SGB100N042 Todos los transistores

 

SGB100N042 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SGB100N042
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 775 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
   Paquete / Cubierta: TO263
 

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SGB100N042 Datasheet (PDF)

 ..1. Size:605K  cn super semi
 sgb100n042 sgp100n042.pdf pdf_icon

SGB100N042

SUPER-SEMISUPER-MOSFETSuper Gate Metal Oxide Semiconductor Field Effect Transistor100V Super Gate Power MOSFETSG*100N042Rev. 0.9Jul. 2021www.supersemi.com.cnSGB100N042/SGP100N042100V N-Channel MOSFETDescription Features VDS 100VThe SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 120Athat is uniquely optimized to provide the most efficient hig

 6.1. Size:708K  cn super semi
 sgb100n025 sgp100n025 sgw100n025.pdf pdf_icon

SGB100N042

SUPER-SEMISUPER-MOSFETSuper Gate Metal Oxide Semiconductor Field Effect Transistor100V Super Gate Power MOSFETSG*100N025Rev. 1.1Jul. 2021www.supersemi.com.cnSGB100N025/SGP100N025/SGW100N025100V N-Channel MOSFETDescription Features VDS 100VThe SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 180Athat is uniquely optimized to provide the most ef

 9.1. Size:789K  infineon
 sgb10n60a .pdf pdf_icon

SGB100N042

SGB10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switc

 9.2. Size:785K  infineon
 sgb10n60a.pdf pdf_icon

SGB100N042

SGB10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switc

MOSTRAR MÁS

Otros transistores... SL9926A , SL9945 , SL9968 , SL9N150T , SLP170C04D , SLP240C03D , SGB080N055 , SGB100N025 , AO4407 , SGL100N025 , SGP080N055 , SGP100N025 , SGP100N042 , SGT080N055 , SGW080N055 , SGW100N025 , SSA50R060S .

History: IRF6702M2D | SIZ346DT | SJMN380R60D | WMK08N65C4 | SWI051R08ES | TMD2N60H | HCA60R150T

 

 
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