WMT07N06TS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMT07N06TS  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15.3 nS

Cossⓘ - Capacitancia de salida: 59 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: SOT223

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WMT07N06TS datasheet

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WMT07N06TS

WMT07N06TS 60V N-Channel Enhancement Mode Power MOSFET Description WMT07N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 60V, I = 7A DS D R

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WMT07N06TS

WMT07N03T1 30V N-Channel Enhancement Mode Power MOSFET Description WMT07N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 30V, I = 7A DS D R

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WMT07N06TS

WMT07N10TS 100V N-Channel Enhancement Mode Power MOSFET Description WMT07N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 100V, I = 6.8A DS D R

Otros transistores... WMS240N10LG2, WMS690N15HG2, WMT04N10TS, WMT04P06TS, WMT04P10TS, WMT05N10T1, WMT05N12TS, WMT07N03T1, IRF530, WMT07N10TS, WMU080N10HG2, IRF9317TR, SL002P02K, SL05N06A, SL05N06Z, SL05N10A, SL1002B