All MOSFET. SL4409N Datasheet

 

SL4409N Datasheet and Replacement


   Type Designator: SL4409N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: SOT323
 

 SL4409N substitution

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SL4409N Datasheet (PDF)

 ..1. Size:433K  slkor
sl4409n.pdf pdf_icon

SL4409N

SL4409NN-Channel MOSFET IDV(BR)DSS RDS(on)MAX SOT-323 58m@4.5V20 V 2.3A@2.5V86m1. GATE 2. SOURCE 3. DRAIN APPLICATION FEATURE Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter Equivalent Circuit MARKINGMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS 20V Gate-Source

 9.1. Size:2267K  slkor
sl4406.pdf pdf_icon

SL4409N

SL4406N-Channel MOSFETSOP-8 Features VDS (V) = 30V ID = 15 A (VGS = 10V) RDS(ON) 7.5m (VGS = 10V)1.50 0.15 RDS(ON) 11.0m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS 2

 9.2. Size:952K  slkor
sl4407a.pdf pdf_icon

SL4409N

SL4407AP-Channel Enhancement Mode Field Effect TransistorProduct Summary V -30VDS ID-12A RDS(ON)( at VGS=-20V)11mohm R ( at V =-10V)DS(ON) GS13mohm RDS(ON)( at VGS=-6V)17mohm R ( at V =-4.5V)DS(ON) GS27mohmGeneral Description Trench Power LV MOSFET technology High density cell design for Low RDS(ON) High Spee

Datasheet: SL3139K , SL3139T , SL3416 , SL4041 , SL40P05Y , SL4184 , SL4406 , SL4407A , 20N60 , SL4410 , SL4421 , SL4435A , SL4449A , SL4459 , SL4614 , SL4813A , SL4822A .

History: SLU60R380S2 | PMPB15XN | LNH06R062 | APT8052BLL | CS5N70F | SHD224622 | 6N60KL-TMS4-T

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