WMS10DH04TS Datasheet and Replacement
Type Designator: WMS10DH04TS
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.6 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: SOP-8L
WMS10DH04TS substitution
WMS10DH04TS Datasheet (PDF)
wms10dh04ts.pdf

WMS10DH04TS 40V N+P Dual Channel Enhancement Mode Power MOSFET DescriptionD1D1D2WMS10DH04TS uses advanced power trench technology that has been D2especially tailored to minimize the on-state resistance and yet maintain S1G1superior switching performance.S2G2Features SOP-8L N - Channel V = 40V, I = 10A DS DR
wms10dn04ts.pdf

WMS10DN04TS 40V Dual N-Channel Enhancement Mode Power MOSFET D1DescriptionD1D2D2WMS10DN04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S1G1maintain superior switching performance. S2G2Features SOP-8L V = 40V, I =10A DS DR
wms10n04ts.pdf

WMS10N04TS 40V N-Channel Enhancement Mode Power MOSFET Description DDDWMS10N04TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = 40V, I =10A DS DR
Datasheet: WMS090DNV6LG4 , WMS090N04LG2 , WMS090NV6LG4 , WMS099N10LGS , WMS09DP03TS , WMS09N06TS , WMS09P02TS , WMS09P06TS , IRFB4115 , WMS10DN04TS , WMS10N04TS , WMS119N10LG2 , WMS11P02TS , WMS11P04T1 , WMS12P03T1 , WMS13N03T1 , WMS13P04T1 .
History: NCEP072N10A | SIZ704DT
Keywords - WMS10DH04TS MOSFET datasheet
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History: NCEP072N10A | SIZ704DT



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