SGW100N025 PDF and Equivalents Search

 

SGW100N025 Specs and Replacement

Type Designator: SGW100N025

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 175 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 1600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm

Package: TO247

SGW100N025 substitution

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SGW100N025 datasheet

 ..1. Size:708K  cn super semi
 sgb100n025 sgp100n025 sgw100n025.pdf pdf_icon

SGW100N025

SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power MOSFET SG*100N025 Rev. 1.1 Jul. 2021 www.supersemi.com.cn SGB100N025/SGP100N025/SGW100N025 100V N-Channel MOSFET Description Features VDS 100V The SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 180A that is uniquely optimized to provide the most ef... See More ⇒

 9.1. Size:273K  samsung
 sgw10n60rufd.pdf pdf_icon

SGW100N025

CO-PAK IGBT SGW10N60RUFD FEATURES D2-PAK * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage VCE(sat) = 1.95 V @ Ic=10A * High Input Impedance * CO-PAK, IGBT with FRD Trr = 42nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATING... See More ⇒

 9.2. Size:321K  infineon
 sgp10n60a sgw10n60a rev2.pdf pdf_icon

SGW100N025

SGP10N60A SGW10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable b... See More ⇒

 9.3. Size:348K  infineon
 sgw10n60a.pdf pdf_icon

SGW100N025

SGP10N60A SGW10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable b... See More ⇒

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Detailed specifications: SGB100N025, SGB100N042, SGL100N025, SGP080N055, SGP100N025, SGP100N042, SGT080N055, SGW080N055, AO4407, SSA50R060S, SSA65R190S, SSB20N60S, SSB60R075SFD2, SSB60R099S2E, SSB60R099SFD, SSB60R105SFD2, SSB60R140SFD

Keywords - SGW100N025 MOSFET specs

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