WMS04N10TS - аналоги и даташиты транзистора

 

WMS04N10TS - Даташиты. Аналоги. Основные параметры


   Наименование производителя: WMS04N10TS
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 3.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 19 ns
   Cossⓘ - Выходная емкость: 30 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm
   Тип корпуса: SOP8
 

 Аналог (замена) для WMS04N10TS

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMS04N10TS Datasheet (PDF)

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 wms04n10ts.pdf pdf_icon

WMS04N10TS

WMS04N10TS 100V N-Channel Enhancement Mode Power MOSFET Description DDDWMS04N10TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = 100V, I = 3.5A DS DR

 5.1. Size:982K  way-on
 wms04n10t1.pdf pdf_icon

WMS04N10TS

WMS04N10T1 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMS04N10T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSFeatures GSOP-8L V = 100V, I = 4A DS DR

 9.1. Size:789K  way-on
 wms048nv6lg4.pdf pdf_icon

WMS04N10TS

WMS048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS048NV6LG4 uses Wayon's 4th generation power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SSresistance and yet maintain superior switching performance. This GSOP-8Ldevice is well suited for high efficiency fast switching applications. Features

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 wms04p10ts.pdf pdf_icon

WMS04N10TS

WMS04P10TS 100V P-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS04P10TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Syet maintain superior switching performance. SSGFeatures SOP-8L V = -100V, I = -3.5A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMR14N03TB , WMR15N02T1 , WMR15N03TS , WMS02P15TS , WMS032N04LG2 , WMS048NV6HG4 , WMS048NV6LG4 , WMS04N10T1 , IRF3205 , WMS04P10TS , WMS05P04TS , WMS05P06T1 , WMS05P10TS , WMS06N10TS , WMS06N15T2 , WMS06P04T1 , WMS08DH04T1 .

History: 2SK1303 | AP9987GJ | IRFHM8363 | STD12NF06L | STD17NF03LT4 | 2SK1081 | IRF8736TR

 

 
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