WMT07N03T1 Datasheet. Specs and Replacement

Type Designator: WMT07N03T1  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.1 nS

Cossⓘ - Output Capacitance: 72 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: SOT223

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WMT07N03T1 substitution

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WMT07N03T1 datasheet

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WMT07N03T1

WMT07N03T1 30V N-Channel Enhancement Mode Power MOSFET Description WMT07N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 30V, I = 7A DS D R ... See More ⇒

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WMT07N03T1

WMT07N06TS 60V N-Channel Enhancement Mode Power MOSFET Description WMT07N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 60V, I = 7A DS D R ... See More ⇒

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WMT07N03T1

WMT07N10TS 100V N-Channel Enhancement Mode Power MOSFET Description WMT07N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 100V, I = 6.8A DS D R ... See More ⇒

Detailed specifications: WMS17P03TS, WMS240N10LG2, WMS690N15HG2, WMT04N10TS, WMT04P06TS, WMT04P10TS, WMT05N10T1, WMT05N12TS, AON6380, WMT07N06TS, WMT07N10TS, WMU080N10HG2, IRF9317TR, SL002P02K, SL05N06A, SL05N06Z, SL05N10A

Keywords - WMT07N03T1 MOSFET specs

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