SL10N10A MOSFET Datasheet: N-Ch, 100V, 10A. Full specification with pinout and replacement list

SL10N10A Specs and Replacement

Type Designator: SL10N10A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 33 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm

Package: SOT223

SL10N10A substitution

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SL10N10A datasheet

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SL10N10A N-Channel Enhancement Mode Field Effect Transistor Product Summary D 100 V VDS 95 m RDS(ON)@10V,MAX D2 S1 10 A ID D1 S D G FEATURES SOT-223 Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON) Absolute Maximum Ratings (TA=25 unless otherwise noted) Symbol Parameter Rating Unit Common Ra... See More ⇒

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sl10n65f.pdf pdf_icon

SL10N65F N-CHANNEL MOSFET MAIN CHARACTERISTICS 10A I D 650V V DSS 0.94 R V =10V DS(ON) GS 35nC Q G APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge LED LED power supplies FEATURES 1 Gate ... See More ⇒

9.2. Size:1762K slkor
sl10n06a.pdf pdf_icon

SL10N06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 10A D R ( at V =10V) DS(ON) GS 35 mohm R ( at V =4.5V) 45 mohm DS(ON) GS General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON) Applications DC-DC Converters Power m... See More ⇒

Detailed specifications: IRF9317TR, SL002P02K, SL05N06A, SL05N06Z, SL05N10A, SL1002B, SL100N03R, SL10N06A, IRF1407, SL10P04S, SL120N03R, SL12N10, SL12N100, SL12N100F, SL12N100K, SL12N100T, SL12P03S