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WMS10DH04TS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMS10DH04TS
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.6 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: SOP8
 

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WMS10DH04TS Datasheet (PDF)

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WMS10DH04TS

WMS10DH04TS 40V N+P Dual Channel Enhancement Mode Power MOSFET DescriptionD1D1D2WMS10DH04TS uses advanced power trench technology that has been D2especially tailored to minimize the on-state resistance and yet maintain S1G1superior switching performance.S2G2Features SOP-8L N - Channel V = 40V, I = 10A DS DR

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WMS10DH04TS

WMS10DN04TS 40V Dual N-Channel Enhancement Mode Power MOSFET D1DescriptionD1D2D2WMS10DN04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S1G1maintain superior switching performance. S2G2Features SOP-8L V = 40V, I =10A DS DR

 9.1. Size:994K  way-on
 wms10n04ts.pdf pdf_icon

WMS10DH04TS

WMS10N04TS 40V N-Channel Enhancement Mode Power MOSFET Description DDDWMS10N04TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = 40V, I =10A DS DR

Otros transistores... WMS090DNV6LG4 , WMS090N04LG2 , WMS090NV6LG4 , WMS099N10LGS , WMS09DP03TS , WMS09N06TS , WMS09P02TS , WMS09P06TS , IRFB4115 , WMS10DN04TS , WMS10N04TS , WMS119N10LG2 , WMS11P02TS , WMS11P04T1 , WMS12P03T1 , WMS13N03T1 , WMS13P04T1 .

History: SQJ486EP | NCE70T540D | SVGQ041R7NL5V-2HSTR | MTP30P06V | 2SK1650 | FTK2N65P | TPM7002BKM

 

 
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