WMS140DNV6LG4 Specs and Replacement
Type Designator: WMS140DNV6LG4
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 1.9 nS
Cossⓘ - Output Capacitance: 202 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOP8
WMS140DNV6LG4 substitution
- MOSFET ⓘ Cross-Reference Search
WMS140DNV6LG4 datasheet
wms140dnv6lg4.pdf
WMS140DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET D1 D1 Description D2 D2 WMS140DNV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1 G1 S2 on-state resistance and yet maintain superior switching performance. G2 This device is well suited for high efficiency fast switching applications. SOP-8L Fe... See More ⇒
wms140nv6lg4.pdf
WMS140NV6LG4 65V N-Channel Enhancement Mode Power MOSFET D Description D D WMS140NV6LG4 uses Wayon's 4th generation power trench D MOSFET technology that has been especially tailored to minimize S the on-state resistance and yet maintain superior switching S S performance. This device is well suited for high efficiency fast G switching applications. SOP-8L Features ... See More ⇒
wms14dn03t1.pdf
WMS14DN03T1 30V Dual N-Channel Enhancement Mode Power MOSFET D1 Description D1 D2 D2 WMS14DN03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S1 G1 maintain superior switching performance. S2 G2 Features SOP-8L V = 30V, I = 14A DS D R ... See More ⇒
Detailed specifications: WMS10DN04TS, WMS10N04TS, WMS119N10LG2, WMS11P02TS, WMS11P04T1, WMS12P03T1, WMS13N03T1, WMS13P04T1, 2N7002, WMS140NV6LG4, WMS14DN03T1, WMS14P03T1, WMS15N03T1, WMS15P02T1, WMS175DN10LG4, WMS175N10HG4, WMS175N10LG4
Keywords - WMS140DNV6LG4 MOSFET specs
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