SL1002B
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SL1002B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 100
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 2
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19
nS
Cossⓘ - Capacitancia
de salida: 29
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.31
Ohm
Paquete / Cubierta:
SOT23
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SL1002B
Datasheet (PDF)
..1. Size:860K slkor
sl1002b.pdf 
SL1002BN-Ch 100V Fast Switching MOSFETs Green Device Available Product Summary Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench BVDSS RDSON ID technology 100V 310m 2 A Description SOT23 Pin Configuration The SL1002B is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for m
9.1. Size:17K advanced-semi
cbsl100.pdf
CBSL100NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL100 is Designed for PACKAGE STYLE .400 BAL FLG (C) A .080x45 B FULL R(4X).060 RFEATURES: EMD Input Matching Network C .1925 F Omnigold Metalization System G H NI LK JMAXIMUM RATINGS MINIMUM MAXIMUMDIMinches / mm inches / mmIC 25 A .220 / 5.59 .230 / 5.
9.2. Size:1740K slkor
sl100n08.pdf
SL100N08N-Channel Power MOSFET General Features VDS =80V,I =100A D RDS(ON)
9.3. Size:1244K slkor
sl100n03r.pdf
SL100N03R N-Channel Enhancement Mode Power MOSFETDescription This Power MOSFET is produced using advanced Trench technology. This devices provide an excellent gate charge and RDS(on), which leads to extremely communication and conduction losses. So it is very suitable for AC/DC power conversion, load switch and industrial power applications. Features PDFN5*6-8L VDS=30VI
9.4. Size:301K jiejie micro
jmsl1008agq.pdf
JMSL1008AGQ100V 6.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 88 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)6.0 m RDS(ON)_Typ (@ VGS = 4.5V)8.0 m Halogen-free and RoHS-compliant AEC-Q101
9.5. Size:289K jiejie micro
jmsl1008ag.pdf
JMSL1008AG100V 6.0m N-Ch Power MOSFETFeatures Product SummaryParameter Typ. Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 93 A RDS(ON) (@ VGS = 10V)6.0 Pb-free Lead Plating m RDS(ON) (@ VGS = 4.5V)8.0 m Halogen-free and RoHS-compliantApplications Power Managerment
9.6. Size:325K jiejie micro
jmsl1004bg.pdf
JMSL1004BG100V 3.4m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 117 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)3.4 m RDS(ON)_Typ (@ VGS = 4.5V)4.3 m Halogen-free and RoHS-compliantApplications Powe
9.7. Size:392K jiejie micro
jmsl1009akq.pdf
JMSL1009AKQ100V 7.8m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 81 A RDS(ON)_Typ (@ VGS = 10V)7.8 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)9.9 m Halogen-free and RoHS-compliant AEC-Q10
9.8. Size:325K jiejie micro
jmsl1008ak.pdf
JMSL1008AK100V 6.7m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 82 A RDS(ON)_Typ (@ VGS = 10V)6.7 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)8.5 m Halogen-free and RoHS-compliantApplications Pow
9.9. Size:1259K jiejie micro
jmsl1004rg.pdf
100V, 98A, 4.1m N-channel Power SGT MOSFETJMSL1004RGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 100 V 100% Vds TESTEDVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 98 A Pb-free platingRDS(ON)_Typ(@VGS=10V 4.1 mWApplications Load Switch PWM Application Power Manag
9.10. Size:1195K jiejie micro
jmsl1008pgq.pdf
100V, 92A, 8.3m N-channel Power SGT MOSFETJMSL1008PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)ParametersValue Unit Low Gate ChargeVDSS 100 V 100% UIS TestedVGS(th)_Typ 1.8 V 100% Vds TestedID(@VGS=10V) 92 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 6.8 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 8.3 mWApplications
9.11. Size:325K jiejie micro
jmsl1006agq.pdf
JMSL1006AGQ100V 4.7m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 110 A RDS(ON) (@ VGS = 10V)4.7 m Pb-free Lead Plating RDS(ON) (@ VGS = 4.5V)5.9 m Halogen-free and RoHS-compliant AEC-Q101 Qualified
9.12. Size:1311K jiejie micro
jmsl1009pun.pdf
100V, 45A, 7.5m N-channel Power SGT MOSFETJMSL1009PUNProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 45 A Pb-free platingRDS(ON)_Typ(@VGS=10V 6.1 mWRDS(ON)_Typ(@VGS=4.5V 7.5 mWApplications Load Switch P
9.13. Size:1274K jiejie micro
jmsl1005pc.pdf
100V, 131A, 4.4m N-channel Power SGT MOSFETJMSL1005PCProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 131 ARDS(ON)_Typ(@VGS=10V 4.4 mWApplications Load Switch PWM Application Power ManagementDG STO
9.14. Size:1233K jiejie micro
jmsl1009pp.pdf
100V, 12A, 9.2m N-channel Power SGT MOSFETJMSL1009PPProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 12 A Pb-free platingRDS(ON)_Typ(@VGS=10V 7.6 mWRDS(ON)_Typ(@VGS=4.5V 9.2 mWApplications Load Switch PW
9.15. Size:1241K jiejie micro
jmsl1006pgs.pdf
100V, 109A, 6.4m N-channel Power SGT MOSFETJMSL1006PGSProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 109 ARDS(ON)_Typ(@VGS=10V 4.4 mWApplications RDS(ON)_Typ(@VGS=4.5V 6.4 mW Load Switch PWM Application
9.16. Size:629K jiejie micro
jmsl1008mkq.pdf
100V, 56A, 9.0m N-channel Power SGT MOSFETJMSL1008MKQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate ChargeVDSS 100 V 100% UIS TestedVGS(th)_Typ 1.7 V 100% Vds Tested ID(@VGS=10V) 56 ARDS(ON)_Typ(@VGS=10V 6.5 m Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=4.5V 9.0 m AEC-Q101 QualifiedApplications
9.17. Size:1243K jiejie micro
jmsl1009pg.pdf
100V, 93A, 7.3m N-channel Power SGT MOSFETJMSL1009PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 93 ARDS(ON)_Typ(@VGS=10V 5.6 mWApplications RDS(ON)_Typ(@VGS=4.5V 7.3 mW Load Switch PWM Application Pow
9.18. Size:1289K jiejie micro
jmsl1006pgq.pdf
100V, 120A, 5.5m N-channel Power SGT MOSFETJMSL1006PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) ParametersValue Unit Low Gate ChargeVDSS 100 V 100% UIS TestedVGS(th)_Typ 1.6 V 100% Vds TestedID(@VGS=10V) 120 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 4.5 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 5.5 mWApplications
9.19. Size:391K jiejie micro
jmsl1009au.pdf
JMSL1009AU100V 7.6m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 67 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)7.6 m RDS(ON)_Typ (@ VGS = 4.5V)9.7 m Halogen-free and RoHS-compliantApplications
9.20. Size:1193K jiejie micro
jmsl1005pk.pdf
100V, 71A, 5.2m N-channel Power SGT MOSFETJMSL1005PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 71 ARDS(ON)_Typ(@VGS=10V 4.2 mWApplications RDS(ON)_Typ(@VGS=4.5V 5.2 mW Load Switch PWM Application Pow
9.21. Size:1240K jiejie micro
jmsl1006pg.pdf
100V, 115A, 5.5m N-channel Power SGT MOSFETJMSL1006PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 115 ARDS(ON)_Typ(@VGS=10V 4.3 mWApplications RDS(ON)_Typ(@VGS=4.5V 5.5 mW Load Switch PWM Application P
9.22. Size:1287K jiejie micro
jmsl1009pk.pdf
100V, 88A, 5.8m N-channel Power SGT MOSFETJMSL1009PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TESTEDVDSS 100 V 100% Vds TESTEDVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 88 A Pb-free platingRDS(ON)_Typ(@VGS=10V 5.8 mWRDS(ON)_Typ(@VGS=4.5V 7.6 mWApplications Load Switch PWM
9.23. Size:399K jiejie micro
jmsl1009ak.pdf
JMSL1009AK100V 7.8m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 78 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 7.8 m RDS(ON)_Typ (@ VGS = 4.5V)9.9 m Halogen-free and RoHS-compliantApplication
9.24. Size:355K jiejie micro
jmsl1009buq.pdf
JMSL1009BUQ100V 7.7m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 76 A RDS(ON)_Typ (@ VGS = 10V)7.7 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)10.0 m Halogen-free and RoHS-compliant AEC-Q1
9.25. Size:656K jiejie micro
jmsl1008ac jmsl1008ae.pdf
JMSL1008ACJMSL1008AE100V 6.5mW N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 114 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 6.5 mW RDS(ON)_Typ (@ VGS = 4.5V)8.1 mW Halogen-free and RoHS-compliantApplications
9.26. Size:323K jiejie micro
jmsl1006ak.pdf
JMSL1006AK100V 5.4m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 99 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)5.4 m RDS(ON)_Typ (@ VGS = 4.5V)6.6 m Halogen-free and RoHS-compliantApplications Power
9.27. Size:308K jiejie micro
jmsl1006ag.pdf
JMSL1006AG100V 4.7m N-Ch Power MOSFETProduct SummaryFeaturesParameter Typ. Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)1.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 108 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 4.7 m RDS(ON) (@ VGS = 4.5V)5.9 m Halogen-free and RoHS-compliantApplications Power Managermen
9.28. Size:350K jiejie micro
jmsl1008ap.pdf
JMSL1008AP100V 7.4m N-Ch Power MOSFETProduct SummaryFeaturesParameter Typ. Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 12 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 7.4 m RDS(ON) (@ VGS = 4.5V)9.2 m Halogen-free and RoHS-compliantApplications Power Manager
9.29. Size:1226K jiejie micro
jmsl1009pf.pdf
100V, 53A, 5.8m N-channel Power SGT MOSFETJMSL1009PFProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 53 ARDS(ON)_Typ(@VGS=10V 5.8 mWApplications Load Switch PWM Application Power ManagementDG STO-22
9.30. Size:394K jiejie micro
jmsl1009ag.pdf
JMSL1009AG100V 7.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 77 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)7.0 m RDS(ON)_Typ (@ VGS = 4.5V)8.9 m Halogen-free and RoHS-compliantApplications
9.31. Size:1205K jiejie micro
jmsl1005pg.pdf
100V, 128A, 5.3m N-channel Power SGT MOSFETJMSL1005PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 128 ARDS(ON)_Typ(@VGS=10V 4.3 mWApplications RDS(ON)_Typ(@VGS=4.5V 5.3 mW Load Switch PWM Application P
9.32. Size:402K jiejie micro
jmsl1009agq.pdf
JMSL1009AGQ100V 7.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 80 A RDS(ON)_Typ (@ VGS = 10V)7.0 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)8.9 m Halogen-free and RoHS-compliant AEC-Q10
9.33. Size:352K jiejie micro
jmsl1008akq.pdf
JMSL1008AKQ100V 6.7m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 98 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)6.7 m RDS(ON)_Typ (@ VGS = 4.5V)8.5 m Halogen-free and RoHS-compliant AEC-Q10
9.34. Size:400K teamasia
sl100.pdf
CEOCBOEBOA DCj stgCEOC BCBOC EEBOE CCBOCB EEBOEB CC CEC CEC BC BoboCB E
Otros transistores... WMT07N06TS
, WMT07N10TS
, WMU080N10HG2
, IRF9317TR
, SL002P02K
, SL05N06A
, SL05N06Z
, SL05N10A
, 18N50
, SL100N03R
, SL10N06A
, SL10N10A
, SL10P04S
, SL120N03R
, SL12N10
, SL12N100
, SL12N100F
.
History: WMK36N60C4
| SSF2N60D
| CHM20P06PAGP
| CHM2313GP-A
| SSF2841
| BRCS2303MA
| CZDM1003N
