SL05N10A MOSFET Datasheet: N-Ch, 100V, 5A. Full specification with pinout and replacement list

SL05N10A Specs and Replacement

Type Designator: SL05N10A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 29 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: SOT23

SL05N10A substitution

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SL05N10A datasheet

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SL05N10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 5.0A D R ( at V =10V) 180 mohm DS(ON) GS R ( at V =4.5V) 300 mohm DS(ON) GS General Description Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer electronic po... See More ⇒

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SL05N06Z Product Summary Features Excellent package for good heat dissipation VDS RDS(ON) MAX ID MAX Ultra low gate charge 100m @10V D2 60V S1 5A D1 Low reverse transfer capacitance 150m @4.5V Fast switching capability Avalanche energy specified Application D Power switching application S D G D SOT-89 top view Schematic diagram 05N06Z Device code ... See More ⇒

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SL05N06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 5.0A D R ( at V =10V) 100 mohm DS(ON) GS R ( at V =4.5V) 120 mohm DS(ON) GS General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON) Applications DC-DC Converters Powe... See More ⇒

Detailed specifications: WMT07N03T1, WMT07N06TS, WMT07N10TS, WMU080N10HG2, IRF9317TR, SL002P02K, SL05N06A, SL05N06Z, AO4407, SL1002B, SL100N03R, SL10N06A, SL10N10A, SL10P04S, SL120N03R, SL12N10, SL12N100