WMR07N03T1 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMR07N03T1
Marking Code: R07N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7 nC
trⓘ - Rise Time: 9.5 nS
Cossⓘ - Output Capacitance: 75 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: DFN2020-6L
WMR07N03T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMR07N03T1 Datasheet (PDF)
wmr07n03t1.pdf
WMR07N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMR07N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V =30V, I = 7A DS D DFN2020-6LR
wmr07n06ts.pdf
WMR07N06TS 60V N-Channel Enhancement Mode Power MOSFET GDescriptionDDSDSDWMR07N06TS uses advanced power trench technology that has SDDDbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = 60V, I = 7A DS D R
wmr07p03ts.pdf
WMR07P03TS 30V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWMR07P03TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -30V, I = -7A DS DR
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