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WMR07N03T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMR07N03T1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9.5 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: DFN2020-6L
 

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WMR07N03T1 Datasheet (PDF)

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WMR07N03T1

WMR07N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMR07N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V =30V, I = 7A DS D DFN2020-6LR

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WMR07N03T1

WMR07N06TS 60V N-Channel Enhancement Mode Power MOSFET GDescriptionDDSDSDWMR07N06TS uses advanced power trench technology that has SDDDbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = 60V, I = 7A DS D R

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WMR07N03T1

WMR07P03TS 30V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWMR07P03TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -30V, I = -7A DS DR

Otros transistores... WMQ50P03T1 , WMQ55N04T1 , WMQ55P02T1 , WMQ60P02TS , WMQ80N03T1 , WMR050N03LG4 , WMR05N10TS , WMR05P04TS , RU7088R , WMR07N06TS , WMR07P03TS , WMR09N02T1 , WMR10N03T1 , WMR12N03T1 , WMR12P02T1 , WMR13N03T1 , WMR140NV6LG4 .

History: BSO080P03NS3EG | WMM08N60C4

 

 
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