WMS06N10TS MOSFET. Datasheet pdf. Equivalent
Type Designator: WMS06N10TS
Marking Code: S06N10S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 5.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 37.9 nC
trⓘ - Rise Time: 35.8 nS
Cossⓘ - Output Capacitance: 61.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOP-8L
WMS06N10TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMS06N10TS Datasheet (PDF)
wms06n10ts.pdf
WMS06N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMS06N10TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSFeatures GSOP-8L V = 100V, I = 5.8A DS DR
wms06n15t2.pdf
WMS06N15T2 150V N-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS06N15T2 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Syet maintain superior switching performance. SSGFeatures SOP-8L V = 150V, I = 5.8A DS DR
wms06p04t1.pdf
WMS06P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS06P04T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = -40V, I = -6A DS DSOP-8LR
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100