

 0.93. Size:65K  ixys
ixga7n60c ixgp7n60c.pdf

7N60
7N60

VCES = 600 VIXGA 7N60CHiPerFASTTM IGBTIC25 = 14 AIXGP 7N60CLightspeedTM SeriesVCE(sat) = 2.7 Vtfi = 45 nsSymbol Test Conditions Maximum Ratings TO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C 14 AIC90 TC = 90C 7 AICM TC = 25C, 1 ms 30

 0.94. Size:182K  ixys
ixta7n60p ixtp7n60p.pdf

7N60
7N60

VDSS = 600 VIXTA 7N60PPolarHVTMID25 = 7 AIXTP 7N60PPower MOSFET RDS(on) 1.1 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25 C to 175 C 600 VVDGR TJ = 25 C to 175 C; RGS = 1 M 600 VVGS Continuous 30 V(TAB)GVGSM Transient 40 VDSID25 TC = 25 C7 A

 0.95. Size:68K  ixys
ixga7n60b.pdf

7N60
7N60

VCES = 600 VHiPerFASTTM IGBT IXGA 7N60BIC25 = 14 AIXGP 7N60BVCE(sat) = 2 Vtfi = 150 nsSymbol Test Conditions Maximum Ratings TO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C 14 AIC90 TC = 90C 7 AICM TC = 25C, 1 ms 30 AGC (TAB)ESSOA

 0.96. Size:70K  ixys
ixga7n60b ixgp7n60b.pdf

7N60
7N60

VCES = 600 VHiPerFASTTM IGBT IXGA 7N60BIC25 = 14 AIXGP 7N60BVCE(sat) = 2 Vtfi = 150 nsSymbol Test Conditions Maximum Ratings TO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C 14 AIC90 TC = 90C 7 AICM TC = 25C, 1 ms 30 AGC (TAB)ESSOA

 0.97. Size:63K  ixys
ixgp7n60c.pdf

7N60
7N60

VCES = 600 VIXGA 7N60CHiPerFASTTM IGBTIC25 = 14 AIXGP 7N60CLightspeedTM SeriesVCE(sat) = 2.7 Vtfi = 45 nsSymbol Test Conditions Maximum Ratings TO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C 14 AIC90 TC = 90C 7 AICM TC = 25C, 1 ms 30

 0.98. Size:77K  ixys
ixga7n60bd1.pdf

7N60
7N60

Advanced Technical InformationIXGA 7N60BD1 VCES = 600 VHiPerFASTTM IGBTIXGP 7N60BD1 IC25 = 14 Awith DiodeVCE(sat) = 2.0 Vtfi = 150nsSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCEVGEM Transient 30 VIC25 TC = 25C 14 ATO-263 AA (IXGA)IC90 TC = 90C 7

 0.99. Size:89K  ixys
ixga7n60cd1.pdf

7N60
7N60

IXGA 7N60CD1 VCES = 600 VHiPerFASTTM IGBTIXGP 7N60CD1 IC25 = 14 Awith DiodeVCE(sat)typ = 2.0 VLightspeedTM Seriestfi = 45 nsPreliminary DataSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCEVGEM Transient 30 VIC25 TC = 25C 14 ATO-263 AA (IXGA)IC90 TC

 0.100. Size:68K  ixys
ixgp7n60b.pdf

7N60
7N60

VCES = 600 VHiPerFASTTM IGBT IXGA 7N60BIC25 = 14 AIXGP 7N60BVCE(sat) = 2 Vtfi = 150 nsSymbol Test Conditions Maximum Ratings TO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C 14 AIC90 TC = 90C 7 AICM TC = 25C, 1 ms 30 AGC (TAB)ESSOA

 0.101. Size:242K  onsemi
hgt1s7n60a4s9a hgtg7n60a4 hgtp7n60a4.pdf

7N60
7N60

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4Data Sheet September 2004600V, SMPS Series N-Channel IGBT FeaturesThe HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 >100kHz Operation at 390V, 7Aare MOS gated high voltage switching devices combining 200kHz Operation at 390V, 5Athe best features of MOSFETs and bipolar transistors. These 600V Switching SOA Capabilitydevices have t

 0.102. Size:282K  onsemi
hgtd7n60c3s hgtp7n60c3.pdf

7N60
7N60

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.103. Size:363K  onsemi
fgb7n60undf.pdf

7N60
7N60

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.104. Size:543K  onsemi
fcd7n60.pdf

7N60
7N60

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.105. Size:673K  onsemi
fch47n60n.pdf

7N60
7N60

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.106. Size:786K  onsemi
fcpf7n60nt.pdf

7N60
7N60

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.107. Size:675K  onsemi
fch47n60nf.pdf

7N60
7N60

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.108. Size:582K  onsemi
fcp7n60 fcpf7n60.pdf

7N60
7N60

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.109. Size:408K  onsemi
fch47n60f.pdf

7N60
7N60

MOSFET N-Channel,SUPERFET), FRFET)600 V, 47 A, 73 mWFCH47N60FDescriptionSUPERFET MOSFET is ON Semiconductors first generation ofwww.onsemi.comhigh voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistanceand lower gate charge performance. This technology is tailored toVDS RDS(ON) MAX ID MAXminimize conduct

 0.110. Size:509K  onsemi
fch47n60.pdf

7N60
7N60

MOSFET N ,SUPERFET) II600 V, 47 A, 70 mWFCH47N60 www.onsemi.cnSUPERFET MOSFET ON Semiconductor (SJ) MOSFET VDS RDS(ON) MAX ID MAX dv/dt 600 V 70 mW @ 10 V 47 ASUPERFET MOSFET (PFC) / ATX D 650 V @ TJ = 150C

 0.111. Size:441K  onsemi
fci7n60.pdf

7N60
7N60

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.112. Size:2138K  onsemi
fca47n60f.pdf

7N60
7N60

201 FCA47N60FN-Channel SuperFET FRFET MOSFET600 V, 47 A, 73 m 650 V @ TJ = 150 CSuperFET MOSFET (SJ) RDS(on) = 62 mMOSFET

 0.113. Size:1448K  onsemi
fca47n60.pdf

7N60
7N60

2017 9 FCA47N60 N SuperFET MOSFET600 V, 47 A, 70 m 650 V @ TJ = 150CSuperFETMOSFET RDS(on) = 58 m(SJ)MOSFET

 0.114. Size:724K  onsemi
fdp7n60nz fdpf7n60nz.pdf

7N60
7N60

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.115. Size:770K  onsemi
fqb7n60 fqi7n60.pdf

7N60
7N60

FQB7N60 / FQI7N60N-Channel QFET MOSFET600 V, 7.4 A, 1.0 Features 7.4 A, 600 V, RDS(on) = 1.0 (Max.) @VGS = 10 V,Description ID = 3.7 AThis N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 29 nC)produced using ON Semiconductors proprietary Low Crss (Typ. 16 pF)planar stripe and DMOS technology. This advanced MOSFET technology has been

 0.116. Size:537K  onsemi
hgtg7n60a4d hgtp7n60a4d hgt1s7n60a4ds.pdf

7N60
7N60

SMPS Series N-ChannelIGBT with Anti-ParallelHyperfast Diode600 VHGTG7N60A4D,www.onsemi.comHGTP7N60A4D,HGT1S7N60A4DSThe HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DSare MOS gated high voltage switching devices combining the bestfeatures of MOSFETs and bipolar transistors. These devices have thehigh input impedance of a MOSFET and the low on-state conductionloss of a bipolar

 0.117. Size:187K  utc
7n60l.pdf

7N60
7N60

UNISONIC TECHNOLOGIES CO., LTD 7N60L Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicati

 0.118. Size:260K  utc
7n60a.pdf

7N60
7N60

UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switchingperformance, and withstand high energy pulse in the avalancheand commutation mode. This power MOSFET is well sui

 0.119. Size:349K  utc
7n60l-ta3-t 7n60g-ta3-t 7n60l-tf3-t 7n60g-tf3-t 7n60l-tf1-t 7n60g-tf1-t 7n60l-tf2-t 7n60g-tf2-t.pdf

7N60
7N60

UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicatio

 0.120. Size:259K  utc
7n60k.pdf

7N60
7N60

UNISONIC TECHNOLOGIES CO., LTD 7N60K Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicat

 0.121. Size:349K  utc
7n60l-tf3t-t 7n60g-tf3t-t 7n60l-t2q-t 7n60g-t2q-t 7n60l-tq2-t 7n60g-tq2-t 7n60l-tq2-r 7n60g-tq2-r.pdf

7N60
7N60

UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicatio

 0.122. Size:180K  utc
7n60z.pdf

7N60
7N60

UNISONIC TECHNOLOGIES CO., LTD 7N60Z Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The UTC 7N60Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche 1TO-220F1characteristics. This power MOSFET is usually used in high speed swi

 0.123. Size:168K  apt
apt47n60bc3.pdf

7N60
7N60

APT47N60BC3APT47N60SC3600V 47A 0.070Super Junction MOSFETD3PAKTO-247COOLMOSPower Semiconductors Ultra low RDS(ON) Low Miller CapacitanceD Ultra Low Gate Charge, Qg Avalanche Energy RatedG TO-247 or Surface Mount D3PAK PackageSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT47N60BC3_SC3

 0.124. Size:402K  apt
apt47n60bcfg.pdf

7N60
7N60

FINAL DATA SHEET 600V 46A 0.083 APT47N60BCF APT47N60SCF APT47N60BCFG* APT47N60SCFG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction FREDFET (B)COOLMOSPower SemiconductorsD3PAK Ultra Low RDS(ON) Intrinsic Fast-Recovery Body Diode(S) Low Miller Capacitance Extreme Low Reverse Recovery Charge Ultra Low Gate Charge, Qg Ideal For Z

 0.125. Size:175K  apt
apt77n60jc3.pdf

7N60
7N60

APT77N60JC3600V 77A 0.035Super Junction MOSFETCOOLMOSPower Semiconductors Ultra low RDS(ON)"UL Recognized" Low Miller CapacitanceISOTOP Ultra Low Gate Charge, QgD Avalanche Energy Rated N-Channel Enhancement Mode G Popular SOT-227 PackageSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter

 0.126. Size:525K  fuji
fmh17n60es.pdf

7N60
7N60

FMH17N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3P(Q)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5V

 0.127. Size:579K  fuji
fmw47n60s1hf.pdf

7N60
7N60

http://www.fujielectric.com/products/semiconductor/FMW47N60S1HF FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicLow on-state resistanceTO-247-P2Low switching losseasy to use (more controllabe switching dV/dt by R )gDrain(D)ApplicationsUPSServerGate(G)Telecom Source(S)

 0.128. Size:509K  fuji
fmh47n60s1.pdf

7N60
7N60

http://www.fujielectric.com/products/semiconductor/FMH47N60S1 FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicLow on-state resistance 3.2 0.1TO-3P15.5max13 0.2 1.50.2Low switching loss10 0.2 4.50.2easy to use (more controllabe switching dV/dt by R )gDrain(D)Applications

 0.129. Size:517K  fuji
fmr17n60es.pdf

7N60
7N60

FMR17N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3PFLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5V)

 0.130. Size:514K  fuji
fmv17n60es.pdf

7N60
7N60

FMV17N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.2

 0.131. Size:260K  harris semi
hgtp7n60.pdf

7N60
7N60

HGTP7N60C3D, HGT1S7N60C3D,S E M I C O N D U C T O RHGT1S7N60C3DS14A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeMay 1996Features PackagingJEDEC TO-220AB 14A, 600V at TC = +25oCEMITTERCOLLECTOR 600V Switching SOA CapabilityGATE Typical Fall Time - 140ns at TJ = +150oC Short Circuit RatingCOLLECTOR (FLANGE) Low Conduction Loss

 0.132. Size:222K  harris semi
hgtd7n60.pdf

7N60
7N60

HGTD7N60C3,S E M I C O N D U C T O RHGTD7N60C3S, HGTP7N60C314A, 600V, UFS Series N-Channel IGBTJune 1996Features Packaging JEDEC TO-220AB 14A, 600V at TC = +25oC COLLECTOREMITTER 600V Switching SOA CapabilityGATE Typical Fall Time - 140ns at TJ = +150oC Short Circuit Rating Low Conduction LossCOLLECTOR (FLANGE)DescriptionJEDEC TO-251AAThe HGTD7N60C

 0.133. Size:417K  taiwansemi
tsm7n60ci tsm7n60cz.pdf

7N60
7N60

TSM7N60 600V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 600 1.2 @ VGS =10V 3.5 General Description The TSM7N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide su

 0.134. Size:506K  jiangsu
cjp07n60.pdf

7N60
7N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP07N60 N-Channel Power MOSFET TO-220-3L General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in ava

 0.135. Size:381K  jiangsu
cjpf07n60.pdf

7N60
7N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF07N60 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high s

 0.136. Size:396K  kec
kf7n60p kf7n60f.pdf

7N60
7N60

KF7N60P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF7N60PAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERSG_correction and switching mode power supp

 0.137. Size:93K  kec
kf7n60p-f.pdf

7N60
7N60

KF7N60P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF7N60PAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERSG_correction and switching mode power supp

 0.138. Size:225K  microsemi
apt47n60bc3g apt47n60sc3g.pdf

7N60
7N60

APT47N60BC3(G) APT47N60SC3(G)600V 47A 0.070Super Junction MOSFET D3PAK Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated D Extreme dv/dt Rated Popular TO-247 or Surface Mount D3 package.G RoHS Compliant SMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified. Symbol Parameter APT47N60B

 0.139. Size:144K  microsemi
apt77n60bc6 apt77n60sc6.pdf

7N60
7N60

APT77N60BC6 APT77N60SC6 600V 77A 0.041 COOLMOSPower Semiconductors Super Junction MOSFET Ultra Low RDS(ON) D3PAK Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt RatedD Popular TO-247 or Surface Mount D3 package.GSMAXIMUM RATINGS All Ratings per die: TC = 25C unless otherwise specified. Symbol Parame

 0.140. Size:1752K  willsemi
wnm07n60-f.pdf

7N60
7N60

WNM07N60/WNM07N60FWNM07N60/WNM07N60F600V N-Channel MOSFETDescription FeaturesCThe WNM07N60/WNM07N60F is N-Channel 600V@TJ=25enhancement MOS Field Effect Transistor. Uses Typ.RDS(on)=1.0 advanced high voltage MOSFET Process and Low gate chargedesign to provide excellent RDS (ON) with low gate 100% avalanche testedcharge. This device is suitable for use in p

 0.141. Size:79K  hsmc
h07n60.pdf

7N60
7N60

Spec. No. : MOS200604 HI-SINCERITY Issued Date : 2006.02.01 Revised Date : 2006.02.07 MICROELECTRONICS CORP. Page No. : 1/5 H07N60 Series Pin Assignment H07N60 Series Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220ABPackage Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: SourceThis high voltage MOSFET uses an advanced termination schem

 0.142. Size:498K  aosemi
aotf7n60.pdf

7N60
7N60

AOT7N60/AOTF7N60600V,7A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT7N60 & AOTF7N60 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 7Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 0.143. Size:339K  aosemi
aotf7n60fd.pdf

7N60
7N60

AOTF7N60FD600V, 7A N-Channel MOSFET with Fast Recovery DiodeGeneral Description Product Summary VDS700V@150The AOTF7N60FD has been fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 7Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 0.144. Size:498K  aosemi
aot7n60.pdf

7N60
7N60

AOT7N60/AOTF7N60600V,7A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT7N60 & AOTF7N60 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 7Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 0.145. Size:387K  aosemi
aoi7n60.pdf

7N60
7N60

AOD7N60/AOI7N60600V,7A N-Channel MOSFETGeneral Description Product SummaryThe AOD7N60 & AOI7N60 have been fabricated using anadvanced high voltage MOSFET process that is designed VDS 700V@150to deliver high levels of performance and robustness in ID (at VGS=10V) 7Apopular AC-DC applications. RDS(ON) (at VGS=10V)

 0.146. Size:387K  aosemi
aod7n60.pdf

7N60
7N60

AOD7N60/AOI7N60600V,7A N-Channel MOSFETGeneral Description Product SummaryThe AOD7N60 & AOI7N60 have been fabricated using anadvanced high voltage MOSFET process that is designed VDS 700V@150to deliver high levels of performance and robustness in ID (at VGS=10V) 7Apopular AC-DC applications. RDS(ON) (at VGS=10V)

 0.147. Size:661K  ark-micro
ftp07n60 fta07n60.pdf

7N60
7N60

FTP07N60/FT A07N60 600V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features Low ON Resistance 600V 1.1 7.0A Low Gate Charge (typical 38.6nC) Fast Switching 100% Avalanche Tested RoHS Compliant Halogen-free available Applications High Efficiency SMPS Adaptor/Charger Active PFC LCD Panel Power Ordering Information

 0.148. Size:779K  shenzhen
sss7n60.pdf

7N60
7N60

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS7N60600Volts7.0Amps 600Volts600Volts600VoltsN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFET DESCRIPTIONThe SSS7N60 is a high voltage MOSFET and is designed to have better characteristics,such as fast switching time, low gate charge, low on-state resistance and have a highrugged avalanche chara

 0.149. Size:348K  sisemi
sif7n60d.pdf

7N60
7N60

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF7N60DN- MOS / N-CHANNEL POWER MOSFET SIF7N60DN

 0.150. Size:348K  sisemi
sif7n60c.pdf

7N60
7N60

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF7N60CN- MOS / N-CHANNEL POWER MOSFET SIF7N60CN

 0.151. Size:755K  jilin sino
jcs7n60s jcs7n60b jcs7n60c jcs7n60f.pdf

7N60
7N60

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS7N60 \ Package ;NSpe MAIN CHARACTERISTICS ID 7.0 A 600 V VDSS 1.2 &! Rdson@Vgs=10V54 nC Qg APPLICATIONS (u High efficiency switch

 0.152. Size:904K  jilin sino
jcs7n60bb jcs7n60sb jcs7n60cb jcs7n60fb.pdf

7N60
7N60

N RN-CHANNEL MOSFET JCS7N60B MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.2 @Vgs=10V Qg-typ 25 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L

 0.153. Size:238K  cystek
mtn7n60e3.pdf

7N60
7N60

Spec. No. : C409E3 Issued Date : 2011.12.20 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 1.08(typ.) MTN7N60E3 ID : 7A Description The MTN7N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance an

 0.154. Size:277K  cystek
mtn7n60fp.pdf

7N60
7N60

Spec. No. : C409FP Issued Date : 2008.09.02 CYStech Electronics Corp.Revised Date : 2011.03.29 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 1.08(typ.) MTN7N60FP ID : 7A Description The MTN7N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

 0.155. Size:159K  solitron
sdf17n60.pdf

7N60

 0.156. Size:433K  silikron
ssf7n60.pdf

7N60
7N60

SSF7N60 Features VDSS = 600V Extremely high dv/dt capability ID = 7A Low Gate Charge Qg results in Simple Drive Requirement Rdson = 0.9 (typ.) 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Description The SSF7N60 is a new generation of high voltage NChannel enhancement mode

 0.157. Size:523K  silikron
ssf7n60f.pdf

7N60
7N60

SSF7N60F Main Product Characteristics: VDSS 600V RDS(on) 0.9ohm(typ.) ID 7A Marking and p in TO220F Schematic diagram Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 0.158. Size:243K  inpower semi
fsa07n60a.pdf

7N60
7N60

FSA07N60AN-Channel MOSFET PbLead Free Package and FinishApplications:VDSS RDS(ON) (Max.) ID Adaptor Charger600 V 1.25 7.0 A SMPS Standby PowerFeatures: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve ESD improved CapabilityGDS TO-220FOrdering InformationPART NUMBER PACKAGE BRANDPackagesFSA07N6

 0.159. Size:747K  blue-rocket-elect
brb7n60.pdf

7N60
7N60

BRB7N60(3BRCS7N60CB) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hi

 0.160. Size:1008K  blue-rocket-elect
brf7n60.pdf

7N60
7N60

BRF7N60(BRCS7N60FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for

 0.161. Size:527K  blue-rocket-elect
brfl7n60.pdf

7N60
7N60

BRFL7N60 Rev.E Dec.-2017 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effic

 0.162. Size:1024K  blue-rocket-elect
br7n60.pdf

7N60
7N60

BR7N60(BRCS7N60R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high

 0.163. Size:653K  nell
7n60af 7n60h.pdf

7N60
7N60

RoHS 7N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(7A, 600Volts)DESCRIPTION The Nell 7N60 is a three-terminal silicon device with current conduction capability of 7A,Dfast switching speed, low on-state resistance,breakdown voltage rating of 600V ,and max. threshold voltage of 4 volts. They are designed for use in applications. suchas sw

 0.164. Size:616K  shantou-huashan
hfh7n60.pdf

7N60
7N60

Shantou Huashan Electronic Devices Co.,Ltd. HFH7N60 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance

 0.165. Size:644K  shantou-huashan
hff7n60.pdf

7N60
7N60

Shantou Huashan Electronic Devices Co., Ltd. HFF7N60 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220FThey are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan

 0.166. Size:652K  shantou-huashan
hfp7n60.pdf

7N60
7N60

Shantou Huashan Electronic Devices Co., Ltd. HFP7N60 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan

 0.167. Size:625K  crhj
cs7n60f a9hdy.pdf

7N60
7N60

Silicon N-Channel Power MOSFET R CS7N60F A9HDY General Description VDSS 600 V CS7N60F A9HDY, the silicon N-channel Enhanced ID 7 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 0.168. Size:352K  crhj
cs7n60 a8hd.pdf

7N60
7N60

Silicon N-Channel Power MOSFET R CS7N60 A8HD General Description VDSS 600 V CS7N60 A8HD, the silicon N-channel Enhanced ID 7 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.169. Size:348K  crhj
cs7n60 a7hd.pdf

7N60
7N60

Silicon N-Channel Power MOSFET R CS7N60 A7HD General Description VDSS 600 V CS7N60 A7HD, the silicon N-channel Enhanced ID 7 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.170. Size:279K  crhj
cs7n60 a3r.pdf

7N60
7N60

Silicon N-Channel Power MOSFET R CS7N60 A3R General Description VDSS 600 V CS7N60 A3R, the silicon N-channel Enhanced ID 7 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.171. Size:351K  crhj
cs7n60f a9hd.pdf

7N60
7N60

Silicon N-Channel Power MOSFET R CS7N60F A9HD General Description VDSS 600 V CS7N60F A9HD, the silicon N-channel Enhanced ID 7 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 0.172. Size:286K  crhj
cs7n60 a4r.pdf

7N60
7N60

Silicon N-Channel Power MOSFET R CS7N60 A4R General Description VDSS 600 V CS7N60 A4R, the silicon N-channel Enhanced ID 7 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.173. Size:269K  crhj
cs7n60f a9r.pdf

7N60
7N60

Silicon N-Channel Power MOSFET R CS7N60F A9R General Description VDSS 600 V CS7N60F A9R, the silicon N-channel Enhanced ID 7 A PD(TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.174. Size:124K  china
cs47n60.pdf

7N60

CS47N60 N PD TC=25 417 W 3.33 W/ ID VGS=10V,TC=25 47 A IDM 141 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.3 /W BVDSS VGS=0V,ID=0.25mA 600 V RDS on VGS=10V,ID=30A 0.06 0.07 VGS th VDS=V

 0.175. Size:123K  jdsemi
cm7n60 to220a.pdf

7N60
7N60

RCM7N60 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE2 3

 0.176. Size:125K  jdsemi
cm7n60f.pdf

7N60
7N60

RCM7N60F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE2 12

 0.177. Size:247K  first silicon
ftk7n60p f dd.pdf

7N60
7N60

SEMICONDUCTORFTK7N60P / F / DDTECHNICAL DATAPower MOSFET7.0 Amps, 600 VoltsN-CHANNEL MOSFET P :1DESCRIPTIONTO-220The FTK 7N60 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at high speedF :s

 0.178. Size:512K  silan
svf7n60f svf7n60s svf7n60d.pdf

7N60
7N60

SVF7N60F/S/D 7A600V N SVF7N60F/S/D N MOS F-CellTM VDMOS AC-DC

 0.179. Size:783K  silan
svf7n60cf svf7n60cs svf7n60ck svf7n60cmj svf7n60cd svf7n60ct.pdf

7N60
7N60

SVF7N60CF/S/K/MJ/D/T 7A600V N SVF7N60CF/S/K/MJ/D/T N MOS F-CellTM VDMOS

 0.180. Size:452K  silan
svf7n60cf svf7n60cs svf7n60cstr svf7n60ck svf7n60cmj svf7n60cd svf7n60cdtr svf7n60ct.pdf

7N60
7N60

SVF7N60CF/S/K/MJ/D/T 7A600V N 2 SVF7N60CF/S/K/MJ/D/T N MOS 1213 F-CellTM VDMOS TO-251J-3L3

 0.181. Size:321K  silan
svfp7n60cfjd.pdf

7N60
7N60

SVFP7N60CFJD 7A600V N 2SVFP7N60CFJD N MOS F-CellTM VDMOS 1 3

 0.182. Size:638K  silan
svs7n60fjd2 svs7n60dd2tr svs7n60fd2.pdf

7N60
7N60

SVS7N60F(FJ)(D)D2 7A, 600V DP MOS SVS7N60F(FJ)(D)D2 N MOSFET DP MOS SVS7N60F(FJ)(D)D2 / 7A,600

 0.183. Size:627K  silan
svf7n60t svf7n60f.pdf

7N60
7N60

SVF7N60T/F_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

 0.184. Size:729K  magnachip
mdp7n60th.pdf

7N60
7N60

MDP7N60 N-Channel MOSFET 600V, 7A, 1.15 General Description Features The MDP7N60 uses advanced MagnaChips MOSFET V = 600V DSTechnology, which provides low on-state resistance, high V = 660V @ T DS jmaxswitching performance and excellent quality. I = 7.0A @ V = 10V D GS RDS(ON) 1.15 @ VGS = 10V MDP7N60 is suitable device for SMPS, high Speed switching Applica

 0.185. Size:1118K  magnachip
mdf7n60bth mdp7n60bth.pdf

7N60
7N60

MDP7N60B / MDF7N60B N-Channel MOSFET 600V, 7.0A, 1.15 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- V = 660V @ T DS jmaxstate resistance, high switching performance and excellent I = 7.0A @ V = 10V D GSquality. RDS(ON) 1.15 @ VGS = 10V Applications These devices

 0.186. Size:367K  bruckewell
ms7n60.pdf

7N60
7N60

MS7N60 N-Channel Enhancement Mode Power MOSFET Description The MS7N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple

 0.187. Size:741K  bruckewell
msf7n60.pdf

7N60
7N60

MSF7N60 600V N-Channel MOSFET Description The MSF7N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirem

 0.188. Size:722K  winsemi
wff7n60.pdf

7N60
7N60

WFF7N60WFF7N60WFF7N60WFF7N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 7A,600V,R (Max 1.2)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 29nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC)ISO Maximum Junction Temperature Range(150)General Descri

 0.189. Size:652K  winsemi
wfp7n60.pdf

7N60
7N60

WFP7N60WFP7N60WFP7N60WFP7N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures7A,600V,R (Max 1.0)@V =10V DS(on) GS Ultra-low Gate Charge(Typical 29nC) Fast Switching Capability 100%Avalanche TestedIsolation Voltage(V =4000V AC) ISO Maximum Junction Temperature Range(150)General Descri

 0.190. Size:662K  winsemi
sff7n60.pdf

7N60
7N60

SFF7N60SFF7N60SFF7N60SFF7N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 7A,600V,R (Max 1.0)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 29nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC)ISO Maximum Junction Temperature Range(150)General Descri

 0.191. Size:466K  belling
blv7n60.pdf

7N60
7N60

BLV7N60 N-channel Enhancement Mode Power MOSFET 600V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 1.0 Simple Drive Requirements ID 7ADescription This advanced high voltage MOSFET is produced using Bellings proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless

 0.192. Size:3164K  citcorp
cs7n60fa9hdy.pdf

7N60
7N60

CS7N60FA9HDY600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability.0.189(4.80)0.173(4.40) Low gate charge.0.409(10.40)0.378(9.60) 0.114(2.90) Low reverse transfer capacitances.0.098(2.50) 100% single pulse avalanche energy test.0.638(16.20)0.606(15.40)Marking code Mechanical dataG D S E

 0.193. Size:2737K  citcorp
cs7n60fa9hd.pdf

7N60
7N60

CS7N60FA9HD600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability.0.189(4.80)0.173(4.40) Low gate charge.0.409(10.40)0.378(9.60) 0.114(2.90) Low reverse transfer capacitances.0.098(2.50) 100% single pulse avalanche energy test.0.638(16.20)0.606(15.40)Marking code Mechanical dataG D S Ep

 0.194. Size:105K  crownpo
ctm07n60.pdf

7N60
7N60

CTM07N60Crownpo TechnologyPower MOSFETFeaturesGeneral DescriptionRobust High Voltage TerminationThis high voltage MOSFET uses an advanced terminationAvalanche Energy Specifiedscheme to provide enhanced voltage-blocking capabilitySource-to-Drain Diode Recovery Time Comparable to awithout degrading performance over time. In addition, thisDiscrete Fast Recovery

 0.195. Size:1020K  feihonltd
fhp7n60a fhf7n60a.pdf

7N60
7N60

N N-CHANNEL MOSFET FHP7N60A /FHF7N60A MAIN CHARACTERISTICS FEATURES ID 7A Low gate charge VDSS 600V Crss ( 5.5pF) Low Crss (typical 5.5pF ) Rdson-typ @Vgs=10V 0.9 Fast switching Qg-typ 24nC 100% 100% avalanche tested dv/dt Impr

 0.196. Size:209K  foshan
cs7n60f.pdf

7N60
7N60

BRF7N60(CS7N60F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)

 0.197. Size:838K  jiaensemi
jfpc7n60c jffm7n60c.pdf

7N60
7N60

JFPC7N60C JFFM7N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 7A, 600V, RDS(on)typ. = 1.2@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, a

 0.198. Size:333K  kia
kia7n60u.pdf

7N60
7N60

7A600V7N60UN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThis Power MOSFETis produced using KIAsemi`s advancedplanar stripeDMOStechnology. Thisadvanced technology has been especially tailored to minimize on-state resistance, provide superiorswitching performance, and withstand high energy pulse in the avalanche and commutation mode. Th

 0.199. Size:270K  kia
kia7n60h.pdf

7N60
7N60

7.0A,600VN-CHANNELMOSFET7N60HKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThis Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology. Thisadvanced technology has been especially tailored to minimize on-state resistance, provide superiorswitching performance, and withstand high energy pulse in the avalanche and commutation mode. Th

 0.200. Size:360K  maple semi
slp7n60c slf7n60c.pdf

7N60
7N60

SLP7N60C / SLF7N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.0A, 600V, RDS(on)Typ. = 1.0@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 25nC)This advanced technology has been especially tailored to - High ruggednessminimize on-state resistance, provide superior switching - Fast switching

 0.201. Size:843K  samwin
swf7n60k swi7n60k.pdf

7N60
7N60

SW7N60K N-channel Enhanced mode TO-220F/TO-251MOSFET Features TO-220F TO-251 BVDSS : 600V High ruggedness ID : 7A Low RDS(ON) (Typ 0.5)@VGS=10V RDS(ON) : 0.5 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application: AdaptorLED 3 3 3 1. Gate 2. Drain 3. Source 1 General Descr

 0.202. Size:999K  samwin
sw7n60d swf7n60d swp7n60d swi7n60d swd7n60d.pdf

7N60
7N60

SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features TO-220F TO-220 TO-251 TO-252 BVDSS : 600V High ruggedness ID : 7A RDS(ON) (Typ 1.05)@VGS=10V RDS(ON) : 1.05 Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application:UPSInverter 3 3 3 3 TV

 0.203. Size:1026K  samwin
swf7n60d swp7n60d swi7n60d swd7n60d.pdf

7N60
7N60

SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features TO-220F TO-220 TO-251 TO-252 BVDSS : 600V High ruggedness ID : 7A Low RDS(ON) (Typ 1.05)@VGS=10V RDS(ON) : 1.05 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application:UPSInverter 3 3 3

 0.204. Size:582K  samwin
swt47n60k.pdf

7N60
7N60

SW47N60K N-channel Enhanced mode TO-247 MOSFET Features BVDSS : 600V TO-247 ID : 47A High ruggedness Low RDS(ON) (Typ 56m)@VGS=10V RDS(ON) :56m Low Gate Charge (Typ 152nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:Charger,LED,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power MO

 0.205. Size:608K  samwin
swd7n60k2f.pdf

7N60
7N60

SW7N60K2F N-channel Enhanced mode TO-252 MOSFET TO-252 BVDSS : 600V Features ID : 7A High ruggedness RDS(ON) : 0.43 Low RDS(ON) (Typ 0.43)@VGS=10V Low Gate Charge (Typ 13nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED , Adaptor, Charger 1. Gate 2. Drain 3. Source 3 General Description This pow

 0.206. Size:199K  sanrise-tech
srm7n60.pdf

7N60
7N60

Datasheet 7A, 600V, N-Channel Power MOSFET SRM7N60General Description Symbol The Sanrise SRM7N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM7N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high

 0.207. Size:443K  taitron
msu7n60f msu7n60t.pdf

7N60
7N60

600V/7.4A POWER MOSFET (N-Channel) MSU7N60 600V/7.4A Power MOSFET (N-Channel) General Description MSU7N60 is a N-Channel enhancement mode power MOSFET with advanced TO-220 technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commutati

 0.208. Size:457K  trinnotech
tmd7n60z tmu7n60z.pdf

7N60
7N60

TMD7N60Z(G)/TMU7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 7A

 0.209. Size:611K  trinnotech
tmp7n60z tmpf7n60z.pdf

7N60
7N60

TMP7N60Z(G)/TMPF7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 7A

 0.210. Size:1240K  truesemi
tsp7n60m tsf7n60m.pdf

7N60
7N60

TSP7N60M/TSF7N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 7.0A,600V,Max.RDS(on)=1.3 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 29nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and

 0.211. Size:348K  ubiq
qm07n60f.pdf

7N60
7N60

QM07N60F 1 2011-04-29 - 1 -N-Ch 600V Fast Switching MOSFETsGeneral Description Product SummeryThe QM07N60F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 600V 1.35 7Amost of the synchronous buck converterapplications . Applications The QM07N60F meet the RoHS and

 0.212. Size:662K  way-on
wmm07n60c4 wml07n60c4 wmo07n60c4 wmn07n60c4 wmp07n60c4 wmk07n60c4.pdf

7N60
7N60

WMM0 60C4, MO07N60C07N60C4, WML07N6 WM C4 WMN0 60C4, MK07N60C07N60C4, WMP07N6 WM C4 600V 0.96 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WM

 0.213. Size:326K  wuxi china
cs7n60fa9hd.pdf

7N60
7N60

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS7N60F A9HD General Description VDSS 600 V CS7N60F A9HD, the silicon N-channel Enhanced ID 7 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor

 0.214. Size:348K  wuxi china
cs7n60a7hd.pdf

7N60
7N60

Silicon N-Channel Power MOSFET R CS7N60 A7HD General Description VDSS 600 V CS7N60 A7HD, the silicon N-channel Enhanced ID 7 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.215. Size:352K  wuxi china
cs7n60a8hd.pdf

7N60
7N60

Silicon N-Channel Power MOSFET R CS7N60 A8HD General Description VDSS 600 V CS7N60 A8HD, the silicon N-channel Enhanced ID 7 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.217. Size:459K  convert
cs7n60cf cs7n60cp cs7n60cu cs7n60cd.pdf

7N60
7N60

nvertCS7N60CF,CS7N60CP,CS7N60CU,CS7N60CDSuzhou Convert Semiconductor Co ., Ltd.600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS7N60CF TO

 0.218. Size:646K  convert
cs7n60f cs7n60p.pdf

7N60
7N60

CS7N60F,CS7N60PnvertSuzhou Convert Semiconductor Co ., Ltd.600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS7N60F TO-220F CS7N60FCS7N60

 0.219. Size:777K  convert
csfr7n60f csfr7n60k csfr7n60d csfr7n60u.pdf

7N60
7N60

CSFR7N60F, CSFR7N60K, nvertSuzhou Convert Semiconductor Co ., Ltd.CSFR7N60D,CSFR7N60U600V N-Channel MOSFETFEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Motor Controls Power Factor Correction (PFC)Device Marking and Package

 0.220. Size:5294K  first semi
fir7n60fg.pdf

7N60
7N60

FIR7N60FGAdvanced N-Ch Power MOSFET-IGeneral Description PIN Connection TO-220FFIR7N60FG is an N-channel enhancement mode power MOS field effect transistor which is produced using proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior swit

 0.221. Size:866K  huake
smf7n60.pdf

7N60
7N60

SMF7N60600V N-Channnel MOSFETFeatures 7.0A, 600V, R =1.0@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Value

 0.222. Size:1036K  lonten
lnc7n60d lnd7n60d lng7n60d lnh7n60d.pdf

7N60
7N60

LNC7N60D\LND7N60D\LNG7N60D\LNH7N60D Lonten N-channel 600V, 7A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planar VDMOS technology. The ID 7A resulting device has low conduction resistance, RDS(on),max 1.3 superior switching performance and high avalance Qg,typ 20.6nC energy. Features Low RDS(on) Low gate cha

 0.223. Size:940K  lonten
lnc7n60 lnd7n60.pdf

7N60
7N60

LNC7N60\LND7N60 Lonten N-channel 600V, 7A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planar VDMOS technology. The ID 7A resulting device has low conduction resistance, RDS(on),max 1.3 superior switching performance and high avalance Qg,typ 20.6nC energy. Features Low RDS(on) Low gate charge (typ. Qg =20.6nC

 0.224. Size:1214K  cn super semi
ssw47n60s ssa47n60s.pdf

7N60
7N60

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power MOSFET SS*47N60S Rev. 1.3 Jun. 2019 www.supersemi.com.cn March, 2016 SJ-FET SSW47N60S/SSA47N60S 600V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism fo

 0.225. Size:1289K  cn super semi
ssw47n60sfd ssa47n60sfd.pdf

7N60
7N60

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power MOSFET With Fast-Recovery SS*47N60SFD Rev. 1.5 Jun. 2019 www.supersemi.com.cn March, 2016 SJ-FET SSW47N60SFD/SSA47N60SFD 600V N-Channel MOSFET With Fast-Recovery Description Features SJ-FET is new generation of high voltage MOSFET family that Mult

 0.226. Size:559K  cn wuxi unigroup
tma7n60h tmc7n60h tmd7n60h tmu7n60h.pdf

7N60
7N60

TMA7N60H, TMC7N60H, TMD7N60H, TMU7N60H Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TM

 0.227. Size:666K  cn hmsemi
hm7n60k hm7n60i.pdf

7N60
7N60

HM7N60K / HM7N60IHM7N60K / HM7N60I600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switchin

 0.228. Size:1052K  cn hmsemi
hms47n60a.pdf

7N60
7N60

HMS47N60AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 600 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON) MAX 70 m gate charge. This super junction MOSFET fits the industrys ID AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Fea

 0.229. Size:324K  cn hmsemi
hm7n60 hm7n60f.pdf

7N60
7N60

HM7N60 / HM7N60F600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switching Fast switchin

 0.230. Size:258K  inchange semiconductor
spb07n60c3.pdf

7N60
7N60

Isc N-Channel MOSFET Transistor SPB07N60C3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

 0.231. Size:243K  inchange semiconductor
spw47n60cfd.pdf

7N60
7N60

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPW47N60CFDISPW47N60CFDFEATURESStatic drain-source on-resistance:RDS(on)83mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Peak Current CapabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

 0.232. Size:244K  inchange semiconductor
spw47n60c3.pdf

7N60
7N60

isc N-Channel MOSFET Transistor SPW47N60C3ISPW47N60C3FEATURESStatic drain-source on-resistance:RDS(on)70mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved TransconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600

 0.233. Size:261K  inchange semiconductor
spu07n60c3.pdf

7N60
7N60

isc N-Channel MOSFET Transistor SPU07N60C3FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 0.234. Size:244K  inchange semiconductor
spd07n60s5.pdf

7N60
7N60

isc N-Channel MOSFET Transistor SPD07N60S5,ISPD07N60S5FEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600

 0.235. Size:252K  inchange semiconductor
aotf7n60.pdf

7N60
7N60

isc N-Channel MOSFET Transistor AOTF7N60FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 0.236. Size:213K  inchange semiconductor
fmw47n60s1hf.pdf

7N60
7N60

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FMW47N60S1HFFEATURESWith TO-247 packagingWith low gate drive requirementsLow switching lossLow on-state resistanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

 0.237. Size:376K  inchange semiconductor
apt47n60bc3.pdf

7N60
7N60

isc N-Channel MOSFET Transistor APT47N60BC3FEATURESDrain Current I =47A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.07(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 0.238. Size:247K  inchange semiconductor
spp07n60cfd.pdf

7N60
7N60

isc N-Channel MOSFET Transistor SPP07N60CFDISPP07N60CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.7Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

 0.239. Size:252K  inchange semiconductor
aotf7n60fd.pdf

7N60
7N60

isc N-Channel MOSFET Transistor AOTF7N60FDFEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =1.45(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 0.240. Size:258K  inchange semiconductor
spb07n60s5.pdf

7N60
7N60

Isc N-Channel MOSFET Transistor SPB07N60S5FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

 0.241. Size:201K  inchange semiconductor
spa07n60cfd.pdf

7N60
7N60

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPA07N60CFDFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 0.242. Size:289K  inchange semiconductor
mdp7n60th.pdf

7N60
7N60

isc N-Channel MOSFET Transistor MDP7N60THFEATURESDrain Current : I = 7A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.15(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 0.243. Size:261K  inchange semiconductor
spu07n60s5.pdf

7N60
7N60

isc N-Channel MOSFET Transistor SPU07N60S5FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 0.244. Size:261K  inchange semiconductor
aot7n60.pdf

7N60
7N60

isc N-Channel MOSFET Transistor AOT7N60FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 0.245. Size:248K  inchange semiconductor
spp07n60c3.pdf

7N60
7N60

isc N-Channel MOSFET Transistor SPP07N60C3ISPP07N60C3FEATURESStatic drain-source on-resistance:RDS(on) 0.6Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityImproved transconductanceABSOLUTE MA

 0.246. Size:376K  inchange semiconductor
apt77n60bc6.pdf

7N60
7N60

isc N-Channel MOSFET Transistor APT77N60BC6FEATURESDrain Current I =77A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.041(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 0.247. Size:274K  inchange semiconductor
aoi7n60.pdf

7N60
7N60

isc N-Channel MOSFET Transistor AOI7N60FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =1.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 0.248. Size:261K  inchange semiconductor
sihg47n60aef.pdf

7N60
7N60

isc N-Channel MOSFET Transistor SIHG47N60AEFFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

 0.249. Size:211K  inchange semiconductor
17n60.pdf

7N60
7N60

isc N-Channel MOSFET Transistor 17N60FEATURESDrain Current I = 17A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.45(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch mode power supply.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

 0.250. Size:401K  inchange semiconductor
irfp27n60k.pdf

7N60
7N60

iscN-Channel MOSFET Transistor IRFP27N60KFEATURESLow drain-source on-resistance:RDS(ON) =0.22 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

 0.251. Size:258K  inchange semiconductor
fmh47n60s1fd.pdf

7N60
7N60

isc N-Channel MOSFET Transistor FMH47N60S1FDFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drai

 0.252. Size:265K  inchange semiconductor
aod7n60.pdf

7N60
7N60

isc N-Channel MOSFET Transistor AOD7N60FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =1.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 0.253. Size:252K  inchange semiconductor
fdpf7n60nz.pdf

7N60
7N60

isc N-Channel MOSFET Transistor FDPF7N60NZFEATURESDrain Current I = 6.5A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.25(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

 0.254. Size:201K  inchange semiconductor
sss7n60b.pdf

7N60
7N60

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SSS7N60BFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25)

 0.255. Size:247K  inchange semiconductor
spp07n60s5.pdf

7N60
7N60

isc N-Channel MOSFET Transistor SPP07N60S5ISPP07N60S5FEATURESStatic drain-source on-resistance:RDS(on) 0.6Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityImproved transconductanceABSOLUTE MA

 0.256. Size:245K  inchange semiconductor
spd07n60c3.pdf

7N60
7N60

isc N-Channel MOSFET Transistor SPD07N60C3,ISPD07N60C3FEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

 0.257. Size:288K  inchange semiconductor
fdd7n60nz.pdf

7N60
7N60

isc N-Channel MOSFET Transistor FDD7N60NZFEATURESDrain Current : I =5.5A@ T =25D CDrain Source Voltage: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =1.25(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 0.258. Size:540K  chongqing pingwei
7n60gs 7n60ds.pdf

7N60
7N60

7N60(G,D)S7 Amps,600 Volts N-Channel Super Junction Power MOSFETFEATURE 7A,600V,R =0.58@V =10V/3.5ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability Integrated ESD protection diodeTO-252 TO-2517N60GS 7N60DSAbsolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol UNIT7N60

 0.259. Size:488K  chongqing pingwei
47n60ys.pdf

7N60
7N60

47N60YS47 Amps,600 Volts N-Channel Super Junction Power MOSFETFEATURETO-247 47A,600V,R =90m@V =10V/15.6ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capabilityAbsolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol UNIT47N60YSDrain-Source Voltage V 600DSSVGate-Source Voltage

 0.260. Size:542K  chongqing pingwei
7n60tf.pdf

7N60
7N60

7N60TF7 Amps,600 Volts N-CHANNEL Power MOSFETFEATURETO-220TF 7A,600V,R =1.3@V =10V/3.5ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capabilityAbsolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol UNIT7N60TFDrain-Source Voltage V 600DSSVGate-Source Voltage V 30GSSCont

Другие MOSFET... CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BS170 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
Back to Top