SL4409N MOSFET. Datasheet pdf. Equivalent
Type Designator: SL4409N
Marking Code: N48
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 2.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4 nC
trⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 120 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
Package: SOT323
SL4409N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SL4409N Datasheet (PDF)
sl4409n.pdf
SL4409NN-Channel MOSFET IDV(BR)DSS RDS(on)MAX SOT-323 58m@4.5V20 V 2.3A@2.5V86m1. GATE 2. SOURCE 3. DRAIN APPLICATION FEATURE Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter Equivalent Circuit MARKINGMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS 20V Gate-Source
sl4406.pdf
SL4406N-Channel MOSFETSOP-8 Features VDS (V) = 30V ID = 15 A (VGS = 10V) RDS(ON) 7.5m (VGS = 10V)1.50 0.15 RDS(ON) 11.0m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS 2
sl4407a.pdf
SL4407AP-Channel Enhancement Mode Field Effect TransistorProduct Summary V -30VDS ID-12A RDS(ON)( at VGS=-20V)11mohm R ( at V =-10V)DS(ON) GS13mohm RDS(ON)( at VGS=-6V)17mohm R ( at V =-4.5V)DS(ON) GS27mohmGeneral Description Trench Power LV MOSFET technology High density cell design for Low RDS(ON) High Spee
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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