Справочник MOSFET. WMS175N10HG4

 

WMS175N10HG4 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WMS175N10HG4
   Маркировка: 175N10H4
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 3.1 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 9 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 17 nC
   Время нарастания (tr): 3.6 ns
   Выходная емкость (Cd): 197 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.018 Ohm
   Тип корпуса: SOP-8L

 Аналог (замена) для WMS175N10HG4

 

 

WMS175N10HG4 Datasheet (PDF)

 ..1. Size:784K  way-on
 wms175n10hg4.pdf

WMS175N10HG4 WMS175N10HG4

WMS175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state S SSresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures

 5.1. Size:770K  way-on
 wms175n10lg4.pdf

WMS175N10HG4 WMS175N10HG4

WMS175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state S SSresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures

 8.1. Size:977K  way-on
 wms175dn10lg4.pdf

WMS175N10HG4 WMS175N10HG4

WMS175DN10LG4 100V N-Channel Enhancement Mode Power MOSFET D1D1DescriptionD2D2WMS175DN10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1G1S2on-state resistance and yet maintain superior switching performance. G2This device is well suited for high efficiency fast switching applications. SOP-8LFea

 9.1. Size:769K  way-on
 wms17p03ts.pdf

WMS175N10HG4 WMS175N10HG4

WMS17P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS17P03TS uses advanced power trench technology that has been DDespecially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -30V, I = -17.5A DS DR

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