WMS08N06TS Todos los transistores

WMS08N06TS 60V N-Channel Enhancement Mode Power MOSFET Description D D D WMS08N06TS uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S S S Features G SOP-8L V = 60V, I = 8A DS D R

WMS08DP03TS 30V Dual P-Channel Enhancement Mode Power MOSFET D1 Description D1 D2 WMS08DP03TS uses advanced power trench technology that has D2 been especially tailored to minimize the on-state resistance and yet S1 maintain superior switching performance. G1 S2 G2 Features SOP-8L V = -30V, I = -8A DS D R

WMS08DH04T1 40V N+P Dual Channel Enhancement Mode Power MOSFET Description D1 D1 D2 WMS08DH04T1 uses advanced power trench technology that has been D2 especially tailored to minimize the on-state resistance and yet maintain S1 G1 superior switching performance. S2 G2 Features SOP-8L N - Channel V = 40V, I = 7.5A DS D R

WMS08P03T1 30V P-Channel Enhancement Mode Power MOSFET Description D WMS08P03T1 uses advanced power trench technology that has D D been especially tailored to minimize the on-state resistance and D yet maintain superior switching performance. S Features S S G V = -30V, I = -8A DS D SOP-8L R

WMS08P04TS 40V P-Channel Enhancement Mode Power MOSFET D Description D D WMS08P04TS uses advanced power trench technology that has been D especially tailored to minimize the on-state resistance and yet maintain S superior switching performance. S S G Features SOP-8L V = -40V, I = -8A DS D R

WMS08DN06TS 60V Dual N-Channel Enhancement Mode Power MOSFET D1 Description D1 D2 D2 WMS08DN06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S1 G1 maintain superior switching performance. S2 G2 Features SOP-8L V = 60V, I = 8A DS D R