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WMT07N06TS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMT07N06TS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 2.7 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 7 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 15.3 nS
   Conductancia de drenaje-sustrato (Cd): 59 pF
   Resistencia entre drenaje y fuente RDS(on): 0.035 Ohm
   Paquete / Cubierta: SOT223

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WMT07N06TS Datasheet (PDF)

 ..1. Size:514K  way-on
wmt07n06ts.pdf

WMT07N06TS
WMT07N06TS

WMT07N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMT07N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 60V, I = 7A DS D R

 7.1. Size:469K  way-on
wmt07n03t1.pdf

WMT07N06TS
WMT07N06TS

WMT07N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMT07N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 30V, I = 7A DS DR

 8.1. Size:994K  way-on
wmt07n10ts.pdf

WMT07N06TS
WMT07N06TS

WMT07N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMT07N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 100V, I = 6.8A DS DR

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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