WMT07N06TS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMT07N06TS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15.3 nS
Cossⓘ - Capacitancia de salida: 59 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
Paquete / Cubierta: SOT223
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WMT07N06TS Datasheet (PDF)
wmt07n06ts.pdf

WMT07N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMT07N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 60V, I = 7A DS D R
wmt07n03t1.pdf

WMT07N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMT07N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 30V, I = 7A DS DR
wmt07n10ts.pdf

WMT07N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMT07N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 100V, I = 6.8A DS DR
Otros transistores... WMS240N10LG2 , WMS690N15HG2 , WMT04N10TS , WMT04P06TS , WMT04P10TS , WMT05N10T1 , WMT05N12TS , WMT07N03T1 , AO4407 , WMT07N10TS , WMU080N10HG2 , IRF9317TR , SL002P02K , SL05N06A , SL05N06Z , SL05N10A , SL1002B .
History: NCE3008XM | NTR3C21NZ | MTB070P15J3 | WNM12N65F | RF4E070BN
History: NCE3008XM | NTR3C21NZ | MTB070P15J3 | WNM12N65F | RF4E070BN



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