SL05N10A Todos los transistores

SL05N10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 5.0A D R ( at V =10V) 180 mohm DS(ON) GS R ( at V =4.5V) 300 mohm DS(ON) GS General Description Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer electronic po

SL05N06Z Product Summary Features Excellent package for good heat dissipation VDS RDS(ON) MAX ID MAX Ultra low gate charge 100m @10V D2 60V S1 5A D1 Low reverse transfer capacitance 150m @4.5V Fast switching capability Avalanche energy specified Application D Power switching application S D G D SOT-89 top view Schematic diagram 05N06Z Device code

SL05N06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 5.0A D R ( at V =10V) 100 mohm DS(ON) GS R ( at V =4.5V) 120 mohm DS(ON) GS General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON) Applications DC-DC Converters Powe