WMT07N03T1 Todos los transistores

 

WMT07N03T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMT07N03T1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.1 nS
   Cossⓘ - Capacitancia de salida: 72 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm
   Paquete / Cubierta: SOT223
 

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WMT07N03T1 Datasheet (PDF)

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WMT07N03T1

WMT07N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMT07N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 30V, I = 7A DS DR

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WMT07N03T1

WMT07N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMT07N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 60V, I = 7A DS D R

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WMT07N03T1

WMT07N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMT07N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 100V, I = 6.8A DS DR

Otros transistores... WMS17P03TS , WMS240N10LG2 , WMS690N15HG2 , WMT04N10TS , WMT04P06TS , WMT04P10TS , WMT05N10T1 , WMT05N12TS , AON7506 , WMT07N06TS , WMT07N10TS , WMU080N10HG2 , IRF9317TR , SL002P02K , SL05N06A , SL05N06Z , SL05N10A .

 

 
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