SSB80R240SFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSB80R240SFD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 170 W
Voltaje máximo drenador - fuente |Vds|: 800 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 20 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 41 nC
Tiempo de subida (tr): 18 nS
Conductancia de drenaje-sustrato (Cd): 74 pF
Resistencia entre drenaje y fuente RDS(on): 0.24 Ohm
Paquete / Cubierta: TO263
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SSB80R240SFD Datasheet (PDF)
ssb80r240sfd ssw80r240sfd.pdf
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ssb80r160sfd ssw80r160sfd.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFET Gen- With Fast-RecoverySS*80R160SFDRev. 1.1Apr. 2023www.supersemi.com.cnSSB80R160SFD/SSW80R160SFD800V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-E
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History: WMM30N80M3
