SL05N06Z Todos los transistores

SL05N06Z Product Summary Features Excellent package for good heat dissipation VDS RDS(ON) MAX ID MAX Ultra low gate charge 100m @10V D2 60V S1 5A D1 Low reverse transfer capacitance 150m @4.5V Fast switching capability Avalanche energy specified Application D Power switching application S D G D SOT-89 top view Schematic diagram 05N06Z Device code

SL05N06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 5.0A D R ( at V =10V) 100 mohm DS(ON) GS R ( at V =4.5V) 120 mohm DS(ON) GS General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON) Applications DC-DC Converters Powe

SL05N10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 5.0A D R ( at V =10V) 180 mohm DS(ON) GS R ( at V =4.5V) 300 mohm DS(ON) GS General Description Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer electronic po