WMS140DNV6LG4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMS140DNV6LG4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 65 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 1.9 nS
Cossⓘ - Capacitancia de salida: 202 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Encapsulados: SOP8
Búsqueda de reemplazo de WMS140DNV6LG4 MOSFET
- Selecciónⓘ de transistores por parámetros
WMS140DNV6LG4 datasheet
wms140dnv6lg4.pdf
WMS140DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET D1 D1 Description D2 D2 WMS140DNV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1 G1 S2 on-state resistance and yet maintain superior switching performance. G2 This device is well suited for high efficiency fast switching applications. SOP-8L Fe
wms140nv6lg4.pdf
WMS140NV6LG4 65V N-Channel Enhancement Mode Power MOSFET D Description D D WMS140NV6LG4 uses Wayon's 4th generation power trench D MOSFET technology that has been especially tailored to minimize S the on-state resistance and yet maintain superior switching S S performance. This device is well suited for high efficiency fast G switching applications. SOP-8L Features
wms14dn03t1.pdf
WMS14DN03T1 30V Dual N-Channel Enhancement Mode Power MOSFET D1 Description D1 D2 D2 WMS14DN03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S1 G1 maintain superior switching performance. S2 G2 Features SOP-8L V = 30V, I = 14A DS D R
Otros transistores... WMS10DN04TS , WMS10N04TS , WMS119N10LG2 , WMS11P02TS , WMS11P04T1 , WMS12P03T1 , WMS13N03T1 , WMS13P04T1 , 2N7002 , WMS140NV6LG4 , WMS14DN03T1 , WMS14P03T1 , WMS15N03T1 , WMS15P02T1 , WMS175DN10LG4 , WMS175N10HG4 , WMS175N10LG4 .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10 | AUD069N10A | AUD062N08BG | AUD060N08AG | AUD060N055 | AUD056N08BGL | AUB062N08BG
Popular searches
irf530 datasheet | 2sc2625 | 2sc1815 transistor | 2sd718 | 2n3053 transistor | 2sc458 replacement | bc557 transistor | 2n3638
