WMS11P04T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMS11P04T1
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20.2 nS
Cossⓘ - Capacitancia de salida: 190 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
Paquete / Cubierta: SOP-8L
Búsqueda de reemplazo de WMS11P04T1 MOSFET
WMS11P04T1 Datasheet (PDF)
wms11p04t1.pdf

WMS11P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS11P04T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Dyet maintain superior switching performance. S SFeatures SG V = -40V, I = -10.5A DS DSOP-8LR
wms11p02ts.pdf

WMS11P02TS 20V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS11P02TS uses advanced power trench technology that has been DDespecially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -20V, I = -11A DS DR
wms119n10lg2.pdf

WMS119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS119N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state S SSresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications.SOP-8LFeatures
Otros transistores... WMS09N06TS , WMS09P02TS , WMS09P06TS , WMS10DH04TS , WMS10DN04TS , WMS10N04TS , WMS119N10LG2 , WMS11P02TS , K3569 , WMS12P03T1 , WMS13N03T1 , WMS13P04T1 , WMS140DNV6LG4 , WMS140NV6LG4 , WMS14DN03T1 , WMS14P03T1 , WMS15N03T1 .
History: SRN1660F
History: SRN1660F



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