WMS11P04T1 Specs and Replacement
Type Designator: WMS11P04T1
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20.2 nS
Cossⓘ - Output Capacitance: 190 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: SOP8
WMS11P04T1 substitution
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WMS11P04T1 datasheet
Detailed specifications: WMS09N06TS, WMS09P02TS, WMS09P06TS, WMS10DH04TS, WMS10DN04TS, WMS10N04TS, WMS119N10LG2, WMS11P02TS, IRF9540, WMS12P03T1, WMS13N03T1, WMS13P04T1, WMS140DNV6LG4, WMS140NV6LG4, WMS14DN03T1, WMS14P03T1, WMS15N03T1
Keywords - WMS11P04T1 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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