SSB80R240SFD MOSFET. Datasheet pdf. Equivalent
Type Designator: SSB80R240SFD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 170 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 41 nC
Rise Time (tr): 18 nS
Drain-Source Capacitance (Cd): 74 pF
Maximum Drain-Source On-State Resistance (Rds): 0.24 Ohm
Package: TO263
SSB80R240SFD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSB80R240SFD Datasheet (PDF)
ssb80r240sfd ssw80r240sfd.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFET Gen- With Fast-RecoverySS*80R240SFDRev. 1.1Apr. 2023www.supersemi.com.cnSSB80R240SFD/SSW80R240SFD800V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-E
ssb80r240s2 ssw80r240s2.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFET Gen-SS*80R240S2Rev. 1.0Dec. 2022www.supersemi.com.cnSSB80R240S2/SSW80R240S2800V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advance
ssf80r240s ssp80r240s ssb80r240s.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFETSS*80R240SRev. 2.1Jun. 2022www.supersemi.com.cnSeptember, 2013SJ-FETSSF80R240S/SSP80R240S/SSB80R240S800V N-Channel MOSFETDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advan
ssb80r180s2 ssw80r180s2.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFET Gen-SS*80R180S2Rev. 1.1Sep. 2023www.supersemi.com.cnSSB80R180S2/SSW80R180S2800V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advance
ssb80r160s2 ssw80r160s2.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFET Gen-SS*80R160S2Rev. 1.2Dec. 2022www.supersemi.com.cnSSB80R160S2/SSW80R160S2800V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advance
ssf80r500s ssp80r500s ssb80r500s sst80r500s.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFETSS*80R500SRev. 2.1Jun. 2022www.supersemi.com.cnSeptember, 2013SJ-FETSSF80R500S/SSP80R500S/SSB80R500S/SST80R500S800V N-Channel MOSFETDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET 850V @
ssb80r160sfd ssw80r160sfd.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFET Gen- With Fast-RecoverySS*80R160SFDRev. 1.1Apr. 2023www.supersemi.com.cnSSB80R160SFD/SSW80R160SFD800V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-E
ssb80r380s2 ssw80r380s2.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFET Gen-SS*80R380S2Rev. 1.1Mar. 2022www.supersemi.com.cnSSB80R380S2/SSW80R380S2800V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advance
ssb80r380s.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFETSSB80R380SRev. 1.2Jun. 2022www.supersemi.com.cnSeptember, 2013SJ-FETSSB80R380S800V N-Channel MOSFETDescriptionFeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advanced charge balance m
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