WMS06N15T2
MOSFET. Datasheet pdf. Equivalent
Type Designator: WMS06N15T2
Marking Code: S06N15
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 5.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9.8
nC
trⓘ - Rise Time: 6.8
nS
Cossⓘ -
Output Capacitance: 75
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05
Ohm
Package: SOP-8L
WMS06N15T2
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMS06N15T2
Datasheet (PDF)
..1. Size:769K way-on
wms06n15t2.pdf
WMS06N15T2 150V N-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS06N15T2 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Syet maintain superior switching performance. SSGFeatures SOP-8L V = 150V, I = 5.8A DS DR
7.1. Size:765K way-on
wms06n10ts.pdf
WMS06N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMS06N10TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSFeatures GSOP-8L V = 100V, I = 5.8A DS DR
9.1. Size:783K way-on
wms06p04t1.pdf
WMS06P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS06P04T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = -40V, I = -6A DS DSOP-8LR
Datasheet: FMP36-015P
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