SL4409N Todos los transistores

SL4409N N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-323 58m @4.5V 20 V 2.3A @2.5V 86m 1. GATE 2. SOURCE 3. DRAIN APPLICATION FEATURE Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter Equivalent Circuit MARKING Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source

SL4406 N-Channel MOSFET SOP-8 Features VDS (V) = 30V ID = 15 A (VGS = 10V) RDS(ON) 7.5m (VGS = 10V) 1.50 0.15 RDS(ON) 11.0m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 2

SL4407A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I D -12A R DS(ON)( at VGS=-20V) 11mohm R ( at V =-10V) DS(ON) GS 13mohm RDS(ON)( at VGS=-6V) 17mohm R ( at V =-4.5V) DS(ON) GS 27mohm General Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Spee