All MOSFET. SL05N10A Datasheet

 

SL05N10A MOSFET. Datasheet pdf. Equivalent


   Type Designator: SL05N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.3 nC
   trⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: SOT23

 SL05N10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SL05N10A Datasheet (PDF)

 ..1. Size:1612K  slkor
 sl05n10a.pdf

SL05N10A SL05N10A

SL05N10AN-Channel Enhancement Mode Field Effect TransistorProduct Summary V 100VDS I 5.0A D R ( at V =10V) 180 mohmDS(ON) GS R ( at V =4.5V) 300 mohmDS(ON) GSGeneral Description Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recoveryApplications Consumer electronic po

 9.1. Size:734K  slkor
 sl05n06z.pdf

SL05N10A SL05N10A

SL05N06ZProduct SummaryFeatures Excellent package for good heat dissipation VDS RDS(ON) MAX ID MAX Ultra low gate charge 100m@10VD260V S1 5AD1 Low reverse transfer capacitance150m@4.5V Fast switching capability Avalanche energy specifiedApplicationD Power switching applicationSDGDSOT-89 top viewSchematic diagram05N06Z: Device code

 9.2. Size:974K  slkor
 sl05n06a.pdf

SL05N10A SL05N10A

SL05N06AN-Channel Enhancement Mode Field Effect TransistorProduct Summary V 60V DS I 5.0AD R ( at V =10V) 100 mohm DS(ON) GS R ( at V =4.5V) 120 mohmDS(ON) GSGeneral Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON)Applications DC-DC Converters Powe

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History: AP10C325Y | CEM3252 | HUF75343P3

 

 
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