WMS06N15T2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMS06N15T2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.8 nS
Cossⓘ - Capacitancia de salida: 75 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Encapsulados: SOP8
Búsqueda de reemplazo de WMS06N15T2 MOSFET
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WMS06N15T2 datasheet
wms06n15t2.pdf
WMS06N15T2 150V N-Channel Enhancement Mode Power MOSFET D Description D D WMS06N15T2 uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and S yet maintain superior switching performance. S S G Features SOP-8L V = 150V, I = 5.8A DS D R
wms06n10ts.pdf
WMS06N10TS 100V N-Channel Enhancement Mode Power MOSFET Description D D D WMS06N10TS uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S S S Features G SOP-8L V = 100V, I = 5.8A DS D R
wms06p04t1.pdf
WMS06P04T1 40V P-Channel Enhancement Mode Power MOSFET Description D D WMS06P04T1 uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. S S Features S G V = -40V, I = -6A DS D SOP-8L R
Otros transistores... WMS048NV6LG4 , WMS04N10T1 , WMS04N10TS , WMS04P10TS , WMS05P04TS , WMS05P06T1 , WMS05P10TS , WMS06N10TS , 50N06 , WMS06P04T1 , WMS08DH04T1 , WMS08DN06TS , WMS08DP03TS , WMS08N06TS , WMS08P03T1 , WMS08P04TS , WMS090DNV6LG4 .
History: AP20T15GI | JMPF7N65BJ | EM6K34 | IPD60R280P7
History: AP20T15GI | JMPF7N65BJ | EM6K34 | IPD60R280P7
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