SL1002B - описание и поиск аналогов

SL1002B N-Ch 100V Fast Switching MOSFETs Green Device Available Product Summary Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench BVDSS RDSON ID technology 100V 310m 2 A Description SOT23 Pin Configuration The SL1002B is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for m

CBSL100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION The ASI CBSL100 is Designed for PACKAGE STYLE .400 BAL FLG (C) A .080x45 B FULL R (4X).060 R FEATURES E M D Input Matching Network C .1925 F Omnigold Metalization System G H N I L K J MAXIMUM RATINGS MINIMUM MAXIMUM DIM inches / mm inches / mm IC 25 A .220 / 5.59 .230 / 5.

SL100N08 N-Channel Power MOSFET General Features VDS =80V,I =100A D RDS(ON)

SL100N03R N-Channel Enhancement Mode Power MOSFET Description This Power MOSFET is produced using advanced Trench technology. This devices provide an excellent gate charge and RDS(on), which leads to extremely communication and conduction losses. So it is very suitable for AC/DC power conversion, load switch and industrial power applications. Features PDFN5*6-8L VDS=30V I

JMSL1008AGQ 100V 6.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 88 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 6.0 m RDS(ON)_Typ (@ VGS = 4.5V) 8.0 m Halogen-free and RoHS-compliant AEC-Q101

JMSL1008AG 100V 6.0m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 93 A RDS(ON) (@ VGS = 10V) 6.0 Pb-free Lead Plating m RDS(ON) (@ VGS = 4.5V) 8.0 m Halogen-free and RoHS-compliant Applications Power Managerment

JMSL1004BG 100V 3.4m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 117 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3.4 m RDS(ON)_Typ (@ VGS = 4.5V) 4.3 m Halogen-free and RoHS-compliant Applications Powe

JMSL1009AKQ 100V 7.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 81 A RDS(ON)_Typ (@ VGS = 10V) 7.8 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 9.9 m Halogen-free and RoHS-compliant AEC-Q10

JMSL1008AK 100V 6.7m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 82 A RDS(ON)_Typ (@ VGS = 10V) 6.7 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 8.5 m Halogen-free and RoHS-compliant Applications Pow

100V, 98A, 4.1m N-channel Power SGT MOSFET JMSL1004RG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 100 V 100% Vds TESTED VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 98 A Pb-free plating RDS(ON)_Typ(@VGS=10V 4.1 mW Applications Load Switch PWM Application Power Manag

100V, 92A, 8.3m N-channel Power SGT MOSFET JMSL1008PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 100 V 100% UIS Tested VGS(th)_Typ 1.8 V 100% Vds Tested ID(@VGS=10V) 92 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 6.8 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 8.3 mW Applications

JMSL1006AGQ 100V 4.7m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th) 1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 110 A RDS(ON) (@ VGS = 10V) 4.7 m Pb-free Lead Plating RDS(ON) (@ VGS = 4.5V) 5.9 m Halogen-free and RoHS-compliant AEC-Q101 Qualified

100V, 45A, 7.5m N-channel Power SGT MOSFET JMSL1009PUN Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 45 A Pb-free plating RDS(ON)_Typ(@VGS=10V 6.1 mW RDS(ON)_Typ(@VGS=4.5V 7.5 mW Applications Load Switch P

100V, 131A, 4.4m N-channel Power SGT MOSFET JMSL1005PC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 131 A RDS(ON)_Typ(@VGS=10V 4.4 mW Applications Load Switch PWM Application Power Management D G S TO

100V, 12A, 9.2m N-channel Power SGT MOSFET JMSL1009PP Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 12 A Pb-free plating RDS(ON)_Typ(@VGS=10V 7.6 mW RDS(ON)_Typ(@VGS=4.5V 9.2 mW Applications Load Switch PW

100V, 109A, 6.4m N-channel Power SGT MOSFET JMSL1006PGS Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 109 A RDS(ON)_Typ(@VGS=10V 4.4 mW Applications RDS(ON)_Typ(@VGS=4.5V 6.4 mW Load Switch PWM Application

100V, 56A, 9.0m N-channel Power SGT MOSFET JMSL1008MKQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 100 V 100% UIS Tested VGS(th)_Typ 1.7 V 100% Vds Tested ID(@VGS=10V) 56 A RDS(ON)_Typ(@VGS=10V 6.5 m Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=4.5V 9.0 m AEC-Q101 Qualified Applications

100V, 93A, 7.3m N-channel Power SGT MOSFET JMSL1009PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 93 A RDS(ON)_Typ(@VGS=10V 5.6 mW Applications RDS(ON)_Typ(@VGS=4.5V 7.3 mW Load Switch PWM Application Pow

JMSL1009AU 100V 7.6m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 67 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 7.6 m RDS(ON)_Typ (@ VGS = 4.5V) 9.7 m Halogen-free and RoHS-compliant Applications

100V, 71A, 5.2m N-channel Power SGT MOSFET JMSL1005PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 71 A RDS(ON)_Typ(@VGS=10V 4.2 mW Applications RDS(ON)_Typ(@VGS=4.5V 5.2 mW Load Switch PWM Application Pow

100V, 115A, 5.5m N-channel Power SGT MOSFET JMSL1006PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 115 A RDS(ON)_Typ(@VGS=10V 4.3 mW Applications RDS(ON)_Typ(@VGS=4.5V 5.5 mW Load Switch PWM Application P

100V, 88A, 5.8m N-channel Power SGT MOSFET JMSL1009PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 100 V 100% Vds TESTED VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 88 A Pb-free plating RDS(ON)_Typ(@VGS=10V 5.8 mW RDS(ON)_Typ(@VGS=4.5V 7.6 mW Applications Load Switch PWM

JMSL1009AK 100V 7.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 78 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 7.8 m RDS(ON)_Typ (@ VGS = 4.5V) 9.9 m Halogen-free and RoHS-compliant Application

JMSL1009BUQ 100V 7.7m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 76 A RDS(ON)_Typ (@ VGS = 10V) 7.7 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 10.0 m Halogen-free and RoHS-compliant AEC-Q1

JMSL1006AK 100V 5.4m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 99 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 5.4 m RDS(ON)_Typ (@ VGS = 4.5V) 6.6 m Halogen-free and RoHS-compliant Applications Power

JMSL1006AG 100V 4.7m N-Ch Power MOSFET Product Summary Features Parameter Typ. Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 1.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 108 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 4.7 m RDS(ON) (@ VGS = 4.5V) 5.9 m Halogen-free and RoHS-compliant Applications Power Managermen

JMSL1008AP 100V 7.4m N-Ch Power MOSFET Product Summary Features Parameter Typ. Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_typ 1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 12 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 7.4 m RDS(ON) (@ VGS = 4.5V) 9.2 m Halogen-free and RoHS-compliant Applications Power Manager

100V, 53A, 5.8m N-channel Power SGT MOSFET JMSL1009PF Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 53 A RDS(ON)_Typ(@VGS=10V 5.8 mW Applications Load Switch PWM Application Power Management D G S TO-22

JMSL1009AG 100V 7.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 77 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 7.0 m RDS(ON)_Typ (@ VGS = 4.5V) 8.9 m Halogen-free and RoHS-compliant Applications

100V, 128A, 5.3m N-channel Power SGT MOSFET JMSL1005PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 128 A RDS(ON)_Typ(@VGS=10V 4.3 mW Applications RDS(ON)_Typ(@VGS=4.5V 5.3 mW Load Switch PWM Application P

JMSL1009AGQ 100V 7.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 80 A RDS(ON)_Typ (@ VGS = 10V) 7.0 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 8.9 m Halogen-free and RoHS-compliant AEC-Q10

JMSL1008AKQ 100V 6.7m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 98 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 6.7 m RDS(ON)_Typ (@ VGS = 4.5V) 8.5 m Halogen-free and RoHS-compliant AEC-Q10

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