SL2318 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SL2318 datasheet

..1. Size:1147K slkor
sl2318.pdf pdf_icon

SL2318 40V/4.1A N Channel Advanced Power MOSFET Features V(BR)DSS RDS(ON) Typ ID Max Low RDS(on) @VGS=10V 4.5V Logic Level Control 29m @ 10V N Channel SOT23 Package 40V 4.1A 36m @ 4.5V Pb-Free, RoHS Compliant Applications Load Switch DC/DC Converter Switching Circuits Power Management Order Information SOT23 Marking Product Package Pack

9.1. Size:1664K slkor
sl2314.pdf pdf_icon

SL2314 20V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SL2314 is the N-Channel logic enhancement 20V/4.5A, RDS(ON)=25m (typ.)@VGS=4.5V m mode power field effect transistor is produced using 20V/2.5A, RDS(ON)=55 (typ.)@VGS=2.5V high cell density advanced trench technology.. 20V/2.0A, RDS(ON)=80m (typ.)@VGS=1.8V This high density process is

9.2. Size:710K slkor
sl2319a.pdf pdf_icon

SL2319A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -40V DS I -4.4A D R ( at V =-10V) 90mohm DS(ON) GS R ( at V =-4.5V) DS(ON) GS 150mohm General Description Trench Power LV MOSFET technology High density cell design for Low RDS(ON) High Speed switching Absolute Maximum Ratings (T =25 unless otherwise noted) A P

9.3. Size:1452K slkor
sl2312.pdf pdf_icon

SL2312 SOT-23 Package Information Dimensions in Millimeters Symbol MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 0 8 www.slkormicro.com 3