SL4409N Specs and Replacement
Type Designator: SL4409N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 2.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
Package: SOT323
SL4409N substitution
- MOSFET ⓘ Cross-Reference Search
SL4409N datasheet
sl4409n.pdf
SL4409N N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-323 58m @4.5V 20 V 2.3A @2.5V 86m 1. GATE 2. SOURCE 3. DRAIN APPLICATION FEATURE Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter Equivalent Circuit MARKING Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source... See More ⇒
sl4406.pdf
SL4406 N-Channel MOSFET SOP-8 Features VDS (V) = 30V ID = 15 A (VGS = 10V) RDS(ON) 7.5m (VGS = 10V) 1.50 0.15 RDS(ON) 11.0m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 2... See More ⇒
sl4407a.pdf
SL4407A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I D -12A R DS(ON)( at VGS=-20V) 11mohm R ( at V =-10V) DS(ON) GS 13mohm RDS(ON)( at VGS=-6V) 17mohm R ( at V =-4.5V) DS(ON) GS 27mohm General Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Spee... See More ⇒
Detailed specifications: SL3139K, SL3139T, SL3416, SL4041, SL40P05Y, SL4184, SL4406, SL4407A, 20N60, SL4410, SL4421, SL4435A, SL4449A, SL4459, SL4614, SL4813A, SL4822A
Keywords - SL4409N MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: FHD5N60A
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