WMT07N06TS Todos los transistores

 

WMT07N06TS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMT07N06TS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15.3 nS
   Cossⓘ - Capacitancia de salida: 59 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: SOT223
 

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WMT07N06TS PDF Specs

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WMT07N06TS

WMT07N06TS 60V N-Channel Enhancement Mode Power MOSFET Description WMT07N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 60V, I = 7A DS D R ... See More ⇒

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WMT07N06TS

WMT07N03T1 30V N-Channel Enhancement Mode Power MOSFET Description WMT07N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 30V, I = 7A DS D R ... See More ⇒

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WMT07N06TS

WMT07N10TS 100V N-Channel Enhancement Mode Power MOSFET Description WMT07N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 100V, I = 6.8A DS D R ... See More ⇒

Otros transistores... WMS240N10LG2 , WMS690N15HG2 , WMT04N10TS , WMT04P06TS , WMT04P10TS , WMT05N10T1 , WMT05N12TS , WMT07N03T1 , IRF530 , WMT07N10TS , WMU080N10HG2 , IRF9317TR , SL002P02K , SL05N06A , SL05N06Z , SL05N10A , SL1002B .

 

 
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