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WMS06N10TS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMS06N10TS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35.8 nS
   Cossⓘ - Capacitancia de salida: 61.5 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: SOP-8L
     - Selección de transistores por parámetros

 

WMS06N10TS Datasheet (PDF)

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WMS06N10TS

WMS06N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMS06N10TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSFeatures GSOP-8L V = 100V, I = 5.8A DS DR

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WMS06N10TS

WMS06N15T2 150V N-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS06N15T2 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Syet maintain superior switching performance. SSGFeatures SOP-8L V = 150V, I = 5.8A DS DR

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 wms06p04t1.pdf pdf_icon

WMS06N10TS

WMS06P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS06P04T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = -40V, I = -6A DS DSOP-8LR

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: 4N65KG-T60-K | IRFR120TR | MRF5003 | AONS36316 | STP5N62K3 | RQK0608BQDQS

 

 
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