SL10N10A Todos los transistores

SL10N10A N-Channel Enhancement Mode Field Effect Transistor Product Summary D 100 V VDS 95 m RDS(ON)@10V,MAX D2 S1 10 A ID D1 S D G FEATURES SOT-223 Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON) Absolute Maximum Ratings (TA=25 unless otherwise noted) Symbol Parameter Rating Unit Common Ra

SL10N65F N-CHANNEL MOSFET MAIN CHARACTERISTICS 10A I D 650V V DSS 0.94 R V =10V DS(ON) GS 35nC Q G APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge LED LED power supplies FEATURES 1 Gate

SL10N06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 10A D R ( at V =10V) DS(ON) GS 35 mohm R ( at V =4.5V) 45 mohm DS(ON) GS General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON) Applications DC-DC Converters Power m