WMS04N10T1 Todos los transistores

 

WMS04N10T1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMS04N10T1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 26 nS

Cossⓘ - Capacitancia de salida: 32 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm

Encapsulados: SOP8

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WMS04N10T1 datasheet

 ..1. Size:982K  way-on
wms04n10t1.pdf pdf_icon

WMS04N10T1

WMS04N10T1 100V N-Channel Enhancement Mode Power MOSFET Description D D D WMS04N10T1 uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S S S Features G SOP-8L V = 100V, I = 4A DS D R

 5.1. Size:750K  way-on
wms04n10ts.pdf pdf_icon

WMS04N10T1

WMS04N10TS 100V N-Channel Enhancement Mode Power MOSFET Description D D D WMS04N10TS uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S S S G Features SOP-8L V = 100V, I = 3.5A DS D R

 9.1. Size:789K  way-on
wms048nv6lg4.pdf pdf_icon

WMS04N10T1

WMS048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET D D Description D D WMS048NV6LG4 uses Wayon's 4th generation power trench MOSFET S technology that has been especially tailored to minimize the on-state S S resistance and yet maintain superior switching performance. This G SOP-8L device is well suited for high efficiency fast switching applications. Features

 9.2. Size:963K  way-on
wms04p10ts.pdf pdf_icon

WMS04N10T1

WMS04P10TS 100V P-Channel Enhancement Mode Power MOSFET D Description D D WMS04P10TS uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and S yet maintain superior switching performance. S S G Features SOP-8L V = -100V, I = -3.5A DS D R

Otros transistores... WMR140NV6LG4 , WMR14N03TB , WMR15N02T1 , WMR15N03TS , WMS02P15TS , WMS032N04LG2 , WMS048NV6HG4 , WMS048NV6LG4 , IRFZ44N , WMS04N10TS , WMS04P10TS , WMS05P04TS , WMS05P06T1 , WMS05P10TS , WMS06N10TS , WMS06N15T2 , WMS06P04T1 .

History: ELM56801EA | SFU9310 | DN3525 | SMD2N65 | WMS048NV6LG4 | GC11N65K

 

 

 

 

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