All MOSFET. WMS06N10TS Datasheet

 

WMS06N10TS Datasheet and Replacement


   Type Designator: WMS06N10TS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35.8 nS
   Cossⓘ - Output Capacitance: 61.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOP8
 

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WMS06N10TS Datasheet (PDF)

 ..1. Size:765K  way-on
 wms06n10ts.pdf pdf_icon

WMS06N10TS

WMS06N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMS06N10TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSFeatures GSOP-8L V = 100V, I = 5.8A DS DR

 7.1. Size:769K  way-on
 wms06n15t2.pdf pdf_icon

WMS06N10TS

WMS06N15T2 150V N-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS06N15T2 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Syet maintain superior switching performance. SSGFeatures SOP-8L V = 150V, I = 5.8A DS DR

 9.1. Size:783K  way-on
 wms06p04t1.pdf pdf_icon

WMS06N10TS

WMS06P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS06P04T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = -40V, I = -6A DS DSOP-8LR

Datasheet: WMS048NV6HG4 , WMS048NV6LG4 , WMS04N10T1 , WMS04N10TS , WMS04P10TS , WMS05P04TS , WMS05P06T1 , WMS05P10TS , IRF540N , WMS06N15T2 , WMS06P04T1 , WMS08DH04T1 , WMS08DN06TS , WMS08DP03TS , WMS08N06TS , WMS08P03T1 , WMS08P04TS .

History: NCE70N380D | RQK0609CQDQS | SW2N65B | SVGP082R6NL5A | AP9972AGI | NCEP12T13A | SVG105R5NT

Keywords - WMS06N10TS MOSFET datasheet

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