WMS04N10TS Todos los transistores

 ..1. Size:750K  way-on
 wms04n10ts.pdf

WMS04N10TS 100V N-Channel Enhancement Mode Power MOSFET Description D D D WMS04N10TS uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S S S G Features SOP-8L V = 100V, I = 3.5A DS D R

 5.1. Size:982K  way-on
 wms04n10t1.pdf

WMS04N10T1 100V N-Channel Enhancement Mode Power MOSFET Description D D D WMS04N10T1 uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S S S Features G SOP-8L V = 100V, I = 4A DS D R

 9.1. Size:789K  way-on
 wms048nv6lg4.pdf

WMS048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET D D Description D D WMS048NV6LG4 uses Wayon's 4th generation power trench MOSFET S technology that has been especially tailored to minimize the on-state S S resistance and yet maintain superior switching performance. This G SOP-8L device is well suited for high efficiency fast switching applications. Features

 9.2. Size:963K  way-on
 wms04p10ts.pdf

WMS04P10TS 100V P-Channel Enhancement Mode Power MOSFET D Description D D WMS04P10TS uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and S yet maintain superior switching performance. S S G Features SOP-8L V = -100V, I = -3.5A DS D R

 9.3. Size:811K  way-on
 wms048nv6hg4.pdf

WMS048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET D D Description D D WMS048NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S S S on-state resistance and yet maintain superior switching performance. G This device is well suited for high efficiency fast switching applications. SOP-8L Features V =