WMS06N15T2 Specs and Replacement
Type Designator: WMS06N15T2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.8 nS
Cossⓘ - Output Capacitance: 75 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOP8
WMS06N15T2 substitution
- MOSFET ⓘ Cross-Reference Search
WMS06N15T2 datasheet
wms06n15t2.pdf
WMS06N15T2 150V N-Channel Enhancement Mode Power MOSFET D Description D D WMS06N15T2 uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and S yet maintain superior switching performance. S S G Features SOP-8L V = 150V, I = 5.8A DS D R ... See More ⇒
wms06n10ts.pdf
WMS06N10TS 100V N-Channel Enhancement Mode Power MOSFET Description D D D WMS06N10TS uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S S S Features G SOP-8L V = 100V, I = 5.8A DS D R ... See More ⇒
wms06p04t1.pdf
WMS06P04T1 40V P-Channel Enhancement Mode Power MOSFET Description D D WMS06P04T1 uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. S S Features S G V = -40V, I = -6A DS D SOP-8L R ... See More ⇒
Detailed specifications: WMS048NV6LG4, WMS04N10T1, WMS04N10TS, WMS04P10TS, WMS05P04TS, WMS05P06T1, WMS05P10TS, WMS06N10TS, 50N06, WMS06P04T1, WMS08DH04T1, WMS08DN06TS, WMS08DP03TS, WMS08N06TS, WMS08P03T1, WMS08P04TS, WMS090DNV6LG4
Keywords - WMS06N15T2 MOSFET specs
WMS06N15T2 cross reference
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WMS06N15T2 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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