SGW100N025 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SGW100N025
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 175 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 180 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 1600 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0027 Ohm
   Paquete / Cubierta: TO247

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SGW100N025 Datasheet (PDF)

..1. Size:708K cn super semi
sgb100n025 sgp100n025 sgw100n025.pdf

SUPER-SEMISUPER-MOSFETSuper Gate Metal Oxide Semiconductor Field Effect Transistor100V Super Gate Power MOSFETSG*100N025Rev. 1.1Jul. 2021www.supersemi.com.cnSGB100N025/SGP100N025/SGW100N025100V N-Channel MOSFETDescription Features VDS 100VThe SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 180Athat is uniquely optimized to provide the most ef

9.1. Size:273K samsung
sgw10n60rufd.pdf

CO-PAK IGBT SGW10N60RUFDFEATURESD2-PAK* Short Circuit rated 10uS @Tc=100 * High Speed Switching* Low Saturation Voltage : VCE(sat) = 1.95 V @ Ic=10A* High Input Impedance* CO-PAK, IGBT with FRD : Trr = 42nS (Typ)CAPPLICATIONS* AC & DC Motor controlsG* General Purpose Inverters* Robotics , Servo Controls* Power Supply E* Lamp BallastABSOLUTE MAXIMUM RATING

9.2. Size:321K infineon
sgp10n60a sgw10n60a rev2.pdf

SGP10N60A SGW10N60AFast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable b

9.3. Size:348K infineon
sgw10n60a.pdf