WMS08N06TS - описание и поиск аналогов

 

WMS08N06TS - Аналоги. Основные параметры


   Наименование производителя: WMS08N06TS
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 3.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 25.8 ns
   Cossⓘ - Выходная емкость: 59 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm
   Тип корпуса: SOP8
 

 Аналог (замена) для WMS08N06TS

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMS08N06TS технические параметры

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 wms08n06ts.pdf pdf_icon

WMS08N06TS

WMS08N06TS 60V N-Channel Enhancement Mode Power MOSFET Description D D D WMS08N06TS uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S S S Features G SOP-8L V = 60V, I = 8A DS D R

 9.1. Size:764K  way-on
 wms08dp03ts.pdf pdf_icon

WMS08N06TS

WMS08DP03TS 30V Dual P-Channel Enhancement Mode Power MOSFET D1 Description D1 D2 WMS08DP03TS uses advanced power trench technology that has D2 been especially tailored to minimize the on-state resistance and yet S1 maintain superior switching performance. G1 S2 G2 Features SOP-8L V = -30V, I = -8A DS D R

 9.2. Size:846K  way-on
 wms08dh04t1.pdf pdf_icon

WMS08N06TS

WMS08DH04T1 40V N+P Dual Channel Enhancement Mode Power MOSFET Description D1 D1 D2 WMS08DH04T1 uses advanced power trench technology that has been D2 especially tailored to minimize the on-state resistance and yet maintain S1 G1 superior switching performance. S2 G2 Features SOP-8L N - Channel V = 40V, I = 7.5A DS D R

 9.3. Size:764K  way-on
 wms08p03t1.pdf pdf_icon

WMS08N06TS

WMS08P03T1 30V P-Channel Enhancement Mode Power MOSFET Description D WMS08P03T1 uses advanced power trench technology that has D D been especially tailored to minimize the on-state resistance and D yet maintain superior switching performance. S Features S S G V = -30V, I = -8A DS D SOP-8L R

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMS05P06T1 , WMS05P10TS , WMS06N10TS , WMS06N15T2 , WMS06P04T1 , WMS08DH04T1 , WMS08DN06TS , WMS08DP03TS , IRLZ44N , WMS08P03T1 , WMS08P04TS , WMS090DNV6LG4 , WMS090N04LG2 , WMS090NV6LG4 , WMS099N10LGS , WMS09DP03TS , WMS09N06TS .

 

 
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