SL05N06Z MOSFET Datasheet: N-Ch, 60V, 4.5A. Full specification with pinout and replacement list

SL05N06Z Specs and Replacement

   Type Designator: SL05N06Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT89

SL05N06Z substitution

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SL05N06Z datasheet

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SL05N06Z Product Summary Features Excellent package for good heat dissipation VDS RDS(ON) MAX ID MAX Ultra low gate charge 100m @10V D2 60V S1 5A D1 Low reverse transfer capacitance 150m @4.5V Fast switching capability Avalanche energy specified Application D Power switching application S D G D SOT-89 top view Schematic diagram 05N06Z Device code ... See More ⇒

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SL05N06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 5.0A D R ( at V =10V) 100 mohm DS(ON) GS R ( at V =4.5V) 120 mohm DS(ON) GS General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON) Applications DC-DC Converters Powe... See More ⇒

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SL05N10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 5.0A D R ( at V =10V) 180 mohm DS(ON) GS R ( at V =4.5V) 300 mohm DS(ON) GS General Description Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer electronic po... See More ⇒

Detailed specifications: WMT05N12TS , WMT07N03T1 , WMT07N06TS , WMT07N10TS , WMU080N10HG2 , IRF9317TR , SL002P02K , SL05N06A , TK10A60D , SL05N10A , SL1002B , SL100N03R , SL10N06A , SL10N10A , SL10P04S , SL120N03R , SL12N10 .