WMS06N10TS MOSFET Datasheet: N-Ch, 100V, 5.8A. Full specification with pinout and replacement list

WMS06N10TS Specs and Replacement

Type Designator: WMS06N10TS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35.8 nS

Cossⓘ - Output Capacitance: 61.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SOP8

WMS06N10TS substitution

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WMS06N10TS datasheet

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WMS06N10TS 100V N-Channel Enhancement Mode Power MOSFET Description D D D WMS06N10TS uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S S S Features G SOP-8L V = 100V, I = 5.8A DS D R ... See More ⇒

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WMS06N15T2 150V N-Channel Enhancement Mode Power MOSFET D Description D D WMS06N15T2 uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and S yet maintain superior switching performance. S S G Features SOP-8L V = 150V, I = 5.8A DS D R ... See More ⇒

9.1. Size:783K way-on
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WMS06P04T1 40V P-Channel Enhancement Mode Power MOSFET Description D D WMS06P04T1 uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. S S Features S G V = -40V, I = -6A DS D SOP-8L R ... See More ⇒

Detailed specifications: WMS048NV6HG4, WMS048NV6LG4, WMS04N10T1, WMS04N10TS, WMS04P10TS, WMS05P04TS, WMS05P06T1, WMS05P10TS, IRF540, WMS06N15T2, WMS06P04T1, WMS08DH04T1, WMS08DN06TS, WMS08DP03TS, WMS08N06TS, WMS08P03T1, WMS08P04TS