WMS10DH04TS Datasheet and Replacement
Type Designator: WMS10DH04TS
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 5.6 nS
Cossⓘ - Output Capacitance: 110 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: SOP-8L
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WMS10DH04TS Datasheet (PDF)
wms10dh04ts.pdf

WMS10DH04TS 40V N+P Dual Channel Enhancement Mode Power MOSFET DescriptionD1D1D2WMS10DH04TS uses advanced power trench technology that has been D2especially tailored to minimize the on-state resistance and yet maintain S1G1superior switching performance.S2G2Features SOP-8L N - Channel V = 40V, I = 10A DS DR
wms10dn04ts.pdf

WMS10DN04TS 40V Dual N-Channel Enhancement Mode Power MOSFET D1DescriptionD1D2D2WMS10DN04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S1G1maintain superior switching performance. S2G2Features SOP-8L V = 40V, I =10A DS DR
wms10n04ts.pdf

WMS10N04TS 40V N-Channel Enhancement Mode Power MOSFET Description DDDWMS10N04TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = 40V, I =10A DS DR
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: TMP830 | IRFS151 | IRFR420A | SHD224802 | IRF7749L2TRPBF | 2SK3342 | IRFM1310ST
Keywords - WMS10DH04TS MOSFET datasheet
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History: TMP830 | IRFS151 | IRFR420A | SHD224802 | IRF7749L2TRPBF | 2SK3342 | IRFM1310ST



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