WMS175N10HG4 Todos los transistores

 

WMS175N10HG4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMS175N10HG4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.6 nS
   Cossⓘ - Capacitancia de salida: 197 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: SOP8
 

 Búsqueda de reemplazo de WMS175N10HG4 MOSFET

   - Selección ⓘ de transistores por parámetros

 

Principales características: WMS175N10HG4

 ..1. Size:784K  way-on
wms175n10hg4.pdf pdf_icon

WMS175N10HG4

WMS175N10HG4 100V N-Channel Enhancement Mode Power MOSFET D D Description D D WMS175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state S S S resistance and yet maintain superior switching performance. This G device is well suited for high efficiency fast switching applications. SOP-8L Features

 5.1. Size:770K  way-on
wms175n10lg4.pdf pdf_icon

WMS175N10HG4

WMS175N10LG4 100V N-Channel Enhancement Mode Power MOSFET D D Description D D WMS175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state S S S resistance and yet maintain superior switching performance. This G device is well suited for high efficiency fast switching applications. SOP-8L Features

 8.1. Size:977K  way-on
wms175dn10lg4.pdf pdf_icon

WMS175N10HG4

WMS175DN10LG4 100V N-Channel Enhancement Mode Power MOSFET D1 D1 Description D2 D2 WMS175DN10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1 G1 S2 on-state resistance and yet maintain superior switching performance. G2 This device is well suited for high efficiency fast switching applications. SOP-8L Fea

 9.1. Size:769K  way-on
wms17p03ts.pdf pdf_icon

WMS175N10HG4

Otros transistores... WMS13P04T1 , WMS140DNV6LG4 , WMS140NV6LG4 , WMS14DN03T1 , WMS14P03T1 , WMS15N03T1 , WMS15P02T1 , WMS175DN10LG4 , 4435 , WMS175N10LG4 , WMS17P03TS , WMS240N10LG2 , WMS690N15HG2 , WMT04N10TS , WMT04P06TS , WMT04P10TS , WMT05N10T1 .

 

 
Back to Top

 


social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AP3N50K | AP3N50F | AP3912GD | AP3415E | AP3404S | AP3404 | AP3205 | AP3139 | AP3134N5 | AP3101A | AP3100A | AP30P06K | AP30P06 | AP30N04K | AP30N03K | AP30H80K

 

 

 
Back to Top

 

Popular searches

2n3638 | tip127 datasheet | irlz24n | irf620 | irfp350 | 13003 transistor | c458 transistor | 2sc1775

 


 
.