SGB100N042 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGB100N042
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 120 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 775 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de SGB100N042 MOSFET
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SGB100N042 datasheet
sgb100n042 sgp100n042.pdf
SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power MOSFET SG*100N042 Rev. 0.9 Jul. 2021 www.supersemi.com.cn SGB100N042/SGP100N042 100V N-Channel MOSFET Description Features VDS 100V The SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 120A that is uniquely optimized to provide the most efficient hig
sgb100n025 sgp100n025 sgw100n025.pdf
SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power MOSFET SG*100N025 Rev. 1.1 Jul. 2021 www.supersemi.com.cn SGB100N025/SGP100N025/SGW100N025 100V N-Channel MOSFET Description Features VDS 100V The SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 180A that is uniquely optimized to provide the most ef
sgb10n60a .pdf
SGB10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switc
sgb10n60a.pdf
SGB10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switc
Otros transistores... SL9926A , SL9945 , SL9968 , SL9N150T , SLP170C04D , SLP240C03D , SGB080N055 , SGB100N025 , IRF530 , SGL100N025 , SGP080N055 , SGP100N025 , SGP100N042 , SGT080N055 , SGW080N055 , SGW100N025 , SSA50R060S .
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