All MOSFET. 7N60 Datasheet

 

7N60 MOSFET. Datasheet pdf. Equivalent

Type Designator: 7N60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 142 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7.4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 180 nS

Drain-Source Capacitance (Cd): 125 pF

Maximum Drain-Source On-State Resistance (Rds): 0.83 Ohm

Package: TO-220_TO-220F_TO-220F1_TO-220F2_TO-262_TO-263

7N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

7N60 Datasheet (PDF)

1.1. fch47n60 f133.pdf Size:286K _upd-mosfet

7N60
7N60

February TM SuperFET FCH47N60_F133 Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.058Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=210nC) lower gate charge performance. This advanced technology has

1.2. fcpf7n60t fcpf7n60ydtu.pdf Size:1228K _upd-mosfet

7N60
7N60

December 2008 TM SuperFET FCP7N60/FCPF7N60/FCPF7N60YDTU Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.53Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=25nC) lower gate charge performance. This advan

 1.3. fdd7n60nztm.pdf Size:663K _upd-mosfet

7N60
7N60

November 2013 FDD7N60NZ / FDU7N60NZTU N-Channel UniFETTM II MOSFET 600 V, 5.5 A, 1.25 Ω Features Description • RDS(on) = 1.05 Ω (Typ.) @ VGS = 10 V, ID = 2.75 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS • Low Gate Charge (Typ. 13 nC) technology. This advanced MOSFET family has the smallest on- • Low Crs

1.4. irfp27n60k irfp27n60kpbf.pdf Size:183K _upd-mosfet

7N60
7N60

IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ()VGS = 10 V 0.18 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 56 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 86 and Current Co

 1.5. fcu7n60tu.pdf Size:969K _upd-mosfet

7N60
7N60

December 2008 TM SuperFET FCD7N60 / FCU7N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.53Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=23nC) lower gate charge performan

1.6. mgp7n60ed.pdf Size:148K _motorola

7N60
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP7N60ED/D Designer's? Data Sheet MGP7N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode NChannel EnhancementMode Silicon Gate IGBT & DIODE IN TO220 7.0 A @ 90C This Insulated Gate Bipolar Transistor (IGBT) is copackaged 10 A @ 25C with a soft recovery ultrafast rectifier and uses an advanced 600 VOLTS

1.7. mgp7n60erev0.pdf Size:122K _motorola

7N60
7N60

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP7N60E/D Designer's? Data Sheet MGP7N60E Insulated Gate Bipolar Transistor NChannel EnhancementMode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO220 termination scheme to provide an enhanced and reliable high 9.0 A @ 90C voltageblocking capability. Its new 600 V IGBT technology

1.8. mgp7n60e.pdf Size:122K _motorola

7N60
7N60

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP7N60E/D Designer's? Data Sheet MGP7N60E Insulated Gate Bipolar Transistor NChannel EnhancementMode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO220 termination scheme to provide an enhanced and reliable high 7.0 A @ 90C voltageblocking capability. Its new 600 V IGBT technology

1.9. phx7n60e.pdf Size:75K _philips2

7N60
7N60

Philips Semiconductors Product specification PowerMOS transistors PHX7N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 600 V • Stable off-state characteristics • High thermal cycling performance ID = 3.6 A g • Isolated package RDS(ON) ≤ 1.2 Ω s GENERAL DESCRIPTION PINNING SOT186A N-channel, enh

1.10. phw7n60 1.pdf Size:55K _philips2

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Philips Semiconductors Product specification PowerMOS transistor PHW7N60 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 600 V avalanche energy capability, stable ID Drain current (DC) 7 A off-state characteristics, fast Ptot Total power dissipation 14

1.11. php7n60e phb7n60e phw7n60e.pdf Size:91K _philips2

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Philips Semiconductors Product specification PowerMOS transistors PHP7N60E, PHB7N60E, PHW7N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 600 V • Stable off-state characteristics • High thermal cycling performance ID = 7 A g • Low thermal resistance RDS(ON) ≤ 1.2 Ω s GENERAL DESCRIPTION N-chan

1.12. fdu7n60nztu.pdf Size:663K _fairchild_semi

7N60
7N60

November 2013 FDD7N60NZ / FDU7N60NZTU N-Channel UniFETTM II MOSFET 600 V, 5.5 A, 1.25 Ω Features Description • RDS(on) = 1.05 Ω (Typ.) @ VGS = 10 V, ID = 2.75 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS • Low Gate Charge (Typ. 13 nC) technology. This advanced MOSFET family has the smallest on- • Low Crs

1.13. hgtp7n60a4 hgtg7n60a4 hgt1s7n60a4.pdf Size:173K _fairchild_semi

7N60
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HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 >100kHz Operation at 390V, 7A are MOS gated high voltage switching devices combining 200kHz Operation at 390V, 5A the best features of MOSFETs and bipolar transistors. These 600V Switching SOA Capability devices have the high i

1.14. fch47n60f.pdf Size:197K _fairchild_semi

7N60
7N60

February TM SuperFET FCH47N60F _F133 600V N-Channel MOSFET Features Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.062? balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 240ns) lower gate charge performance. Ultra Low Gate Cha

1.15. hgtd7n60c3s hgtp7n60c3.pdf Size:161K _fairchild_semi

7N60
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HGTD7N60C3S, HGTP7N60C3 Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated 14A, 600V at TC = 25oC high voltage switching devices combining the best features 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC h

1.16. fqpf7n60.pdf Size:604K _fairchild_semi

7N60
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April 2000 TM QFET QFET QFET QFET FQPF7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.3A, 600V, RDS(on) = 1.0? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 16 pF) This advanced technology has been especially tail

1.17. fch47n60f f085.pdf Size:382K _fairchild_semi

7N60
7N60

October 2013 FCH47N60F_F085 N-Channel MOSFET 600V, 47A, 75mΩ D Features Typ rDS(on) = 66mΩ at VGS = 10V, ID = 47A Typ Qg(tot) = 190nC at VGS = 10V, ID = 47A G UIS Capability RoHS Compliant TO-247 Qualified to AEC Q101 G S D S Description SuperFETTM is Fairchild’s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance For curren

1.18. hgt1s7n60c3ds hgtp7n60c3d.pdf Size:557K _fairchild_semi

7N60
7N60

September 2005 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and 14A, 600V at TC = 25oC HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These devices have

1.19. fcp7n60n fcpf7n60nt.pdf Size:787K _fairchild_semi

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December 2009 SupreMOSTM FCP7N60N / FCPF7N60NT N-Channel MOSFET 600V, 6.8A, 0.52? Features Description RDS(on) = 0.46? ( Typ.) @ VGS = 10V, ID = 3.4A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 17.8nC) process that differentiates it from preceding multi-epi based technologie

1.20. fch47n60.pdf Size:286K _fairchild_semi

7N60
7N60

February TM SuperFET FCH47N60_F133 Features Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.058? balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=210nC) lower gate charge performance. This advanced technology has been tailored

1.21. fdd7n60nz.pdf Size:663K _fairchild_semi

7N60
7N60

November 2013 FDD7N60NZ / FDU7N60NZTU N-Channel UniFETTM II MOSFET 600 V, 5.5 A, 1.25 Ω Features Description • RDS(on) = 1.05 Ω (Typ.) @ VGS = 10 V, ID = 2.75 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS • Low Gate Charge (Typ. 13 nC) technology. This advanced MOSFET family has the smallest on- • Low Crs

1.22. fcp7n60 fcpf7n60 fcpf7n60ydtu.pdf Size:1228K _fairchild_semi

7N60
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December 2008 TM SuperFET FCP7N60/FCPF7N60/FCPF7N60YDTU Features Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.53? balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=25nC) lower gate charge performance. This advanced technolog

1.23. fci7n60.pdf Size:932K _fairchild_semi

7N60
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December 2008 TM SuperFET FCI7N60 600V N-Channel MOSFET Features Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.53? balance mechanism for outstanding low on-resistance and Ultra Low Gate Charge (typ. Qg = 25nC) lower gate charge performance. Low Effective O

1.24. fch47n60n.pdf Size:599K _fairchild_semi

7N60
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May 2010 SupreMOSTM FCH47N60N N-Channel MOSFET 600V, 47A, 62m? Features Description RDS(on) = 51.5m? ( Typ.)@ VGS = 10V, ID =23.5 A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg =115nC) process that differentiates it from preceding multi-epi based technologies. By utilizing thi

1.25. fch47n60 f085.pdf Size:381K _fairchild_semi

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November 2013 FCH47N60_F085 N-Channel MOSFET 600V, 47A, 79mΩ D Features Typ rDS(on) = 64mΩ at VGS = 10V, ID = 47A Typ Qg(tot) = 187nC at VGS = 10V, ID = 47A G UIS Capability RoHS Compliant TO-247 Qualified to AEC Q101 G S D S Description SuperFETTM is Fairchild’s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance For curren

1.26. fch47n60nf.pdf Size:295K _fairchild_semi

7N60
7N60

January 2011 SupreMOSTM FCH47N60NF N-Channel MOSFET, FRFET 600V, 47A, 65m? Features Description RDS(on) = 57.5m? (Typ.) @ VGS = 10V, ID = 23.5A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge (Typ. Qg = 121nC) process that differentiates it from preceding multi-epi based technologies. By

1.27. ssp7n60b sss7n60b.pdf Size:921K _fairchild_semi

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SSP7N60B/SSS7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 38 nC) planar, DMOS technology. • Low Crss ( typical 23 pF) This advanced technology has been especially tailored to • Fast switchi

1.28. fdp7n60nz fdpf7n60nz.pdf Size:280K _fairchild_semi

7N60
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September 2010 UniFET-II TM FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET? 600V, 6.5A, 1.25? Features Description RDS(on) = 1.05? ( Typ.)@ VGS = 10V, ID = 3.25A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 13nC) DOMS technology. Low Crss ( Typ. 7pF) This advance technology has been es

1.29. fca47n60f.pdf Size:191K _fairchild_semi

7N60
7N60

January 2009 TM SuperFET FCA47N60F 600V N-Channel MOSFET, FRFET Features Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.062? balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 240ns) lower gate charge performance. Ultra Low G

1.30. fch47n60 f133 fca47n60 fca47n60 f109.pdf Size:1062K _fairchild_semi

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December 2008 TM SuperFET FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Features Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.058? balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=210nC) lower gate charge

1.31. hgtp7n60b3d hgt1s7n60b3d.pdf Size:497K _fairchild_semi

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HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features with Anti-Parallel Hyperfast Diode 14A, 600V, TC = 25oC The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated 600V Switching SOA Capability high voltage switching devices combining the best features Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150oC of MOSFETs and bipolar

1.32. fcd7n60 fcu7n60.pdf Size:1005K _fairchild_semi

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December 2008 TM SuperFET FCD7N60 / FCU7N60 600V N-Channel MOSFET Features Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.53? balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=23nC) lower gate charge performance. This adv

1.33. fqb7n60 fqi7n60.pdf Size:651K _fairchild_semi

7N60
7N60

October 2008 QFET FQB7N60 / FQI7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 16 pF) This advanced technology has been especially tailored to

1.34. fdp17n60n fdpf17n60nt.pdf Size:761K _fairchild_semi

7N60
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July 2009 UniFETTM FDP17N60N / FDPF17N60NT N-Channel MOSFET 600V, 17A, 0.34? Features Description RDS(on) = 0.29? ( Typ.)@ VGS = 10V, ID = 8.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 48nC) stripe, DMOS technology. Low Crss ( Typ. 23pF) This advanced technology has been especially

1.35. irfp27n60kpbf.pdf Size:615K _international_rectifier

7N60
7N60

PD - 95479A SMPS MOSFET IRFP27N60KPbF HEXFET Power MOSFET Applications l Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 600V 180m? 27A l High Speed Power Switching l Motor Drive l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Rugge

1.36. irfp27n60k.pdf Size:91K _international_rectifier

7N60
7N60

PD - 94407 SMPS MOSFET IRFP27N60K HEXFET Power MOSFET Applications Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 600V 180m? 27A High Speed Power Switching Motor Drive Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characteri

1.37. irfb17n60k.pdf Size:486K _international_rectifier

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PD - 95629 IRFB17N60KPbF Lead-Free 8/4/04 Document Number: 91099 www.vishay.com 1 IRFB17N60KPbF Document Number: 91099 www.vishay.com 2 IRFB17N60KPbF Document Number: 91099 www.vishay.com 3 IRFB17N60KPbF Document Number: 91099 www.vishay.com 4 IRFB17N60KPbF Document Number: 91099 www.vishay.com 5 IRFB17N60KPbF Document Number: 91099 www.vishay.com 6 IRFB17N60KPbF Docu

1.38. ssh17n60a.pdf Size:944K _samsung

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Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 0.45 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 0.356 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Unit

1.39. ssw7n60a.pdf Size:505K _samsung

7N60
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Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 1.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V 2 Lower RDS(ON) : 0.977 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristi

1.40. sss7n60a.pdf Size:504K _samsung

7N60
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Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 1.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 0.977 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

1.41. ssp7n60a.pdf Size:581K _samsung

7N60
7N60

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 1.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 0.977 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

1.42. ssh7n60a.pdf Size:912K _samsung

7N60
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Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 1.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 7.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 0.977 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Unit

1.43. irfp27n60k sihfp27n60k.pdf Size:179K _vishay

7N60
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IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) (?)VGS = 10 V 0.18 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 56 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 86 and Current Configuration

1.44. sihg47n60s.pdf Size:168K _vishay

7N60
7N60

1.45. spp07n60cfd rev1.4.pdf Size:568K _infineon

7N60
7N60

SPP07N60CFD CoolMOSTM Power Transistor Product Summary Features V @Tjmax 650 V DS Intrinsic fast-recovery body diode R 0.7 DS(on),max Extremely low reverse recovery charge I 6.6 A D Ultra low gate charge Extreme dv /dt rated PG-TO220 High peak current capability Qualified for industrial grade applications according to JEDEC1) CoolMOS CFD designed for: Soft switching

1.46. spp07n60c3 spa07n60c3 spi07n60c3 rev.3.2.pdf Size:620K _infineon

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SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.6 ? New revolutionary high voltage technology ID 7.3 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated 3 High peak current capability 2 3 2 1 1 P-TO220-3-31 Improved transconductance P-TO220-3-1 PG-TO-220-3-31;-3-111:

1.47. spa07n60cfd rev1.0.pdf Size:586K _infineon

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SPA07N60CFD C??IMOSTM $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features V 1jmax 650 V DS V &CIG>CH>8 ;6HI G:8DK:GN 7D9N 9>D9: R 0.7 DS(on) max V "MIG:B:AN ADL G:K:GH: G:8DK:GN 8=6G<: I 6.6 A D V 2 AIG6 ADL <6I: 8=6G<: V "MIG:B: 9v /dt G6I:9 -$ 1, #- V %><= E:6@ 8JGG:CI 86E67>A>IN V . J6A>;>:9 for industrial grade applications 688DG9>C< ID '"!" ;;8!#& 01>53:10 2;= V 0D;I HL>I8=>C< -4* 0

1.48. spd07n60s5 spu07n60s5 rev.2.5.pdf Size:888K _infineon

7N60
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SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.6 ? New revolutionary high voltage technology ID 7.3 A Worldwide best RDS(on) in TO-251 and TO-252 PG-TO252 PG-TO251 Ultra low gate charge Periodic avalanche rated 2 3 Extreme dv/dt rated 3 1 2 1 Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marki

1.49. spb07n60s5 rev.2.3.pdf Size:646K _infineon

7N60
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SPB07N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.6 ? New revolutionary high voltage technology ID 7.3 A PG-TO263 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking 07N60S5 SPB07N60S5 PG-TO263 Q67040-S4185 Maximum Ratings Parameter Symbol Value

1.50. spd07n60c3 spu07n60c3 rev.2.5.pdf Size:975K _infineon

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VDS Tjmax ? G G G

1.51. spw07n60cfd rev1[1].2 pcn.pdf Size:667K _infineon

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SPW07N60CFD TM C??IMOSTM #:A0< &<,9=4=>:< #<:/?.> %?88,CH>8 ;6HI G:8DK:GN 7D9N 9>D9: R 0.7 DS(on) max V "MIG:B:AN ADL G:K:GH: G:8DK:GN 8=6G<: I 6.6 A D V 2 AIG6 ADL <6I: 8=6G<: V "MIG:B: 9v /dt G6I:9 /d PG?TO247 V %><= E:6@ 8JGG:CI 86E67>A>IN V . J6A>;>:9 688DG9>C< ID '"!" ::7 "% /0=4290/ 1:< V 0D;I HL>I8=>C< -4* 0I6<:H V ) ! / 1 13 T

1.52. spp07n60s5 spi07n60s5 rev.2.7.pdf Size:528K _infineon

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SPP07N60S5 SPI07N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.6 ? New revolutionary high voltage technology ID 7.3 A Worldwide best RDS(on) in TO 220 PG-TO262 PG-TO220 Ultra low gate charge 2 Periodic avalanche rated Extreme dv/dt rated 3 2 1 Ultra low effective capacitances P-TO220-3-1 Improved transconductance Type Package Ordering Code Marking

1.53. spw47n60cfd rev1[1].3 pcn.pdf Size:616K _infineon

7N60
7N60

SPW47N60CFD TM C??IMOSTM "9@/; %;+8<3<=9; ";9.>-= $>77+;B Features V - R (7H C7GA>FE;A@3CJ :;9: GA>E397 E75:@A>A9J DS(on) max R $@EC;@D;5 83DE C75AG7CJ 4A6J 6;A67 46 A 46 D R IEC7?7>J >AH C7G7CD7 C75AG7CJ 5:3C97 R / >EC3 >AH 93E7 5:3C97 PG?TO247 R IEC7?7 6v /dt C3E76 /d R #;9: B73= 5FCC7@E 53B34;>;EJ R *7C;A6;5 3G3>3@5:7 C3E76 R + F3>;8;76 355AC6;@9 EA % R *4 8C77 >736 B>

1.54. spb07n60c3 rev.2.5.pdf Size:1389K _infineon

7N60
7N60

SPB07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.6 ? New revolutionary high voltage technology ID 7.3 A Ultra low gate charge PG-TO263 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance Type Package Ordering Code Marking SPB07N60C3 PG-TO263 Q67040-S4394 07N60C3 Maximum Ratings Parameter Symbol Val

1.55. spw47n60c3 rev[1].2.6 pcn.pdf Size:828K _infineon

7N60
7N60

VDS Tjmax ? G G

1.56. ixga7n60c ixgp7n60c.pdf Size:65K _ixys

7N60
7N60

VCES = 600 V IXGA 7N60C HiPerFASTTM IGBT IC25 = 14 A IXGP 7N60C LightspeedTM Series VCE(sat) = 2.7 V tfi = 45 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V G C E VGES Continuous 20 V VGEM Transient 30 V TO-263 AA (IXGA) IC25 TC = 25C 14 A IC90 TC = 90C 7 A ICM TC = 25C, 1 ms 30 A G C (TAB)

1.57. ixta7n60p ixtp7n60p.pdf Size:182K _ixys

7N60
7N60

VDSS = 600 V IXTA 7N60P PolarHVTM ID25 = 7 A IXTP 7N60P Power MOSFET ? ? RDS(on) ? 1.1 ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 175 C 600 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 600 V VGS Continuous 30 V (TAB) G VGSM Transient 40 V D S ID25 TC = 25 C7 A TO-263 (IXTA) IDM TC = 25 C,

1.58. ixga7n60b ixgp7n60b.pdf Size:70K _ixys

7N60
7N60

VCES = 600 V HiPerFASTTM IGBT IXGA 7N60B IC25 = 14 A IXGP 7N60B VCE(sat) = 2 V tfi = 150 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V G C E VGES Continuous 20 V VGEM Transient 30 V TO-263 AA (IXGA) IC25 TC = 25C 14 A IC90 TC = 90C 7 A ICM TC = 25C, 1 ms 30 A G C (TAB) E SSOA VGE = 15 V, T

1.59. ixfa7n60p3 ixfp7n60p3.pdf Size:159K _ixys

7N60
7N60

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA7N60P3 Power MOSFETs ID25 = 7A IXFP7N60P3 ≤ Ω RDS(on) ≤ Ω ≤ 1.15Ω ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25°C to 150°C 600 V D (Tab) VDGR TJ = 25°C to 150°C, RGS = 1MΩ 600 V TO-220AB

1.60. 7n60.pdf Size:335K _utc

7N60
7N60

UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

1.61. 7n60a.pdf Size:260K _utc

7N60
7N60

UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well suited

1.62. 7n60z.pdf Size:180K _utc

7N60
7N60

UNISONIC TECHNOLOGIES CO., LTD 7N60Z Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET 1 TO-220 ? DESCRIPTION The UTC 7N60Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche 1 TO-220F1 characteristics. This power MOSFET is usually used in high speed switchin

1.63. 7n60k.pdf Size:259K _utc

7N60
7N60

UNISONIC TECHNOLOGIES CO., LTD 7N60K Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 7N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

1.64. apt77n60jc3.pdf Size:175K _apt

7N60
7N60

APT77N60JC3 Ω 600V 77A 0.035Ω Ω Ω Ω Super Junction MOSFET COOLMOS Power Semiconductors • Ultra low RDS(ON) "UL Recognized" • Low Miller Capacitance ISOTOP® • Ultra Low Gate Charge, Qg D • Avalanche Energy Rated • N-Channel Enhancement Mode G • Popular SOT-227 Package S MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter

1.65. apt47n60bc3.pdf Size:168K _apt

7N60
7N60

APT47N60BC3 APT47N60SC3 Ω 600V 47A 0.070Ω Ω Ω Ω Super Junction MOSFET D3PAK TO-247 COOLMOS Power Semiconductors • Ultra low RDS(ON) • Low Miller Capacitance D • Ultra Low Gate Charge, Qg • Avalanche Energy Rated G • TO-247 or Surface Mount D3PAK Package S MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT47N60BC3_SC3

1.66. hgtp7n60.pdf Size:260K _harris_semi

7N60
7N60

HGTP7N60C3D, HGT1S7N60C3D, S E M I C O N D U C T O R HGT1S7N60C3DS 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Features Packaging JEDEC TO-220AB 14A, 600V at TC = +25oC EMITTER COLLECTOR 600V Switching SOA Capability GATE Typical Fall Time - 140ns at TJ = +150oC Short Circuit Rating COLLECTOR (FLANGE) Low Conduction Loss Hyperfast A

1.67. hgtd7n60.pdf Size:222K _harris_semi

7N60
7N60

HGTD7N60C3, S E M I C O N D U C T O R HGTD7N60C3S, HGTP7N60C3 14A, 600V, UFS Series N-Channel IGBT June 1996 Features Packaging JEDEC TO-220AB 14A, 600V at TC = +25oC COLLECTOR EMITTER 600V Switching SOA Capability GATE Typical Fall Time - 140ns at TJ = +150oC Short Circuit Rating Low Conduction Loss COLLECTOR (FLANGE) Description JEDEC TO-251AA The HGTD7N60C3, HGTD7N60C3

1.68. kf7n60p-f.pdf Size:93K _kec

7N60
7N60

KF7N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF7N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G _ correction and switching mode power supplie

1.69. 7n60.pdf Size:245K _inchange_semiconductor

7N60
7N60

INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet Transistor 7N60 ·FEATURES ·Drain Current –ID= 7A@ TC=25? ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0?(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high efficiency switch mode power supply.

1.70. ixga7n60bd1.pdf Size:77K _igbt

7N60
7N60

Advanced Technical Information IXGA 7N60BD1 VCES = 600 V HiPerFASTTM IGBT IXGP 7N60BD1 IC25 = 14 A with Diode VCE(sat) = 2.0 V tfi = 150ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V G C E VGEM Transient ±30 V IC25 TC = 25°C 14 A TO-263 AA (IXGA) IC90 TC = 90°C 7

1.71. ixga7n60cd1.pdf Size:89K _igbt

7N60
7N60

IXGA 7N60CD1 VCES = 600 V HiPerFASTTM IGBT IXGP 7N60CD1 IC25 = 14 A with Diode VCE(sat)typ = 2.0 V LightspeedTM Series tfi = 45 ns Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V G C E VGEM Transient ±30 V IC25 TC = 25°C 14 A TO-263 AA (IXGA) IC90 TC

1.72. ixgp7n60c.pdf Size:63K _igbt

7N60
7N60

VCES = 600 V IXGA 7N60C HiPerFASTTM IGBT IC25 = 14 A IXGP 7N60C LightspeedTM Series VCE(sat) = 2.7 V tfi = 45 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G C E VGES Continuous ±20 V VGEM Transient ±30 V TO-263 AA (IXGA) IC25 TC = 25°C 14 A IC90 TC = 90°C 7 A ICM TC = 25°C, 1 ms 30

1.73. ixga7n60c.pdf Size:66K _igbt

7N60
7N60

VCES = 600 V IXGA 7N60C HiPerFASTTM IGBT IC25 = 14 A IXGP 7N60C LightspeedTM Series VCE(sat) = 2.7 V tfi = 45 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G C E VGES Continuous ±20 V VGEM Transient ±30 V TO-263 AA (IXGA) IC25 TC = 25°C 14 A IC90 TC = 90°C 7 A ICM TC = 25°C, 1 ms 30

1.74. ixgp7n60bd1.pdf Size:77K _igbt

7N60
7N60

Advanced Technical Information IXGA 7N60BD1 VCES = 600 V HiPerFASTTM IGBT IXGP 7N60BD1 IC25 = 14 A with Diode VCE(sat) = 2.0 V tfi = 150ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V G C E VGEM Transient ±30 V IC25 TC = 25°C 14 A TO-263 AA (IXGA) IC90 TC = 90°C 7

1.75. ixga7n60b.pdf Size:68K _igbt

7N60
7N60

VCES = 600 V HiPerFASTTM IGBT IXGA 7N60B IC25 = 14 A IXGP 7N60B VCE(sat) = 2 V tfi = 150 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G C E VGES Continuous ±20 V VGEM Transient ±30 V TO-263 AA (IXGA) IC25 TC = 25°C 14 A IC90 TC = 90°C 7 A ICM TC = 25°C, 1 ms 30 A G C (TAB) E SSOA

1.76. ixgp7n60b.pdf Size:68K _igbt

7N60
7N60

VCES = 600 V HiPerFASTTM IGBT IXGA 7N60B IC25 = 14 A IXGP 7N60B VCE(sat) = 2 V tfi = 150 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G C E VGES Continuous ±20 V VGEM Transient ±30 V TO-263 AA (IXGA) IC25 TC = 25°C 14 A IC90 TC = 90°C 7 A ICM TC = 25°C, 1 ms 30 A G C (TAB) E SSOA

1.77. ixgp7n60cd1.pdf Size:89K _igbt

7N60
7N60

IXGA 7N60CD1 VCES = 600 V HiPerFASTTM IGBT IXGP 7N60CD1 IC25 = 14 A with Diode VCE(sat)typ = 2.0 V LightspeedTM Series tfi = 45 ns Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V G C E VGEM Transient ±30 V IC25 TC = 25°C 14 A TO-263 AA (IXGA) IC90 TC

1.78. wnm07n60-f.pdf Size:1752K _willsemi

7N60
7N60

WNM07N60/WNM07N60F WNM07N60/WNM07N60F 600V N-Channel MOSFET Description Features °C The WNM07N60/WNM07N60F is N-Channel  600V@TJ=25 enhancement MOS Field Effect Transistor. Uses  Typ.RDS(on)=1.0 Ω advanced high voltage MOSFET Process and  Low gate charge design to provide excellent RDS (ON) with low gate  100% avalanche tested charge. This device is suitable for use in p

1.79. h07n60.pdf Size:79K _hsmc

7N60
7N60

Spec. No. : MOS200604 HI-SINCERITY Issued Date : 2006.02.01 Revised Date : 2006.02.07 MICROELECTRONICS CORP. Page No. : 1/5 H07N60 Series Pin Assignment H07N60 Series Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: Source This high voltage MOSFET uses an advanced termination scheme t

1.80. aotf7n60fd.pdf Size:339K _aosemi

7N60
7N60

AOTF7N60FD 600V, 7A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary VDS 700V@150℃ The AOTF7N60FD has been fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 7A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) < 1.45Ω popular AC-DC applications. By providing low RDS(on), Ciss and Cr

1.81. aoi7n60.pdf Size:387K _aosemi

7N60
7N60

AOD7N60/AOI7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOD7N60 & AOI7N60 have been fabricated using an advanced high voltage MOSFET process that is designed VDS 700V@150℃ to deliver high levels of performance and robustness in ID (at VGS=10V) 7A popular AC-DC applications. RDS(ON) (at VGS=10V) < 1.3Ω By providing low RDS(on), Ciss and Crss along with

1.82. aot7n60.pdf Size:498K _aosemi

7N60
7N60

AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 7A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1.2Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along wit

1.83. aod7n60.pdf Size:387K _aosemi

7N60
7N60

AOD7N60/AOI7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOD7N60 & AOI7N60 have been fabricated using an advanced high voltage MOSFET process that is designed VDS 700V@150℃ to deliver high levels of performance and robustness in ID (at VGS=10V) 7A popular AC-DC applications. RDS(ON) (at VGS=10V) < 1.3Ω By providing low RDS(on), Ciss and Crss along with

1.84. aotf7n60.pdf Size:498K _aosemi

7N60
7N60

AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 7A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1.2Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along wit

1.85. ftp07n60 fta07n60.pdf Size:661K _ark-micro

7N60
7N60

FTP07N60/FT A07N60 600V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features  Low ON Resistance 600V 1.1Ω 7.0A  Low Gate Charge (typical 38.6nC)  Fast Switching  100% Avalanche Tested  RoHS Compliant  Halogen-free available Applications  High Efficiency SMPS  Adaptor/Charger  Active PFC  LCD Panel Power Ordering Information

1.86. sif7n60c.pdf Size:348K _sisemi

7N60
7N60

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET SIF7N60C N- MOS / N-CHANNEL POWER MOSFET SIF7N60C N

1.87. sif7n60d.pdf Size:348K _sisemi

7N60
7N60

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET SIF7N60D N- MOS / N-CHANNEL POWER MOSFET SIF7N60D N

1.88. mtn7n60e3.pdf Size:238K _cystek

7N60
7N60

Spec. No. : C409E3 Issued Date : 2011.12.20 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 1.08Ω(typ.) MTN7N60E3 ID : 7A Description The MTN7N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance an

1.89. mtn7n60fp.pdf Size:277K _cystek

7N60
7N60

Spec. No. : C409FP Issued Date : 2008.09.02 CYStech Electronics Corp. Revised Date : 2011.03.29 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 1.08Ω(typ.) MTN7N60FP ID : 7A Description The MTN7N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

1.90. 7n60 7n60f.pdf Size:2269K _goford

7N60
7N60

7N60/7N60F GOFORD 600V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe DMOS technology. 600V 1.3Ω 7A This latest technology has been especially designed to minimize on-state resistance, Have a high rugged avalanche characteristics.These devices are well suited for high efficiency switched mode power supplies, active p

1.91. sdf17n60.pdf Size:159K _solitron

7N60



1.92. ssf7n60f.pdf Size:523K _silikron

7N60
7N60

 SSF7N60F Main Product Characteristics: VDSS 600V RDS(on) 0.9ohm(typ.) ID 7A Marking and p in TO220F Schematic diagram Assignment Features and Benefits:  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

1.93. ssf7n60.pdf Size:433K _silikron

7N60
7N60

SSF7N60 Features VDSS = 600V ■ Extremely high dv/dt capability ID = 7A ■ Low Gate Charge Qg results in Simple Drive Requirement Rdson = 0.9Ω (typ.) ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description The SSF7N60 is a new generation of high voltage N–Channel enhancement mode

1.94. fsa07n60a.pdf Size:243K _inpower_semi

7N60
7N60

FSA07N60A N-Channel MOSFET Pb Lead Free Package and Finish Applications: VDSS RDS(ON) (Max.) ID • Adaptor • Charger 600 V 1.25 Ω 7.0 A • SMPS Standby Power Features: • RoHS Compliant • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve • ESD improved Capability G DS TO-220F Ordering Information PART NUMBER PACKAGE BRAND Packages FSA07N6

1.95. br7n60.pdf Size:1024K _blue-rocket-elect

7N60
7N60

BR7N60(BRCS7N60R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for high

1.96. brf7n60.pdf Size:1008K _blue-rocket-elect

7N60
7N60

BRF7N60(BRCS7N60FL) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220FL 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220FL Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for

1.97. brb7n60.pdf Size:747K _blue-rocket-elect

7N60
7N60

BRB7N60(3BRCS7N60CB) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-263 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for hi

1.98. hff7n60.pdf Size:644K _shantou-huashan

7N60
7N60

 Shantou Huashan Electronic Devices Co., Ltd. HFF7N60 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220F They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan

1.99. hfh7n60.pdf Size:616K _shantou-huashan

7N60
7N60

 Shantou Huashan Electronic Devices Co.,Ltd. HFH7N60 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance

1.100. hfp7n60.pdf Size:652K _shantou-huashan

7N60
7N60

 Shantou Huashan Electronic Devices Co., Ltd. HFP7N60 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan

1.101. cs7n60f a9r.pdf Size:269K _crhj

7N60
7N60

Silicon N-Channel Power MOSFET R ○ CS7N60F A9R General Description: VDSS 600 V CS7N60F A9R, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.102. cs7n60 a3r.pdf Size:279K _crhj

7N60
7N60

Silicon N-Channel Power MOSFET R ○ CS7N60 A3R General Description: VDSS 600 V CS7N60 A3R, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.103. cs7n60f a9hdy.pdf Size:625K _crhj

7N60
7N60

Silicon N-Channel Power MOSFET R ○ CS7N60F A9HDY General Description: VDSS 600 V CS7N60F A9HDY, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.104. cs7n60 a8hd.pdf Size:352K _crhj

7N60
7N60

Silicon N-Channel Power MOSFET R ○ CS7N60 A8HD General Description: VDSS 600 V CS7N60 A8HD, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.105. cs7n60 a4r.pdf Size:286K _crhj

7N60
7N60

Silicon N-Channel Power MOSFET R ○ CS7N60 A4R General Description: VDSS 600 V CS7N60 A4R, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.106. cs7n60f a9hd.pdf Size:351K _crhj

7N60
7N60

Silicon N-Channel Power MOSFET R ○ CS7N60F A9HD General Description: VDSS 600 V CS7N60F A9HD, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.107. cs7n60 a7hd.pdf Size:348K _crhj

7N60
7N60

Silicon N-Channel Power MOSFET R ○ CS7N60 A7HD General Description: VDSS 600 V CS7N60 A7HD, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.108. cm7n60 to220a.pdf Size:123K _jdsemi

7N60
7N60

R CM7N60 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2.主要特点 开关速度快 通态电阻小,输入电容小 3

1.109. cm7n60f.pdf Size:125K _jdsemi

7N60
7N60

R CM7N60F 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2.主要特点 开关速度快 1 2 通态电阻小,输入电容小

1.110. ftk7n60p f dd.pdf Size:247K _first_silicon

7N60
7N60

SEMICONDUCTOR FTK7N60P / F / DD TECHNICAL DATA Power MOSFET 7.0 Amps, 600 Volts N-CHANNEL MOSFET P : 1 DESCRIPTION TO-220 The FTK 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed F : s

1.111. sss7n60.pdf Size:779K _shenzhen-tuofeng-semi

7N60
7N60

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS7N60 600Volts 7.0Amps 600Volts ,600Volts 600Volts N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET ■ DESCRIPTION The SSS7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara

Datasheet: 4N65K , 5N65 , 5N65K , 6N65 , 5N60 , 6N60 , 6N60Z , 7N60A , 2SK3878 , 7N60Z , 7N60K , 8N60 , 10N60 , 10N60K , 12N60 , 15N60 , 18N60 .

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