Справочник MOSFET. SGB100N042

 

SGB100N042 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SGB100N042
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 120 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 17 ns
   Cossⓘ - Выходная емкость: 775 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0042 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для SGB100N042

   - подбор ⓘ MOSFET транзистора по параметрам

 

SGB100N042 Datasheet (PDF)

 ..1. Size:605K  cn super semi
 sgb100n042 sgp100n042.pdf pdf_icon

SGB100N042

SUPER-SEMISUPER-MOSFETSuper Gate Metal Oxide Semiconductor Field Effect Transistor100V Super Gate Power MOSFETSG*100N042Rev. 0.9Jul. 2021www.supersemi.com.cnSGB100N042/SGP100N042100V N-Channel MOSFETDescription Features VDS 100VThe SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 120Athat is uniquely optimized to provide the most efficient hig

 6.1. Size:708K  cn super semi
 sgb100n025 sgp100n025 sgw100n025.pdf pdf_icon

SGB100N042

SUPER-SEMISUPER-MOSFETSuper Gate Metal Oxide Semiconductor Field Effect Transistor100V Super Gate Power MOSFETSG*100N025Rev. 1.1Jul. 2021www.supersemi.com.cnSGB100N025/SGP100N025/SGW100N025100V N-Channel MOSFETDescription Features VDS 100VThe SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 180Athat is uniquely optimized to provide the most ef

 9.1. Size:789K  infineon
 sgb10n60a .pdf pdf_icon

SGB100N042

SGB10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switc

 9.2. Size:785K  infineon
 sgb10n60a.pdf pdf_icon

SGB100N042

SGB10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switc

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... SL9926A , SL9945 , SL9968 , SL9N150T , SLP170C04D , SLP240C03D , SGB080N055 , SGB100N025 , AO4407 , SGL100N025 , SGP080N055 , SGP100N025 , SGP100N042 , SGT080N055 , SGW080N055 , SGW100N025 , SSA50R060S .

History: IRLR024NPBF | HFW50N06 | WMO07N65C4 | 2SK1796 | SE10030A | TK100A10N1 | STFI13NM60N

 

 
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