WMS06N15T2 Datasheet and Replacement
Type Designator: WMS06N15T2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6.8 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOP-8L
WMS06N15T2 substitution
WMS06N15T2 Datasheet (PDF)
wms06n15t2.pdf

WMS06N15T2 150V N-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS06N15T2 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Syet maintain superior switching performance. SSGFeatures SOP-8L V = 150V, I = 5.8A DS DR
wms06n10ts.pdf

WMS06N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMS06N10TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSFeatures GSOP-8L V = 100V, I = 5.8A DS DR
wms06p04t1.pdf

WMS06P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS06P04T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = -40V, I = -6A DS DSOP-8LR
Datasheet: WMS048NV6LG4 , WMS04N10T1 , WMS04N10TS , WMS04P10TS , WMS05P04TS , WMS05P06T1 , WMS05P10TS , WMS06N10TS , 50N06 , WMS06P04T1 , WMS08DH04T1 , WMS08DN06TS , WMS08DP03TS , WMS08N06TS , WMS08P03T1 , WMS08P04TS , WMS090DNV6LG4 .
History: WMS10N04TS | SSPL5505
Keywords - WMS06N15T2 MOSFET datasheet
WMS06N15T2 cross reference
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History: WMS10N04TS | SSPL5505



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