SL05N06Z Datasheet and Replacement
Type Designator: SL05N06Z
Marking Code: 05N06Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 9 nC
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 28 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT89
SL05N06Z substitution
SL05N06Z Datasheet (PDF)
sl05n06z.pdf

SL05N06ZProduct SummaryFeatures Excellent package for good heat dissipation VDS RDS(ON) MAX ID MAX Ultra low gate charge 100m@10VD260V S1 5AD1 Low reverse transfer capacitance150m@4.5V Fast switching capability Avalanche energy specifiedApplicationD Power switching applicationSDGDSOT-89 top viewSchematic diagram05N06Z: Device code
sl05n06a.pdf

SL05N06AN-Channel Enhancement Mode Field Effect TransistorProduct Summary V 60V DS I 5.0AD R ( at V =10V) 100 mohm DS(ON) GS R ( at V =4.5V) 120 mohmDS(ON) GSGeneral Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON)Applications DC-DC Converters Powe
sl05n10a.pdf

SL05N10AN-Channel Enhancement Mode Field Effect TransistorProduct Summary V 100VDS I 5.0A D R ( at V =10V) 180 mohmDS(ON) GS R ( at V =4.5V) 300 mohmDS(ON) GSGeneral Description Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recoveryApplications Consumer electronic po
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: SWP055R68E7T
Keywords - SL05N06Z MOSFET datasheet
SL05N06Z cross reference
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History: SWP055R68E7T



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